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    HS350

    Abstract: PG2155TB
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    HS350

    Abstract: PG2155TB
    Text: GaAs INTEGRATED CIRCUIT PG2155TB 4 W HIGH POWER SPDT SWITCH DESCRIPTION The μPG2155TB is a SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high linearity.


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    PDF PG2155TB PG2155TB HS350

    Untitled

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT PG2155TB L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The PG2155TB is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high


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    PDF PG2155TB PG2155TB PG10583EJ02V0DS

    HS350

    Abstract: PG2155TB
    Text: GaAs INTEGRATED CIRCUIT PG2155TB 4 W HIGH POWER SPDT SWITCH DESCRIPTION The μPG2155TB is a SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high linearity.


    Original
    PDF PG2155TB PG2155TB HS350

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2155TB L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The μPG2155TB is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high


    Original
    PDF PG2155TB PG2155TB

    NEC MARK E4 RF

    Abstract: HS350 PG2155TB NEC MARKING surface
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2155TB L-BAND 4 W HIGH POWER SPDT SWITCH DESCRIPTION The μPG2155TB is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high


    Original
    PDF PG2155TB PG2155TB NEC MARK E4 RF HS350 NEC MARKING surface