PDS-20-600
Abstract: No abstract text available
Text: PDS-20-600 0 POWER DIVIDERS / COMBINERS 50 to 1000 MHz / 2-Way / Low Insertion Loss / Excellent Phase & Ampli. Bal./ Broadband / PC Hdr PRINCIPAL SPECIFICATIONS Model Number PDS-20-600 Frequency Freq., Range, Perform., MHz MHz 50 - 1000 50 - 150 150 - 1000
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PDS-20-600
PDS-20-600
22Feb96
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AZ991
Abstract: E44211
Text: AZ991 MINIATURE PC BOARD RELAY FEATURES • • • • • • • • Contacts rated at 3, 5 or 10 Amps Meets FCC Part 68.302 1500 lightning surge Meets FCC Part 68.304 1000 V dielectric 0.240" 6.1 mm min. between coil and contact Low cost DC coils to 48 VDC
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AZ991
E44211
AZ991
3/20/01W
E44211
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AZ991
Abstract: E44211
Text: AZ991 MINIATURE PC BOARD RELAY FEATURES • • • • • • • • Contacts rated at 3, 5 or 10 Amps Meets FCC Part 68.302 1500 lightning surge Meets FCC Part 68.304 1000 V dielectric 0.240" 6.1 mm min. between coil and contact Low cost DC coils to 48 VDC
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AZ991
E44211
AZ991
12/15/03W
E44211
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1SV70
Abstract: TBB1004 TBB1004DMTL-E
Text: TBB1004 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0842-1000 Previous ADE-208-988H Rev.10.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.
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TBB1004
REJ03G0842-1000
ADE-208-988H)
200pF,
PTSP0006JA-A
TBB1004
1SV70
TBB1004DMTL-E
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2SD2016
Abstract: FM20
Text: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)
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2SD2016
10max
200min
90typ
40typ
O220F
150x150x2
50x50x2
2SD2016
FM20
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2SD2016
Abstract: FM20
Text: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)
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2SD2016
10max
200min
90typ
40typ
O220F)
150x150x2
50x50x2
2SD2016
FM20
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6LPlastic-Encapsulate Transistors CJ2045 SOT-23-6L Dual 40V complementary transistors FEATURES z 40V complementary device z High hFE z Mounting cost and area can be cut in half MARKING: 2045 EQUIVALENT CIRCUIT
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OT-23-6LPlastic-Encapsulate
CJ2045
OT-23-6L
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT491 TRANSISTOR NPN FEATURES 1. BASE Low equivalent on-resistance 2. EMITTER 3. COLLECTOR Marking :491 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol
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OT-23
OT-23
FMMT491
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marking 210
Abstract: FP210 2SB1123
Text: FP210 Ordering number : EN4537A FP210 PNP Epitaxial Planar Silicon Transistor Driver Applications Features • • Composite type with 2 transistors PNP contained in one package, facilitating high-density mounting. The FP210 is formed with 2 chips being equivalent to the 2SB1123, placed in one package.
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FP210
EN4537A
FP210
2SB1123,
250mm2
marking 210
2SB1123
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IC 4538
Abstract: ITR1100 4538 ic ic 4538 datasheet 2SD1623 FP211 ITR10990 ITR10991 EN4538
Text: FP211 Ordering number : EN4538A FP211 NPN Epitaxial Planar Silicon Transistor Driver Applications Features • • Composite type with 2 transistors NPN contained in one package, facilitating high-density mounting. The FP211 is formed with 2 chips being equivalent to the 2SD1623, placed in one package.
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FP211
EN4538A
FP211
2SD1623,
250mm2
IC 4538
ITR1100
4538 ic
ic 4538 datasheet
2SD1623
ITR10990
ITR10991
EN4538
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Untitled
Abstract: No abstract text available
Text: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • • • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. Industrial Use Complement to TIP140T/141T/142T Equivalent Circuit
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TIP145T/146T/147T
TIP140T/141T/142T
O-220
TIP145T
TIP146T
TIP147T
TIP145T/146T/147T
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SAP10N
Abstract: SAP10P
Text: Equivalent circuit SAP10N B D Application: Audio V 12 A IC IB 1 PC 10 mA Di IF 150 °C –40 to +150 °C Tj Tstg A W IEBO VEB =5V VCEO IC = 30mA 150 hFE ✽ VCE = 4V, IC =7A 5000 VCE sat IC =7A, IB =7mA VBE (sat) 100 µA 100 µA 2.0 V 2.5 1200 mV IF =2.5mA
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SAP10N
SAP10P)
SAP10N
SAP10P
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SAP09N
Abstract: SAP09P equivalent SAP09P ic 41 b
Text: Equivalent circuit SAP09P B C Application: Audio IC –10 A IB –1 A PC 80 Tc=25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg typ Unit max –100 µA –100 µA IEBO VEB = – 5V VCEO IC = – 30mA –150 hFE ✽ VCE = – 4V, IC = – 6A 5000 VCE (sat)
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SAP09P
SAP09N)
SAP09N
SAP09P equivalent
SAP09P
ic 41 b
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SAP16N
Abstract: SAP16P SAP16N equivalent SAP16 sap16n circuit
Text: Equivalent circuit SAP16N D E V 5 V IC 15 A IB 1 A 150 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC = 30mA 160 hFE ✽ VCE = 4V, IC = 10A 5000 VCE (sat) IC = 10A, IB = 10mA 2.0 V VBE (sat) IC = 10A, IB = 10mA
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SAP16N
SAP16P)
SAP16N
SAP16P
SAP16N equivalent
SAP16
sap16n circuit
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SAP10N
Abstract: SAP10P
Text: Equivalent circuit SAP10P S B C Application: Audio –150 V –5 V IC –12 A IB –1 A 100 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Tj Tstg VCB =–150V min typ Unit max –100 µA –100 µA IEBO VEB = –5V VCEO IC =–30mA –150 hFE ✽ VCE =–4V, IC = –7A
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SAP10P
SAP10N)
SAP10N
SAP10P
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3202 a ic
Abstract: SAP09N SAP09P
Text: Equivalent circuit SAP09N B D Application: Audio V IC 10 A IB 1 A PC 80 Tc = 25°C W 10 mA 150 °C –40 to +150 °C Di IF Tj Tstg typ Unit max 100 µA 100 µA IEBO VEB = 5V VCEO IC =30mA 150 hFE ✽ VCE =4V, IC =6A 5000 VCE (sat) IC =6A, IB =6mA 2.0 V
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SAP09N
SAP09P)
3202 a ic
SAP09N
SAP09P
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SAP16
Abstract: SAP16N SAP16P SAP16N equivalent SAP16*p sap16n circuit
Text: Equivalent circuit C Application: Audio –160 V –5 V IC –15 A IB –1 A 150 Tc=25°C W 10 mA IEBO VEB = – 5V VCEO IC = – 30mA –160 hFE ✽ VCE = – 4V, IC=–10A 5000 typ max Unit –100 µA –100 µA (36°) V 20000 VCE (sat) IC = – 10A, IB =–10mA
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SAP16N)
SAP16P
SAP16
SAP16N
SAP16P
SAP16N equivalent
SAP16*p
sap16n circuit
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2SA2018
Abstract: DTC144EE 2SA20 EMF5
Text: EMF5 Transistors Power management dual transistors EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor !Equivalent circuits (3) (2) DTr2 ROHM : EMT6 (5) (2) 0.5 0.5 1.0 1.6 (3) (4) (1) 1.2
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2SA2018
DTC144EE
2SA20
EMF5
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Untitled
Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use Equivalent Circuit
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TIP112
O-220
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Untitled
Abstract: No abstract text available
Text: PDS-20-600_0 POWER DIVIDERS / COMBINERS 50 to 1000 MHz / 2-Way / Low Insertion Loss / Excellent Phase & Ampli. B aU Broadband / PC Hdr PRINCIPAL SPECIFICATIONS Model Number PDS-20-600 Frequency Freq., Range, Perform., MHz MHz 5 0 - 1000 5 0 - 150 1 5 0 - 1000
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PDS-20-600_
PDS-20-600
MIL-P-23971
MERRIMAC/41
201-575-1300/F
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B212 diode
Abstract: 1DI2OOE-O55 T151 of IC 4511
Text: 1DI2OOE-O55 200a • Outline Drawings / < 7 -h POWER TRANSISTOR MODULE - Sio. WO • SW Œ Kl*3i& • mmm T* ivpt 600 V VcEO 600 V Pc 1000 W Pc - W 9 Mounting 3.5 N-m Terminals 4.5 N *m ju !: 1 V 6 V 200 A A 400 ' 200 Ti M207 E82988(M) Units Vceo
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1DI2OOE-O55
E82988
i17Vt
l95t/R89
B212 diode
T151
of IC 4511
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100K preset potentiometer
Abstract: 1M preset potentiometer 10K preset potentiometer 100K potentiometer 1K preset potentiometer 100K preset potentiometer balance 10K preset potentiometer DESCRIPTION PRESET 100K 100k Linear Potentiometer 1M preset
Text: Standard Packaged Circuits Type D e scriptio n and S pe cificatio n PC 1006/1 A n ingenious m u ltim e te r sensitiser designed fo r con ne ction to the !50uA d.c. range o f a m u ltim e te r to give extra SEN SITISER ranges o f 1, 10 and 1 0 0 u A ; 10, 100 and 1000 m V f.s.d.
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PC1006/1
100uA;
1000mV
1uA/10mV)
600uA
10k/1uA,
1k/10uA,
ohms/100uA;
100K preset potentiometer
1M preset potentiometer
10K preset potentiometer
100K potentiometer
1K preset potentiometer
100K preset potentiometer balance
10K preset potentiometer DESCRIPTION
PRESET 100K
100k Linear Potentiometer
1M preset
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2SC2712 equivalent
Abstract: Equivalent 2SC3074 2SC2873 equivalent Transistor 78 L 05 2SC2712
Text: 7. Maximum Ratings & Electrical Characteristics 7. Maximum Ratings & Electrical Characteristics 7.1 Maximum Ratings Maximum ratings are equal to those of conventional packages or equivalent with the exception of power dissipation and safe operating area. L ead Type
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O-92/M
O-92MOD
O-92M
O-220
2SC3074
2SA1244.
2SC2712 equivalent
Equivalent 2SC3074
2SC2873 equivalent
Transistor 78 L 05
2SC2712
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WB2010-1SM
Abstract: wb1010pc
Text: 56 WideBandRFTransformers Coilcraft wide band transformers provide reliable per formance at a price considerably lower than currently available equivalents. The transformers are offered in tapped or untapped con figurations and are packaged in a low-profile DIP-style
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WB1010-1,
WB2010-1,
WB3010-1
WB1015,
WB3015
WB1040,
WB2040,
WB3040
WB2010-1SM
wb1010pc
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