Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TB
PG2012TB
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HS350
Abstract: VP215 SW SPDT 6pin
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2012TB
PG2012TB
HS350
VP215
SW SPDT 6pin
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SW SPDT 6pin
Abstract: HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PG2012TB
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT PG2012TB L-BAND SPDT SWITCH DESCRIPTION The PG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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Original
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PDF
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PG2012TB
PG2012TB
HS350
WS260
VP215
IR260
PG10218EJ01V0DS
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2012TB L-BAND SPDT SWITCH DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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Original
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PDF
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PG2012TB
PG2012TB
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