PDTC114TE |
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NXP Semiconductors
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PDTC114TE - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open - hFE max: 600 ; hFE min: 100 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; VCEO max: 50 V |
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PDTC114TE |
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Philips Semiconductors
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NPN Resistor-Equipped Transistor, R1 = 10 kohm, R2 = open |
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PDTC114TE |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114TE,115 |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open - hFE max: 600 ; hFE min: 100 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; VCEO max: 50 V; Package: SOT416 (SC-75); Container: Tape reel smd |
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PDTC114TE,145 |
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NXP Semiconductors
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PDTC114TE - PDTC114TE - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open |
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PDTC114TE/DG,115 |
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NXP Semiconductors
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PDTC114TE/DG - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open, SOT416 Package, Standard Marking, Reel Pack, SMD, 7" |
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PDTC114TEF |
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Philips Semiconductors
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PDTC114TEF,115 |
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Philips Semiconductors
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Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS NPN 150MW SC89 |
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PDTC114TET4 |
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Philips Semiconductors
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NPN resistor-equipped transistor |
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PDTC114TET/R |
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NXP Semiconductors
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NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open - hFE max: 600 ; hFE min: 100 ; IO max: 100 mA; Input resistor: 10 kOhm; Polarity: NPN ; Ptot max: 150 mW; VCEO max: 50 V |
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