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    PDMB300B12 Search Results

    PDMB300B12 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDMB300B12 Nihon Inter Electronics IGBT MODULE Dual 300A 1200V Original PDF
    PDMB300B12C Nihon Inter Electronics IGBT MODULE Dual 300A 1200V Original PDF

    PDMB300B12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDMB300B12C

    Abstract: No abstract text available
    Text: IGBT MODULE PDMB300B12C Dual 300A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 500g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


    Original     		PDF PDMB300B12C PDMB300B12C

    PDMB300B12

    Abstract: No abstract text available
    Text: IGBT MODULE PDMB300B12 Dual 300A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension mm Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation


    Original     		PDF PDMB300B12 PDMB300B12

    PDMB300B12

    Abstract: PDMB300B12C
    Text: QS043-401M0062 2/4 ＰＤＭＢ３００Ｂ１２ ＩＧＢＴ Ｍｏｄｕｌｅ－Ｄｕａｌ ３００ Ａ，１２００Ｖ □ 外 形 寸 法 図 ： ＯＵＴＬＩＮＥ ＤＲＡＷＩＮＧ 6 5 5(E1) 4(G1) 4 25 9 16 25 9 16 7 3 2 6 5 4 25 24 9


    Original     		PDF QS043-401M0062 PDMB300B12 PDMB300B12C i2000 PDMB300B12 PDMB300B12C

    PT76S16

    Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
    Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


    Original     		PDF

    508RP

    Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
    Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


    Original     		PDF

    1200VIGBT

    Abstract: No abstract text available
    Text: ｢Ｂシリーズ｣ 1200V IGBTモジュールの紹介 高速性と低損失を実現した 新世代チップを採用 日本インター株式会社 モジュール製品部 主な特性の改良点 Ｃシリーズとの比較


    Original     		PDF 1200VIGBT 100mA 00A/s 100A1 20kW440VPWM 20kHz PDMB100C12 PDMB100B12 CM100TU-24F 1200VIGBT

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


    Original     		PDF C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16

    FCGS20A12

    Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
    Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ


    Original     		PDF