Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µ PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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PDF
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PD4264400,
32-pin
PD4264400-A50
PD4265400-A60
PD4264400-A70
PD4265400-A70
PD4265400-A80
P32LE-400A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The µPD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.
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Original
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PDF
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PD4264400,
32-pin
PD4264400-A50
PD4265400-A50
PD4264400-A60
PD4265400-A60
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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4265405
Abstract: 42S65405
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The µPD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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Original
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PDF
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PD4264405,
42S65405,
PD42S65405
32-pin
PD42S65405-A60,
4265405-A60
4265405
42S65405
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83TL-7E07A
Abstract: 42644LA-80L
Text: SEC PD42644 1,048,576 X 4-Bit Silicon File NEC Electronics Inc. Description Pin Configurations The £/PD42644 is a fast-page, low-power dynamic RAM organized as 1,048,576 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced
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uPD42644
/PD42644
pPD42644
JHPD42644
ffPD42644
1SL-18
fPD42644
fiPD42644
83TL-7E07A
42644LA-80L
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D4264400
Abstract: D42644
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / _ jiP D 4 2 6 4 4 0 0 , 4 2 6 5 4 0 0 6 4 M -B IT D YN AM IC RAM 16 M-W ORD B Y 4-BIT, F A S T P A G E M OD E D e s c r ip tio n The / i PD4264400, 4265400 are 16,777,216 words by 4 bits CMOS dynamic RAMs. The fast page mode capability
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OCR Scan
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uPD4264400
uPD4265400
32-pin
iPD4264400-A50
265400-A
MPD4264400.
MPD4264400G5-7JD,
4265400G5-7JD:
D4264400
D42644
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NEC uPD
Abstract: 4264405 D42S65405
Text: DATA SHEET NEC / _/ MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿/PD4264405, 42S65405, 4265405 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs w ith optional EDO. EDO is a kind of the page m ode and is useful fo r the read operation.
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OCR Scan
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uPD4264405
uPD42S65405
uPD4265405
/PD4264405,
42S65405,
42S65405
32-pin
JPD4264405-A50
PD42S65405-A50,
NEC uPD
4264405
D42S65405
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / //PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n T h e /¿ P D 4 2 6 4 4 0 0 ,4 2 6 5 4 0 0 a re 1 6 ,7 7 7 ,2 1 6 w o rd s b y 4 b its d y n a m ic C M O S R A M s. T h e fa s t p a g e m o d e c a p a b ility
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uPD4264400
uPD4265400
jjPD4264400-A50
MPD4264400,
P32LE-400A
040-o
16tooo5
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0829A
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿ PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ^P D 4 2 6 4 4 0 0 ,4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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PD4264400,
32-pin
D4264400-A50
D4264400-A70
D4265400-A70
D4265400-A80
P32LE-400A
0829A
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UPD4264405
Abstract: No abstract text available
Text: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The >PD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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OCR Scan
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uPD4264405
uPD4265405
iPD4264405
/iPD4264405,
32-pin
fiPD4264405-A50,
4265405-A50
HPD4264405-A60,
4265405-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM
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MC-4216LFF72
16M-WORD
72-BIT
MC-4216LFF72
uPD4264405
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-W ORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM
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MC-4216LFH641
16M-W
64-BIT
MC-4216LFH641
uPD4264405
C-4216LFH641-A50
C-4216LFH641-A60
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFH641 3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFH641 is a 16,777,216 words by 64 bits dynam ic RAM module on which 16 pieces of 64M DRAM :
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MC-4216LFH641
16M-WORD
64-BIT
MC-4216LFH641
uPD4264405
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d42s65405g5
Abstract: NEC D42S65405 D42S65405G5-A50-7J D42S65405 42S65405 42S844Q5G5-A60 IC MARKING A60 MPD42S64405
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUII _ //¿PD42S64405,4264405,42S65405,4265405 64M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The /¿PD42S64405, 4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO >s a kind of the page mode and is useful for the read operation.
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uPD42S64405
uPD4264405
uPD42S65405
uPD4265405
64M-BIT
PD42S64405,
42S65405,
/iPD42S64405,
42S65405
32-pin
d42s65405g5
NEC D42S65405
D42S65405G5-A50-7J
D42S65405
42S844Q5G5-A60
IC MARKING A60
MPD42S64405
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¿PD4264405, 4 2 S 6 5 4 0 5 ,4265405 are 16,777,216 words by 4 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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uPD4264405
uPD42S65405
uPD4265405
PD4264405,
PD42S65405
32-pin
PD4264405-A50
PD42S65405-A50,
4265405-A50
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFF721 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFF721 is a 16,777,216 words by 72 bits dynam ic RAM module on which 18 pieces of 64M DRAM :
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PDF
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MC-4216LFF721
16M-WORD
72-BIT
MC-4216LFF721
uPD4264405
M168S-50A39-1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /PD4264400, 4265400 64 M BIT DYNAMIC RAM 16M-WORD BY 4-BIT, FAST PAGE MODE D e s c rip tio n The /PD4264400, 4265400 are 16,777,216 words by 4 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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OCR Scan
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PDF
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/xPD4264400,
16M-WORD
/iPD4264400,
32-pin
264400-A
265400-A
/1PD4265400265400
P32LE-400A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The ¿¡PD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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PD4264405,
42S65405,
PD42S65405
32-pin
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Untitled
Abstract: No abstract text available
Text: PRELIM INARY DATA SHEET M OS INTEG RATED CIRCUIT NEC PD4264405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, HYPER PAGE MODE Description The /PD4264405,4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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OCR Scan
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PDF
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uPD4264405
uPD4265405
/JPD4264405
1PD4264405,
32-pin
PD4264405-A50,
4265405-A50
PD4264405-A60,
4265405-A60
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PP4264400, 4 2 6 5 4 0 0 64 M BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE D escription The /¿PD4264400, 4265400 are 16,777,216 words by 4 bits dynam ic CMOS RAMs. The fast page mode capability realize high speed access and low power consum ption.
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OCR Scan
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PP4264400,
uPD4264400
uPD4265400
32-pin
/JPD4264400-A50
PD4265400-A50
/JPD4264400-A60
PD4265400-A60
PD4264400-A70
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4264400, 4265400 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD4264400,4265400 are 16,777,216 w ords by 4 bits C M OS dynam ic RAMs. The fast page mode capability realize high speed access and low pow er consum ption.
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OCR Scan
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PDF
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uPD4264400
uPD4265400
PD4264400
32-pin
PD4264400-A50
uPD4265400-A50
uPD4264400-A60
uPD4265400-A60
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4216LFF721 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE UNBUFFERED TYPE, EDO Description The MC-4216LFF721 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM :
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OCR Scan
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PDF
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MC-4216LFF721
16M-WORD
72-BIT
MC-4216LFF721
uPD4264405
MC-4216LFF721-A50
MC-4216LFF721-A60
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Untitled
Abstract: No abstract text available
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-4216LFF72 3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, EDO Description The MC-4216LFF72 is a 16,777,216 words by 72 bits dynam ic RAM module on which 18 pieces of 64M DRAM :
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OCR Scan
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PDF
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MC-4216LFF72
16M-WORD
72-BIT
MC-4216LFF72
uPD4264405
M168S-50A15-1
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Untitled
Abstract: No abstract text available
Text: • •’er c m PD4264400, 4265400 16,777,216 X 4-Bit Dynamic CMOS RAM NEC NEC Electronics Inc. Preliminary S eptem ber 1993 Description RAS-only refreshing and 4096 address com binations of Ao - A ^ to perform CAS before RAS and hidden refresh ing of the mem ory during a 64-ms period. The
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JUPD4264400,
64-ms
yjPD4265400
/L/PD4264400
j/PD4265400
vPD4264400
/L/PD4265400
34-pin
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