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Catalog Datasheet	MFG & Type	Document Tags	PDF
IR2132 APPLICATION NOTE Abstract: ir2130 sample 43B zener IR2130 APPLICATION NOTE Text: Data Sheet No. PD650009 IR2130C/IR2132C 3-PHASE BRIDGE DRIVER DIE IN WAFER FORM Features • Floating channel designed for bootstrap operation • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V	Original	PD650009 IR2130C/IR2132C IR2130/IR2132 IR2132 APPLICATION NOTE ir2130 sample 43B zener IR2130 APPLICATION NOTE	PDF
IR21365C Abstract: IR21363C 5.2V Zener Diode IR21363 IR21365 IR2136 application note ir2136 Design Tip Text: Data Sheet No. PD65000 IR2136C/IR21362C/IR21363C/IR21365C/ IR21366C/IR21367C/IR21368C 3-PHASE BRIDGE DRIVER DIE IN WAFER FORM Features • 100 % Tested at Probec • Available in Chip Pack, Unsawn Wafer, Sawn on Film d • Floating channel designed for bootstrap operation	Original	PD65000 IR2136C/IR21362C/IR21363C/IR21365C/ IR21366C/IR21367C/IR21368C IR2136C/IR21368C) IR21362C) IR21363C/IR21365C/IR21366C/IR21367C) IR21365C IR21363C 5.2V Zener Diode IR21363 IR21365 IR2136 application note ir2136 Design Tip	PDF
pin diagram of full adder using Multiplexer IC Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642 Text: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿PD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon	OCR Scan	b4E75B5 T-42-11 uPD65000 NECEL-000246-0185 pin diagram of full adder using Multiplexer IC tr f422 fj01 F713 f422 F715 PD65080 F-661 F-642	PDF
F422 Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744 Text: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ \| T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input	OCR Scan	b427525 uPD65000 The//PD65000 T-42-11-09 //PD65000 //PD65003 juPD65002 fiPD65010 juPD65020 F422 transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744	PDF
PD65000 Abstract: 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4 Text: SEC CMOS-5 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIM INARY Description The CM O S-5 gate arrays are low -pow er, high-speed integrated circu its fea tu ring 1.2-m icron silicon -ga te CMOS technology. The basic cell on the gate array chip consists o f six transistors, three p-channel and	OCR Scan	PD65000 000to NECEL-000837 8748 NEC CMOS-5 NEC nec 8748 94Q3 NEC CMOS-4	PDF
f422 Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003 Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/PD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip	OCR Scan	uPD65000 //PD65003 juPD65002 fiPD65010 juPD65020 16-Pin 18-Pin 20-Pin 24-Pin 28-Pin f422 transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003	PDF