Contextual Info: PG1383 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)10

IR TRANSISTOR

Abstract: PGI386 2N40 2N4070 PG1384 PGI380 PGI381 PGI382 PGI383 PGI385
Contextual Info: ,0043592 - v .' •■' ë * . A-' v-j- t; : , ” . A P I E L E C T RONICS I NC DE |0043Scia D00 D1 E0 a 13 _ 1 3 A 0 1 2 0 ITj t e r i m T ~ ^ 3 " // b u l l e t in S u b je ct to Revision Without N otice. z i f r i ' s * * 1•- ‘• -July 20, 1971

2n4070

Abstract: pg2380
Contextual Info: r-> NPN Type l ’ÏÎ ' -Hi • Linear hFE from 50 mfl to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVCeoi.u>>to 100 volts V ' ïéj • æ z z r ^ T ’ rrr rs ? • a' - :

transistor n53

Abstract: 2N4070 PGI386 PGI380 PGI381 PGI382 PGI383 PGI385
Contextual Info: 004359 2 13 A PI E L E C T RO NI CS 1 3 A 0 1 20 INC d e | a o t a s i a onnaiao 2 Jj j e T ^ 3 “// B U L L E T lW r im Subject to Revision W ithout Notice. ‘ - J u ly 2 0 , 1971 . . POWER TRANSISTOR ENGINEERING RiJU ttlN 10 AMP NPN PLANAR TO ~3 PREMIUM GRADE

Contextual Info: T3 D E I □ 0 4 3 S c12 se i □□□□□14 7 -3 3 - 0 1 '• *' 3 > 'i * k t t ì l S X 10 AMP 100 VOLT 65 WATT 60 MHz TO-3 • Linear hFE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical