Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PDTA123JMB Search Results

    SF Impression Pixel

    PDTA123JMB Price and Stock

    Rochester Electronics LLC PDTA123JMB,315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PDTA123JMB,315 Bulk 190,000 11,225
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    PDTA123JMB,315 Bulk 80,000 11,225
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Nexperia PDTA123JMB,315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PDTA123JMB,315 Reel 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.03492
    		Buy Now
    Avnet Americas PDTA123JMB,315 Reel 6 Weeks 30,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Mouser Electronics PDTA123JMB,315
    • 1 $0.27
    • 10 $0.182
    • 100 $0.089
    • 1000 $0.052
    • 10000 $0.034
    		Get Quote
    Rochester Electronics PDTA123JMB,315 80,000 1
    • 1 $0.0257
    • 10 $0.0257
    • 100 $0.0242
    • 1000 $0.0218
    • 10000 $0.0218
    		Buy Now
    TTI PDTA123JMB,315 Reel 30,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    NXP Semiconductors PDTA123JMB,315

    PDTA123JMB - Small Signal Bipolar Transistor, 0.1A, 50V, PNP, XQFN3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics PDTA123JMB,315 190,000 1
    • 1 $0.0257
    • 10 $0.0257
    • 100 $0.0242
    • 1000 $0.0218
    • 10000 $0.0218
    		Buy Now

    PDTA123JMB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PDTA123JMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 47 kOhm Original PDF
    PDTA123JMB,315 NXP Semiconductors PDTA123JMB - PDTA123JMB - PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 47 kOhm Original PDF

    PDTA123JMB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTC123JMB

    Abstract: No abstract text available
    Text: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB

    PDTC123JMB

    Abstract: No abstract text available
    Text: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    smd transistor footprint

    Abstract: PDTC123JMB
    Text: 83B PDTC123JMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123JMB DFN1006B-3 OT883B) PDTA123JMB. AEC-Q101 smd transistor footprint PDTC123JMB

    PDTC123JMB

    Abstract: No abstract text available
    Text: 83B PDTC123JMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PDTC123JMB DFN1006B-3 OT883B) PDTA123JMB. AEC-Q101 PDTC123JMB