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    PEAK REPETITIVE FORWARD CURRENT 2.0 Search Results

    PEAK REPETITIVE FORWARD CURRENT 2.0 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    PEAK REPETITIVE FORWARD CURRENT 2.0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4151

    Abstract: No abstract text available
    Text: 1N4151 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current


    Original     		PDF 1N4151 D-74025 12-Dec-94 1N4151

    BAY80

    Abstract: No abstract text available
    Text: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current


    Original     		PDF BAY80 12-Dec-94 D-74025 BAY80

    1N4154

    Abstract: telefunken 1n4154
    Text: 1N4154 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current


    Original     		PDF 1N4154 D-74025 12-Dec-94 1N4154 telefunken 1n4154

    BAY80

    Abstract: No abstract text available
    Text: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		PDF BAY80 01-Apr-99 D-74025 BAY80

    1N4151

    Abstract: 1n4151 VISHAY
    Text: 1N4151 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		PDF 1N4151 01-Apr-99 D-74025 1N4151 1n4151 VISHAY

    Telefunken

    Abstract: 9154 1N4154 telefunken 1n4154
    Text: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    Original     		PDF 1N4154 01-Apr-99 D-74025 Telefunken 9154 1N4154 telefunken 1n4154

    BAV100

    Abstract: BAV101 BAV102 BAV103
    Text: BAV100.BAV103 Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current


    Original     		PDF BAV100. BAV103 BAV100 BAV101 BAV102 BAV100 BAV101 BAV102 BAV103

    BAY80

    Abstract: No abstract text available
    Text: BAY80 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		PDF BAY80 1994in D-74025 BAY80

    1N4154

    Abstract: 1N4154 telefunken
    Text: 1N4154 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		PDF 1N4154 TLx25 D-74025 1N4154 1N4154 telefunken

    MA174

    Abstract: MA4X174
    Text: Switching Diodes MA4X174 MA174 Silicon planar type Unit : mm 2.90+0.02 –0.05 For small power rectification and surge absorption 1.9±0.2 200 V Repetitive peak reverse voltage VRRM 250 V Non-repetitive peak forward surge current VRSM 300 V IO 100 mA Repetitive peak forward current*1


    Original     		PDF MA4X174 MA174) 25nductor MA174 MA4X174

    1N4151

    Abstract: TLX2
    Text: 1N4151 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp=1ms Repetitive peak forward current


    Original     		PDF 1N4151 TLx25 D-74025 1N4151 TLX2

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MUR3005PT-MUR3060PT 30A ULTRAFAST RECTIFIER MAXIMUM RATINGS MUR Rating Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR IF(AV) Peak repetitive forward current, per leg


    Original     		PDF MUR3005PT-MUR3060PT MUR3020PT, MUR3030PT, MUR3040PT

    BAV103 temic

    Abstract: BAV100 BAV101 BAV102 BAV103 bav100.bav103 VR100V
    Text: BAV100.BAV103 Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive p ppeak reverse voltage g Test Conditions Reverse voltage g Peak forward surge current Repetitive peak forward current


    Original     		PDF BAV100. BAV103 BAV100 BAV101 BAV102 BAV103 temic BAV100 BAV101 BAV102 BAV103 bav100.bav103 VR100V

    Untitled

    Abstract: No abstract text available
    Text: CMC02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC02 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • Average forward current: IF AV = 1.0 A • Low forward voltage: VFM = 1.0 V (max.) • Repetitive peak forward current: IFRM = 150 A (Note 2)


    Original     		PDF CMC02

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS USD520-USD550 SCHOTTKY RECTIFIERS MAXIMUM RATINGS Symbol Value Peak repetitive forward current @ TC = 115°C Rated VR, square wave, 20 kHz, 50% duty cycle Parameter IFRM 150A Average forward current @ TC = 115°C IF(AV) 75A Non-repetitive peak surge current (8.3ms)


    Original     		PDF USD520-USD550 MIL-PRF-19500,

    BAV70

    Abstract: SOT23 DIODE marking CODE AV
    Text: BAV70 SMALL SIGNAL DIODE 3 1 2 Marking Code: A4 SOT-23 Plastic Package Absolute Maximum Ratings* Ta = 25OC Symbol Limits Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current IF(AV) 200 mA Non-repetitive peak forward surge current


    Original     		PDF BAV70 OT-23 BAV70 SOT23 DIODE marking CODE AV

    Untitled

    Abstract: No abstract text available
    Text: CMC01 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC01 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage • : VRRM = 400 V • Average forward current: IF AV = 1.0 A • Repetitive peak forward current: IFRM = 150 A (Refer to the Note 2)


    Original     		PDF CMC01

    Untitled

    Abstract: No abstract text available
    Text: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A


    Original     		PDF MP7001

    CMC02

    Abstract: No abstract text available
    Text: CMC02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CMC02 For Strobe Discharge Circuit Unit: mm • Repetitive peak reverse voltage: VRRM = 400 V • Average forward current: IF AV = 1.0 A • • • Low forward voltage: VFM = 1.0 V (max.) Repetitive peak forward current: IFRM = 150 A (Note 2)


    Original     		PDF CMC02 CMC02

    MP7001

    Abstract: MP700
    Text: MP7001 TOSHIBA Power Module MP7001 1. Maximum Ratings Ta = 25°C Diode Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 600 V Peak one cycle surge forward current (D1, D2) (50 Hz, non-repetitive) IFSM 220 A Forward current IF 25 A


    Original     		PDF MP7001 MP7001 MP700

    Untitled

    Abstract: No abstract text available
    Text: _ BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose y Absolute Maximum Ratings Tj = 25° C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current


    OCR Scan     		PDF BAY80 -Apr-99 01-Apr-99

    BAY80

    Abstract: No abstract text available
    Text: BAY80_ Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current


    OCR Scan     		PDF BAY80_ 01-Apr-99 01-Apr-99 BAY80

    Untitled

    Abstract: No abstract text available
    Text: 1N4154 vishay Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches ^ ft 94 9367 Absolute Maximum Ratings Tj = 25 C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current


    OCR Scan     		PDF 1N4154 01-Apr-99

    Untitled

    Abstract: No abstract text available
    Text: Te m ic BAY80 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purpose Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Repetitive peak reverse voltage Reverse voltage Peak forward surge current t p= l iS Repetitive peak forward current


    OCR Scan     		PDF BAY80