PT008-05
Abstract: PT008
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT008-05 Lead Pb Free Product RoHS compliant PT008-05 mold type Phototransistor PT008-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.6*0.6mm active area mounted
|
Original
|
PT008-05
PT008-05
1000Lx
PT008
|
PDF
|
PT010-05
Abstract: lens photodiode phototransistor
Text: epitex Opto-Device & Custom LED PHOTO-DIODE PT010-05 Lead Pb Free Product RoHS compliant PT010-05 mold type Phototransistor PT010-05 is an epoxy mold type phototransistor featuring high photo current. This phototransistor consists of a chip with 0.8*0.8mm active area mounted
|
Original
|
PT010-05
PT010-05
1000Lx
lens photodiode phototransistor
|
PDF
|
SPP2341
Abstract: MOSFET SPP2341S23RGB 41YW SPP2341S23RG P-Channel MOSFET 12V SOT 23 NO32
Text: SPP2341 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2341 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
SPP2341
SPP2341
-20V/-3
-20V/-2
MOSFET
SPP2341S23RGB
41YW
SPP2341S23RG
P-Channel MOSFET 12V SOT 23
NO32
|
PDF
|
SPN2302
Abstract: MOSFET SPN2302S23RG sot 26 N-Channel MOSFET
Text: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
SPN2302
SPN2302
MOSFET
SPN2302S23RG
sot 26 N-Channel MOSFET
|
PDF
|
SPP3401
Abstract: MOSFET SPP3401S23RG a1yw SPP3401S23RGB
Text: SPP3401 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
SPP3401
SPP3401
-30V/-4
-30V/-3
MOSFET
SPP3401S23RG
a1yw
SPP3401S23RGB
|
PDF
|
SPN09T10T252RG
Abstract: n-channel mosfet transistor low power SPN09T10 static characteristics of mosfet TO-252 N-channel MOSFET 100V 8A N-Channel MOSFET
Text: SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN09T10 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall
|
Original
|
SPN09T10
SPN09T10
00V/8A
O-252
O-251
O-252
SPN09T10T252RG
n-channel mosfet transistor low power
static characteristics of mosfet
TO-252 N-channel MOSFET
100V 8A N-Channel MOSFET
|
PDF
|
SPN1012
Abstract: 20V n-Channel Power MOSFET SC-89 SPN1012S52RG mosfet gate source voltage 20v SPN1012S52RGB
Text: SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
|
Original
|
SPN1012
SPN1012
20V n-Channel Power MOSFET
SC-89
SPN1012S52RG
mosfet gate source voltage 20v
SPN1012S52RGB
|
PDF
|
07 MARKING CODE MOSFET
Abstract: SPN3400 SPN3400S23RG
Text: SPN3400 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
SPN3400
SPN3400
07 MARKING CODE MOSFET
SPN3400S23RG
|
PDF
|
SPN1026
Abstract: SPN1026S56RG Dual N-Channel
Text: SPN1026 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1026 is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while
|
Original
|
SPN1026
SPN1026
320mA
SPN1026S56RG
Dual N-Channel
|
PDF
|
SPN4850
Abstract: No abstract text available
Text: SPN4850 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4850 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
SPN4850
SPN4850
|
PDF
|
SPN1024
Abstract: MARKING 4A sot-563 sot-563 MOSFET D1 power mosfet 5a 20v spn1024s56
Text: SPN1024 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
|
Original
|
SPN1024
SPN1024
MARKING 4A sot-563
sot-563 MOSFET D1
power mosfet 5a 20v
spn1024s56
|
PDF
|
SOP-8P
Abstract: SPP9434
Text: SPP9434 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
|
Original
|
SPP9434
SPP9434
-20V/-7
-20V/-5
SOP-8P
|
PDF
|
SPN6561
Abstract: SOT-23-6L sot 26 Dual N-Channel MOSFET SPN6561S26RG 5V GATE TO SOURCE VOLTAGE MOSFET sot 26 N-Channel MOSFET Z/sot 26 Dual N-Channel MOSFET
Text: SPN6561 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
|
Original
|
SPN6561
SPN6561
SOT-23-6L
sot 26 Dual N-Channel MOSFET
SPN6561S26RG
5V GATE TO SOURCE VOLTAGE MOSFET
sot 26 N-Channel MOSFET
Z/sot 26 Dual N-Channel MOSFET
|
PDF
|
Transistor Mosfet N-Ch 30V
Abstract: N and P MOSFET
Text: SPC4539A N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4539A is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
|
Original
|
SPC4539A
SPC4539A
Transistor Mosfet N-Ch 30V
N and P MOSFET
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1
|
Original
|
LS301
LS302
LS303
100MHz
250mW
500mW
LS301ithic
|
PDF
|
J201 Replacement
Abstract: JFET 401 Dual PNP Transistor depletion 60V power mosfet 3N165 "pin compatible"
Text: IT130A IT130 IT131 IT132 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector Current
|
Original
|
IT130A
IT130
IT131
IT132
250mW
500mW
J201 Replacement
JFET 401
Dual PNP Transistor
depletion 60V power mosfet
3N165 "pin compatible"
|
PDF
|
sot 26 Dual N-Channel MOSFET
Abstract: 10mA JFET LS358
Text: LS358 LOG CONFORMANCE MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES ∆re ≤1Ω from ideal TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC C2 E1 5 B1 BOTH SIDES 500mW 4.3mW/°C
|
Original
|
LS358
250mW
500mW
sot 26 Dual N-Channel MOSFET
10mA JFET
|
PDF
|
jfet differential transistor
Abstract: JFET 401 U402 N CHANNEL FET
Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature
|
Original
|
LS318
250mW
500mW
LS318
jfet differential transistor
JFET 401
U402 N CHANNEL FET
|
PDF
|
J201 Replacement
Abstract: 2N5019 "direct replacement"
Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation
|
Original
|
IT124
IT124
250mW
500mW
J201 Replacement
2N5019 "direct replacement"
|
PDF
|
Current Regulator Diode
Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
|
Original
|
LS350
LS351
LS352
275MHz
250mW
500mW
LS352
Current Regulator Diode
J110 spice
J502
"Dual npn Transistor"
"Dual PNP Transistor"
VCR11N
J201 spice
Dual PNP Transistor
U402 N CHANNEL FET
jfet differential transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
|
Original
|
LS310
LS311
LS312
LS313
250MHz
250mW
500mW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current
|
Original
|
IT120A
IT120
IT121
IT122
250mW
500mW
|
PDF
|
NEC C51A
Abstract: nec inverter schematic F074 marking B007 marking B003 JH-04 UPB6101C
Text: N É C ELECTRONICS INC 7H c D e | LiMH752S DD0Û110 1 NEC NEC Electronics Inc. T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced
|
OCR Scan
|
iMH752S
uPB6100
uPB6101
uPB6102
uPB6103
b457S55
/PB610
//PB6100
AIPB6101
AiPB6102
NEC C51A
nec inverter schematic
F074
marking B007
marking B003
JH-04
UPB6101C
|
PDF
|
uPB6101C
Abstract: NEC C51A N021C F010 nec inverter schematic nec lot code format T-42-11-05
Text: N É C ELECTRONICS INC 7H D e | LiMH752S DD0Û110 1 NEC N E C Electronics Inc. c T-.42-11-05 //PB 6100 TTL-2 SERIES BIPOLAR TTL GATE ARRAYS March 1985 Revision 1 Description The //PB6100 series features three high-speed, lowpower, TTL-compatible gate arrays using advanced
|
OCR Scan
|
iMH752S
uPB6100
uPB6101
uPB6102
uPB6103
b457S55
/PB610
//PB6100
AIPB6101
AiPB6102
uPB6101C
NEC C51A
N021C
F010
nec inverter schematic
nec lot code format
T-42-11-05
|
PDF
|
