MBN600GR12A
Abstract: Hitachi DSA0047
Text: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
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PDE-N600GR12A-0
MBN600GR12A
00A/1200V,
Weight570g
MBN600GR12A
Hitachi DSA0047
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MBM100GR12A
Abstract: Hitachi DSA0047
Text: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M100GR12A-0
MBM100GR12A
00A/1200V,
Weight230g
MBM100GR12A
Hitachi DSA0047
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hitachi igbt
Abstract: IGBT 1200A MBN1200GR12A Hitachi DSA0047
Text: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
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PDE-N1200GR12A-0
MBN1200GR12A
200A/1200V,
Weight1300g
hitachi igbt
IGBT 1200A
MBN1200GR12A
Hitachi DSA0047
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MBN400GR12A
Abstract: Hitachi DSA0047
Text: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
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PDE-N400GR12A-0
MBN400GR12A
00A/1200V,
Weight480g
MBN400GR12A
Hitachi DSA0047
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PDE-N600GR12A-0
Abstract: MBN600GR12A MBN600GR12
Text: PDE-N600GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN600GR12A [Rated 600A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
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PDE-N600GR12A-0
MBN600GR12A
00A/1200V,
Weight570g
PDE-N600GR12A-0
MBN600GR12A
MBN600GR12
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MBM150GR12A
Abstract: Hitachi DSA0047
Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M150GR12A-0
MBM150GR12A
50A/1200V,
Weight230g
MBM150GR12A
Hitachi DSA0047
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fast recovery diode 600v 1200A
Abstract: diode current 1200A MBN1200GR12A IGBT 1200A PDE-N1200GR12A-0 IGBT 1200A 600V
Text: PDE-N1200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN1200GR12A [Rated 1200A/1200V, Single-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
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PDE-N1200GR12A-0
MBN1200GR12A
200A/1200V,
Weight1300g
fast recovery diode 600v 1200A
diode current 1200A
MBN1200GR12A
IGBT 1200A
PDE-N1200GR12A-0
IGBT 1200A 600V
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ETON
Abstract: MBN400GR12A PC2500
Text: PDE-N400GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBN400GR12A [Rated 400A/1200V, Single-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode.
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PDE-N400GR12A-0
MBN400GR12A
00A/1200V,
Weight480g
ETON
MBN400GR12A
PC2500
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MBM200GR12A
Abstract: Hitachi DSA0047
Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M200GR12A-0
MBM200GR12A
00A/1200V,
Weight230g
MBM200GR12A
Hitachi DSA0047
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mbm150gr12
Abstract: MBM150GR12A MBM150
Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M150GR12A-0
MBM150GR12A
50A/1200V,
Weight230g
mbm150gr12
MBM150GR12A
MBM150
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MBM200GR12A
Abstract: No abstract text available
Text: PDE-M200GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM200GR12A [Rated 200A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M200GR12A-0
MBM200GR12A
00A/1200V,
Weight230g
MBM200GR12A
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MBM100GR12
Abstract: MBM100GR12A
Text: PDE-M100GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12A [Rated 100A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD
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PDE-M100GR12A-0
MBM100GR12A
00A/1200V,
Weight230g
MBM100GR12
MBM100GR12A
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MBM300GR12A
Abstract: No abstract text available
Text: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8
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PDE-M300GR12A-0
MBM300GR12A
00A/1200V,
Weight460g
MBM300GR12A
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MBM300GR12A
Abstract: Hitachi DSA0047
Text: PDE-M300GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT MBM300GR12A [Rated 300A/1200V, Dual-pack type] OUTLINE DRAWING Unit in mm 110 93 25 E2 C1 80 62 C2E1 4-Fast-on Terminal #110 25 E2 G2 4- φ 6.5 CIRCUIT DIAGRAM G2 E2 E2 3-M6 C1 18 18 18 46.5 φ 0.8
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PDE-M300GR12A-0
MBM300GR12A
00A/1200V,
Weight460g
MBM300GR12A
Hitachi DSA0047
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vt244a
Abstract: No abstract text available
Text: 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • 8 388 608 words by 72-bit ECC - mode, one bank organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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72-Bit
72V8000GS-50/-60
72V8010GS-50/-60
72V8000/10GS-50
72V8000/10GS-60
DQ0-DQ71)
HYM72V8000/10GS-50/-60
L-DIM-168-4
vt244a
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PQ62
Abstract: DQ73
Text: 168 Pin DIMM Characteristics. 168 Pin Buffered DIMM Characteristics Basic Architecture ECC Data Bit Assignments DRAM CHIPS Intended primarily for use in 8-byte systems, although use in 4-byte systems is supported via onboard interleave, the basic structure of 168 pin
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Parity/x72
PQ62
DQ73
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74ABT244
Abstract: No abstract text available
Text: 1M x 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information • 1 048 576 words by 72-bit ECC - mode organization • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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72-Bit
721000GS-60/-70
721010GS-60/-70
HYM721000/10GS-60/-70
L-DIM-168-2
GLD05861
74ABT244
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q207
Abstract: VT244A DM1687
Text: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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72-Bit
72V1600GS-50/-60
72V1610GS-50/-60
16Mx72
DM168-7
HYM72V1600/10GS-50/-60
72-ECC
L-DIM-168-7
q207
VT244A
DM1687
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Untitled
Abstract: No abstract text available
Text: 4M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V4005GS-50/-60 HYM 72V4015GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 4M x 72 organisation • Optimized for ECC applications
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72-Bit
72V4005GS-50/-60
72V4015GS-50/-60
HYM72V4005/15GS-50/-60
72-ECC
L-DIM-168-5
4Mx72
DM168-5
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Untitled
Abstract: No abstract text available
Text: 16M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation • Optimized for ECC applications • Fast Page Mode Operation
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72-Bit
72V1620GS-50/-60
72V1630GS-50/-60
HYM72V1620/30GS-50/-60
72-ECC
L-DIM-168-9
16Mx72
DM168-9
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bj 94 131- 6
Abstract: LV244A
Text: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 • 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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72-Bit
72V4000GS-50/-60
72V4010GS-50/-60
HYM72V4000/10GS-50/-60
72-ECC
L-DIM-168-5
4Mx72
DM168-5
bj 94 131- 6
LV244A
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EH18
Abstract: No abstract text available
Text: DRAM MODULE KMM372C120CJ/CT KMM372C120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372C 120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC tCAC 18ns
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KMM372C120CJ/CT
1Mx72
KMM372C120CJ/CT
48pin
168-pin
KMM372C120C
110ns
130ns
KMM37
EH18
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM64400 Product Preview 4M x 64 Bit Dynamic Random Access Memory Module The MCM64400 is a dynamic random access memory DRAM module organized as 4,194,304 x 64 bits. The module is a JED EC -standard 168-lead d u a l-in -lin e memory module (DIMM) with 84 separate contacts per side, consist
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MCM64400
MCM64400
168-lead
400-m
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M x 72-Bit Dynamic RAM EDO Module ECC - Module HYM 72V2005GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 2 M x 72 organisation • Optimized for ECC applications
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PDF
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72-Bit
72V2005GS-50/-60
HYM72
V2005GS-50/-60
L-DIM-168-22
DM168-22
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