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    Untitled

    Abstract: No abstract text available
    Text: PG2365 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)10


    Original     		PDF PG2365 Freq60MÃ

    pg2360

    Abstract: A 61
    Text: • Linear hFE from 50 mA to 10 amps • Low saturation voltage at maximum collector current • High frequency ft = 60 MHz typical • High voltage, BVceoi. u. i to 100 volts fMsL .-te.1 .ter, -v hF E hFE (s u s ) o BV ceo Min Max 8 8 8 8 20 40 20 40 20


    OCR Scan     		PDF PG1360 PG1361 PG1362 PG1363 PG1364 PG1365 PG1366 PG2365 PG2366 PG2367 pg2360 A 61