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    Nexperia PBSS2540MB,315

    TRANS NPN 40V 0.5A DFN1006B-3
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    DigiKey PBSS2540MB,315 Cut Tape 9,529 1
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    PBSS2540MB,315 Digi-Reel 9,529 1
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    PBSS2540MB,315 Reel 10,000
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    Mouser Electronics PBSS2540MB,315 6,306
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    Newark PBSS2540MB,315 Cut Tape 5
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    TTI PBSS2540MB,315 Reel 30,000
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    Avnet Silica PBSS2540MB,315 10,000 8 Weeks 10,000
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    Nexperia PBSS2540MB315

    Trans GP BJT NPN 40V 0.5A 3-Pin DFN T/R - Tape and Reel (Alt: PBSS2540MB,315)
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    Avnet Americas PBSS2540MB315 Reel 6 Weeks 30,000
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    NXP Semiconductors PBSS2540MB,315

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    NexGen Digital PBSS2540MB,315 12,560
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    PBSS2540MB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PBSS2540MB NXP Semiconductors 40 V, 0.5 A NPN low VCEsat (BISS) transistor Original PDF
    PBSS2540MB,315 NXP Semiconductors PBSS2540MB - 40 V, 0.5 A NPN low VCEsat (BISS) transistor, SOT883B Package, Standard Marking, Reel Pack, SMD, Pitch 2mm Original PDF

    PBSS2540MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    TL431 SOT323

    Abstract: No abstract text available
    Text: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,


    Original     		PDF AN11045 TL431 SOT323

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3540MB OT883B PBSS2540MB. AEC-Q101

    MLE20

    Abstract: biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC
    Text: 83B PBSS3540MB SO T8 40 V, 0.5 A PNP low VCEsat BISS transistor Rev. 1 — 7 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS3540MB OT883B PBSS2540MB. AEC-Q101 MLE20 biss 0001 TRANSISTOR SMD MARKING CODE 04 MARKING CODE SMD IC