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    ne3512s02 s2p

    Abstract: gaas fet micro-X Package NE3512S02-T1D-A NE3512S02-T1D-A and s2p rogers 5880 HS350 NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RT DUROID 5880

    Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1D NE3512S02-T1C-A NE3512S02-T1D-A NE3512S02-A PG10592EJ01V0DS RT DUROID 5880 NE3512 PG10592EJ01V0DS HS350

    NE3512S02-T1D-A and s2p

    Abstract: rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A NE3512S02-T1D-A and s2p rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350

    ne3512s02 s2p

    Abstract: NE3512S02 NE3512 lnb ku-band NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A HS350 NE3512S02-T1C NE3512S02-T1
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A ne3512s02 s2p NE3512S02 NE3512 lnb ku-band NE3512S02-T1C-A NE3512S02-T1D NE3512S02-T1D-A HS350 NE3512S02-T1C NE3512S02-T1