DIODE B36
Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
10IPK/IO
DIODE B36
part marking b36 diode
Schottky Diode B36
marking B36
B36 Schottky Diode
1B marking
semiconductor b36
b36 surface mount diode
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DIODE B36
Abstract: part marking b36 diode MBRS360T3 semiconductor b36 b36 diode 1B marking marking B36 b36 marking Schottky Diode B36
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
MBRS360T3/D
DIODE B36
part marking b36 diode
MBRS360T3
semiconductor b36
b36 diode
1B marking
marking B36
b36 marking
Schottky Diode B36
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A36 SOT
Abstract: No abstract text available
Text: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers
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OPA336
OPA2336
OPA4336
SBOS068C
A36 SOT
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Untitled
Abstract: No abstract text available
Text: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers
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OPA336
OPA2336
OPA4336
SBOS068C
OPA336
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Untitled
Abstract: No abstract text available
Text: OPA OPA 433 OPA336 OPA2336 OPA4336 6 336 OPA2 336 SBOS068C – JANUARY 1997 – REVISED JANUARY 2005 SINGLE-SUPPLY, microPower CMOS OPERATIONAL AMPLIFIERS microAmplifier Series FEATURES DESCRIPTION ● ● ● ● OPA336 series microPower CMOS operational amplifiers
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OPA336
OPA2336
OPA4336
SBOS068C
OPA336
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Untitled
Abstract: No abstract text available
Text: BZX84B2V4 . BZX84B47 300 mW BZX84B2V4 . BZX84B47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2014-01-03 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 2 1 Power dissipation – Verlustleistung
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BZX84B2V4
BZX84B47
OT-23
O-236)
UL94V-0
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DIODE ON SEMICONDUCTOR B34
Abstract: marking B32 diode SCHOTTKY marking B34 diode SCHOTTKY marking B3X b34 DIODE schottky b34 diodes on semiconductor MARKING B33 SMC 5M MARKING CODE DIODE SMC marking code onsemi Diode B34 marking B32
Text: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS320T3,
MBRS330T3,
MBRS340T3,
MBRS360T3
r14525
MBRS340T3/D
DIODE ON SEMICONDUCTOR B34
marking B32 diode SCHOTTKY
marking B34 diode SCHOTTKY
marking B3X
b34 DIODE schottky
b34 diodes on semiconductor
MARKING B33 SMC
5M MARKING CODE DIODE SMC
marking code onsemi Diode B34
marking B32
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DIODE MOTOROLA B34
Abstract: marking B34 diode SCHOTTKY motorola b36 b34 DIODE schottky CASE 403-03 B34 motorola DIODE B36 diode b34 motorola b34 diode marking b34
Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBRS340T3/D
MBRS340T3
MBRS360T3
DIODE MOTOROLA B34
marking B34 diode SCHOTTKY
motorola b36
b34 DIODE schottky
CASE 403-03
B34 motorola
DIODE B36
diode b34
motorola b34
diode marking b34
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5M MARKING CODE DIODE SMC
Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3,
MBRS360BT3G
5M MARKING CODE DIODE SMC
SMC case 403
SMC 403-03
MBRS360BT3G
Diode marking CODE 5M smb
MBRS360T3
MBRS360T3G
case 403
SMC MARKING
part marking b36 diode
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KZ2 sot23
Abstract: KZ3 SOT23 diode kz9 zener KZE sot23 part marking b36 diode marking kyb zener b39 Marking B15 B18 SOT23 KY6 sot23 marking B33 diode
Text: BZX84B3V0 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • • ±2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 3.0V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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BZX84B3V0
BZX84B39
350mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS36159
KZ2 sot23
KZ3 SOT23
diode kz9 zener
KZE sot23
part marking b36 diode
marking kyb
zener b39
Marking B15 B18 SOT23
KY6 sot23
marking B33 diode
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Zener Diode marking b27
Abstract: zener diode marking code B13 zener B13 zener diode b27
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V
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CMZB12
CMZB53
Zener Diode marking b27
zener diode marking code B13
zener B13
zener diode b27
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MBRS360T3G
Abstract: MBRS360T3 DIODE B36 part marking b36 diode
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
MBRS360T3/D
MBRS360T3G
MBRS360T3
DIODE B36
part marking b36 diode
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KZ3 SOT23
Abstract: No abstract text available
Text: BZX84B2V7 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • 2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 2.7V - 39V Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound.
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BZX84B2V7
BZX84B39
350mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS36159
KZ3 SOT23
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Untitled
Abstract: No abstract text available
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
MBRS360T3/D
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Untitled
Abstract: No abstract text available
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
MBRS360T3/D
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SMD MARKING CODE b24
Abstract: SMD MARKING CODE B15 bzv55c3v3 BZV55-C5V1 SOD80C BZV55A5V1 BZV55C16 PHILIPS smd code dn BZV55 ordering SMD MARKING CODE B36 SOD80c
Text: Philips Semiconductors - PIP - BZV55 series; Voltage regulator diodes Submit Que Philips Semiconductors Home ProductBuy MySemiconductors ContactProduct Information catalogonline BZV55 series; Voltage regulator diodes Information as of 2003-01-21 My.Semiconductors.COM.
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BZV55
SMD MARKING CODE b24
SMD MARKING CODE B15
bzv55c3v3
BZV55-C5V1 SOD80C
BZV55A5V1
BZV55C16 PHILIPS
smd code dn
BZV55 ordering
SMD MARKING CODE B36
SOD80c
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B36 schottky diode
Abstract: No abstract text available
Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3,
MBRS360BT3G
MBRS360T3/D
B36 schottky diode
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Diode marking CODE 5M smb
Abstract: No abstract text available
Text: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3,
MBRS360BT3G
MBRS360T3/D
Diode marking CODE 5M smb
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MBRS360BT3G
Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
Text: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3,
MBRS360BT3G
MBRS360T3/D
MBRS360BT3G
MBRS360T3G
MBRS360T3
B36 schottky diode
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Untitled
Abstract: No abstract text available
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small
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CMZB12
CMZB53
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B20 zener diode
Abstract: zener diode b27 diode zener B16 CMZB51 B20 zener diode glass ZENER B18 zener Diode B22 zener B51 b16 zener Zener Diode marking b27
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V
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CMZB12
CMZB53
B20 zener diode
zener diode b27
diode zener B16
CMZB51
B20 zener diode glass
ZENER B18
zener Diode B22
zener B51
b16 zener
Zener Diode marking b27
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Untitled
Abstract: No abstract text available
Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V
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CMZB12
CMZB53
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5M MARKING CODE DIODE SMC
Abstract: No abstract text available
Text: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G
MBRS360T3/D
5M MARKING CODE DIODE SMC
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DIODE MOTOROLA B34
Abstract: DIODE MOTOROLA B36 motorola b36 motorola b34 motorola package marking diodes b34 diode marking b34 B34 Motorola MOTOROLA B34 diode mbrs340t3 marking b34
Text: MOTOROLA Order this document by MBRS340T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS340T3 MBRS360T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features epitaxial construction with
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OCR Scan
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PDF
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MBRS340T3/D
DIODE MOTOROLA B34
DIODE MOTOROLA B36
motorola b36
motorola b34
motorola package marking diodes b34
diode marking b34
B34 Motorola
MOTOROLA B34 diode
mbrs340t3
marking b34
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