Untitled
Abstract: No abstract text available
Text: Ordering number : EN8158C 2SK3666 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, CP Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications
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EN8158C
2SK3666
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2SK3796
Abstract: No abstract text available
Text: Ordering number : EN8636B 2SK3796 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, SMCP Applications • Low-frequency general-purpose amplifier, impedance conversion, analog switches applications Features • Small IGSS • Small Ciss Specifications
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EN8636B
2SK3796
2SK3796
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Untitled
Abstract: No abstract text available
Text: NCP456R, NCP457 2 A Single Load Switch for Low Voltage Rail The NCP456R and NCP457 are power load switch with very low Ron NMOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a best in class current consumption optimization
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NCP456R,
NCP457
NCP456R
NCP457
NCP456/D
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Untitled
Abstract: No abstract text available
Text: NCP456R, NCP457 2 A Single Load Switch for Low Voltage Rail The NCP456R and NCP457 are power load switch with very low Ron NMOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a best in class current consumption optimization
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NCP456R,
NCP457
NCP456R
NCP457
NCP456/D
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Untitled
Abstract: No abstract text available
Text: MBR3045WTG Switch Mode Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for • • • • •
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MBR3045WTG
MBR3045WT/D
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MMBT5401L
Abstract: No abstract text available
Text: MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBT5401L,
SMMBT5401L,
NSVMMBT5401L
MMBT5401LT1/D
MMBT5401L
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NCV7708
Abstract: No abstract text available
Text: NCV7703B Triple Half-Bridge Driver with SPI Control The NCV7703B is a fully protected Triple Half−Bridge Driver designed specifically for automotive and industrial motion control applications. The three half−bridge drivers have independent control. This allows for high side, low side, and H−Bridge control. H−Bridge
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NCV7703B
NCV7703B
NCV7708
NCV7703B/D
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BD788G
Abstract: No abstract text available
Text: BD787G NPN , BD788G (PNP) Complementary Plastic Silicon Power Transistors These devices are designed for lower power audio amplifier and low current, high−speed switching applications. Features http://onsemi.com 4 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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BD787G
BD788Gâ
BD787/D
BD788G
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Untitled
Abstract: No abstract text available
Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE243G
MJE253Gâ
MJE243/D
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Untitled
Abstract: No abstract text available
Text: MJE200G NPN , MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE200Gâ
MJE210Gâ
MJE200/D
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600CW
Abstract: No abstract text available
Text: BTA30H-600CW3G, BTA30H-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • •
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BTA30H-600CW3G,
BTA30H-800CW3G
O-220AB
BTA30Hâ
600CW3/D
600CW
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AT/MJE181G
Abstract: MJE181G
Text: MJE170G, MJE171G, MJE172G PNP , MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • • • • •
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MJE170G,
MJE171G,
MJE172G
MJE180G,
MJE181G,
MJE182G
MJE170/180
MJE180G
AT/MJE181G
MJE181G
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Untitled
Abstract: No abstract text available
Text: MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique • http://onsemi.com Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBT2369L,
MMBT2369AL
MMBT2369LT1/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE243G
MJE253Gâ
MJE243/D
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Untitled
Abstract: No abstract text available
Text: MJE700G, MJE702G, MJE703G PNP , MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors http://onsemi.com These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC
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MJE700G,
MJE702G,
MJE703G
MJE800G,
MJE802G,
MJE803G
MJE700
MJE800
MJE700/D
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PDF
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toroid FT10
Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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BUL45
r14525
BUL45/D
toroid FT10
1N5761
diode 1n400
MTP12N10
MTP8P10
MUR105
MUR150
1N4007
BUL45
MJE210
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Untitled
Abstract: No abstract text available
Text: NCP458R, NCP459 4 A Single Load Switch for Low Voltage Rail The NCP458R and NCP459 are power load switch with very low Ron NMOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a best in class current consumption optimization
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NCP458R,
NCP459
NCP458R
NCP459
NCP458R/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NCP458R, NCP459 4 A Single Load Switch for Low Voltage Rail The NCP458R and NCP459 are power load switch with very low Ron NMOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a best in class current consumption optimization
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NCP458R,
NCP459
NCP458R
NCP459
NCP458R/D
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1N5761
Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Text: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45
O-220AB
21A-09
BUL45/D
1N5761
marking code t1a
BUL45
BUL45G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
MUR150
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1N5761
Abstract: si 1N4007 transistor toroid FT10 1N4007 BUL45 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: ON Semiconductort BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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BUL45
r14525
BUL45/D
1N5761
si 1N4007 transistor
toroid FT10
1N4007
BUL45
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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PDF
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1N5761
Abstract: toroid FT10 BUL45G BUL45 marking code t1a MUR150 MJE210 MPF930 MTP12N10 MTP8P10
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
O-220AB
21A-09
BUL45/D
1N5761
toroid FT10
BUL45G
BUL45
marking code t1a
MUR150
MJE210
MPF930
MTP12N10
MTP8P10
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MC33363AD
Abstract: No abstract text available
Text: MC33363A High Voltage Switching Regulator The MC33363A is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on−chip 700 V / 1.5 A SENSEFET power switch, 500 V active off−line startup FET, duty
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MC33363A
MC33363A
MC33363A/D
MC33363AD
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1N5761
Abstract: npn BUL45G bul45a
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
BUL45/D
1N5761
npn BUL45G
bul45a
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3C95
Abstract: d2s diode series zener SOD-123 1-800-515-8514 1N4148B smd transistor pinout sot23 TL431 SMD AND8119 d2s 51 diode 1N5239B SMD
Text: AND8247/D Application Note for a 6.5 W POE DC to DC Converter Prepared by: Frank Cathell ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION converters at the load end of the cables which transform the 48 V to logic levels such as 5.0 Vdc or 3.3 Vdc or both, to
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AND8247/D
3C95
d2s diode series
zener SOD-123
1-800-515-8514
1N4148B
smd transistor pinout sot23
TL431 SMD
AND8119
d2s 51 diode
1N5239B SMD
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