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Catalog Datasheet	MFG & Type	PDF	Document Tags
512m pc133 SDRAM DIMM Abstract: nec 2405 PC133 registered reference design Text: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed	Original	PDF	HB52F649E1-75B 64-Mword 72-bit, PC133SDRAM E0021H20 HB52F649E1 256-Mbit HM5225405BTT) 512m pc133 SDRAM DIMM nec 2405 PC133 registered reference design
PC133 registered reference design Abstract: No abstract text available Text: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H10 (1st edition) (Previous ADE-203-1080A (Z) Preliminary Jan. 31, 2001 Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed	Original	PDF	HB52F649E1-75B 64-Mword 72-bit, PC133SDRAM E0021H10 ADE-203-1080A HB52F649E1 256-Mbit HM5225405BTT) PC133 registered reference design
HB52F649E1-75B Abstract: HB52F649E1 HM5225405BTT pec 730 Hitachi DSA00245 Nippon capacitors Text: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM ADE-203-1080 (Z) Preliminary Rev. 0.0 Jun. 28, 1999 Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed	Original	PDF	HB52F649E1-75B 64-Mword 72-bit, PC133SDRAM ADE-203-1080 HB52F649E1 256-Mbit HM5225405BTT) HB52F649E1-75B HM5225405BTT pec 730 Hitachi DSA00245 Nippon capacitors
Untitled Abstract: No abstract text available Text: REV. H 64, 128, 256 MEG: x4, x8, x16 SDRAM CAPACITANCE PARAMETER SYMBOL MIN MAX UNITS NOTES Input Capacitance: CLK CI1 2.5 3.5 pF 1 Input Capacitance: All other input-only pins CI2 2.5 3.8 pF 2 Input/Output Capacitance: DQs CIO 4.0 6.0 pF 3 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS	Original	PDF	PC100 PC133SDRAM
PC133-SDRAM Abstract: No abstract text available Text: T O S H IB A THMY7232G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.	OCR Scan	PDF	THMY7232G1EG-75 432-WORD 72-BIT THMY7232G1EG TC59SM708FT 72-bit 168-pin PC133-SDRAM