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    PARTMARKING AT 5B Search Results

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    BC807

    Abstract: BC808 BC807 SOT23 5AZ BC807-16 BC807-40 spice 80T23 8C808 BC807-16 BC807-25 BC807-40
    Text: SOT23 PNP SILICON PLANAR MEDIUM I ISSUE 4- JUNE 1996 PARTMARKING BC807 BC807 BC808 POWER TRANSISTORS I DETAILS - 5DZ BC807-16 - 5AZ BC808 5HZ BC808-16 5EZ E c BC807-25 - 5BZ BC808-25 5FZ BC807-40 - 5CZ 8C808-40 5GZ B COMPLEMENTARY TYPES BC807 - BC817 BC808


    Original     		PDF BC807 BC808 BC807-16 BC808-16 BC807-25 BC808-25 BC807-40 8C808-40 BC807 BC808 BC807 SOT23 5AZ BC807-16 BC807-40 spice 80T23 8C808

    bc807

    Abstract: BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BC817 BC818
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 PARTMARKING DETAILS BC807 – 5DZ BC807-16 – 5AZ BC807-25 – 5BZ BC807-40 – 5CZ BC807 BC808 BC808 – 5HZ BC808-16 – 5EZ BC808-25 – 5FZ BC808-40 – 5GZ COMPLEMENTARY TYPES BC807 BC808


    Original     		PDF BC807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 bc807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BC817 BC818

    all ic data

    Abstract: 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF BC807 BC80716 BC80725 BC80740 BC817 -500mA, -50mA* -100mA, all ic data 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725

    Untitled

    Abstract: No abstract text available
    Text: PART OBSOLETE - USE BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 PARTMARKING DETAILS BC807 – 5DZ BC807-16 – 5AZ BC807-25 – 5BZ BC807-40 – 5CZ BC807 BC808 BC808 – 5HZ BC808-16 – 5EZ BC808-25 – 5FZ BC808-40 – 5GZ COMPLEMENTARY TYPES


    Original     		PDF BCW68H BC807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BC807

    5DZ SOT23

    Abstract: BC808 BC80716-5AZ BC807-5DZ
    Text: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 – JUNE 1996 PARTMARKING DETAILS BC807 – 5DZ BC807-16 – 5AZ BC807-25 – 5BZ BC807-40 – 5CZ BC807 BC808 BC808 – 5HZ BC808-16 – 5EZ BC808-25 – 5FZ


    Original     		PDF BC807 BC807-16 BC807-25 BC807-40 BC808 BC808-16 BC808-25 BC808-40 BC807 5DZ SOT23 BC808 BC80716-5AZ BC807-5DZ

    transistor MV sot23

    Abstract: 16 SOT23
    Text: PART OBSOLETE - USE BC807-16 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE


    Original     		PDF BC807-16 BC80716 BC80725 BC80740 BC807 BC817 -500mA, -50mA* BC80716 transistor MV sot23 16 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BCW68H SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF BCW68H BC80716 BC80725 BC80740 BC807 BC817 -500mA, -50mA* BC80716

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use BC807-16 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC807 ISSUE 3 – MARCH 2001 PARTMARKING DETAILS BC80716 – 5AZ BC80725 – 5BZ BC80740 – 5CZ E C B COMPLEMENTARY TYPE BC817 SOT23 ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF BC807-16 BC80716 BC80725 BC80740 BC807 BC817 -500mA, -50mA* BC80716

    FMMD6100

    Abstract: FMMD7000 PARTMARKING at 5b DSA003690
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON CATHODE DIODE PAIR FMMD6100 FMMD6100 ISSUE 2 - OCTOBER 1995 DIM 2 1 3 Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15


    Original     		PDF FMMD6100 NY11725 FMMD6100 FMMD7000 PARTMARKING at 5b DSA003690

    marking code diode a4l

    Abstract: A12L A13L IDT7016 IDT7016L IDT7016S
    Text: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial:12/15/20/25/35ns (max.) Low-power operation


    Original     		PDF 20/25/35ns 12/15/20/25/35ns IDT7016S 750mW IDT7016L IDT7016 IDT7016S/L 200mV marking code diode a4l A12L A13L IDT7016L IDT7016S

    quad port ram

    Abstract: No abstract text available
    Text: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM ◆ Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:12/15/20/25/35ns max. – Industrial: 20ns (max.) – Military: 20/25/35ns (max.)


    Original     		PDF 12/15/20/25/35ns 20/25/35ns IDT7016S 750mW IDT7016L IDT7016S/L IDT7016 200mV quad port ram

    marking code diode a4l

    Abstract: A12L A13L IDT7016 IDT7016L IDT7016S 7016L
    Text: HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial:12/15/20/25/35ns (max.) Low-power operation


    Original     		PDF 20/25/35ns 12/15/20/25/35ns IDT7016S 750mW IDT7016L IDT7016 IDT7016S/L marking code diode a4l A12L A13L IDT7016L IDT7016S 7016L

    part marking ab

    Abstract: No abstract text available
    Text: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial: 12/15/17/20/25/35ns (max.)


    Original     		PDF IDT7015S/L 20/25/35ns 12/15/17/20/25/35ns IDT7015S 750mW IDT7015L IDT7015 b1/99: 200mV part marking ab

    A12L

    Abstract: IDT7015 IDT7015L IDT7015S MIL-PRF38535 NTE 954
    Text: IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM FEATURES: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Military: 20/25/35ns max. – Commercial: 12/15/17/20/25/35ns (max.)


    Original     		PDF IDT7015S/L 20/25/35ns 12/15/17/20/25/35ns IDT7015S 750mW IDT7015L IDT7015 A12L IDT7015L IDT7015S MIL-PRF38535 NTE 954

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L OBSOLETE PARTS Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.)


    Original     		PDF 16/8K IDT70T16/5L 20/25ns 200mW IDT70T16/5 PDN-F-09-01 70T16/5

    5L25

    Abstract: A12L A13L IDT70T15
    Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 16/8K IDT70T16/5L 20/25ns 200mW IDT70T16/5 70T16 70T15 5L25 A12L A13L IDT70T15

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 2.5V 16/8K X 9 DUAL-PORT STATIC RAM IDT70T16/5L Features ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial:20/25ns max. – Industrial: 25ns (max.) Low-power operation


    Original     		PDF 16/8K IDT70T16/5L 20/25ns IDT70T16/5L 200mW IDT70T16/5 100mV) 70T16 70T15

    sanyo OS-CON

    Abstract: B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG
    Text: ZXRD1000 SERIES HIGH EFFICIENCY SIMPLESYNC  PWM DC-DC CONTROLLERS DESCRIPTION ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple


    Original     		PDF ZXRD1000 dr100 sanyo OS-CON B806 IT 236 schaffner dc swinging choke 20SV68M 6SA150M n1 sot23 N2 SOT23-6 IRC 0805 sanyo CG

    Untitled

    Abstract: No abstract text available
    Text: BC807 BC808 SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 4 -JUNE 1996_ PARTMARKING DETAILS BC807 -5 D Z BC807-16-5A2 BC807-25 - 5BZ BC807-40 - 5CZ _ « / BC808 - 5HZ BC808-16-5EZ BC808-25-5FZ BC808-40 - 5GZ 3 E


    OCR Scan     		PDF BC807 BC808 BC807-16-5A2 BC807-25 BC807-40 BC808-16-5EZ BC808-25-5FZ BC808-40

    fmmd7000

    Abstract: FMMD6100
    Text: FMMD6100 DIIV Millimeters Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 0.043 C - 1.10 - D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 L 2.10 N NOM 0.075 0.10 0.0004 0.004 2.50 0.0825 0.0985 NOM 0.95 NOM 0.37


    OCR Scan     		PDF FMMD6100 100mA FMMD7000 FMMD6100

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM PRELIMINARY IDT70V07S/L Integrated Device Technology, Inc. FEATURES: • True D ual-Ported m em ory cells which allow simulta­ neous reads of the sa m e m em ory location • High-speed access — Com m ercial: 25 /3 5 /5 5 n s m ax.


    OCR Scan     		PDF IDT70V07S/L 80-pin 68-pin J68-1) 70V07

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. CMOS DUAL-PORT RAM 32K 4K X 8-BIT WITH SEMAPHORE IDT71342SA IDT71342LA FEATURES: DESCRIPTION: • The IDT71342 is an extrem ely high-speed 4 K x8 D u a l-P o rt Static RAM with full on-chip hardware support of semaphore


    OCR Scan     		PDF IDT71342SA IDT71342LA IDT71342 IDT71342SA/LA 52-pin J52-1) 64-pin PN64-1)

    jsw marking

    Abstract: marking code JSW A12L A15R IDT709389 IDT709389L PN100 017-R
    Text: PRELIMINARY IDT709389L HIGH-SPEED 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM F e a tu re s * True Dual-Ported m em ory cells w hich allow sim ultaneous access o f the sam e m em ory location High-speed clock to data access - * ♦ - Data input, address, a nd control registers


    OCR Scan     		PDF IDT709389L 5/9/12ns IDT709389L PN100-1) 1152K 18-Bit) jsw marking marking code JSW A12L A15R IDT709389 PN100 017-R

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential


    OCR Scan     		PDF IDT70825S/L 16bit 0G17S12 IL-STD-883, 84-pin G84-3) 80-pin PN80-1)