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    PHASE SHIFT CIRCUIT NATIONAL SEMICONDUCTOR Search Results

    PHASE SHIFT CIRCUIT NATIONAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PHASE SHIFT CIRCUIT NATIONAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    limiter-discriminator

    Abstract: LMX2240 rf voltmeter circuit diagrams 1000X AN-1020 C1996
    Text: National Semiconductor Application Note 1020 Wireless Communications December 1995 SUMMARY The applications for the LMX2240 IF Receiver are discussed Practical limitations of high frequency IF demodulators are examined and methods to cope with these limitations are introduced Specifically methods to reduce the


    Original     		PDF LMX2240 limiter-discriminator rf voltmeter circuit diagrams 1000X AN-1020 C1996

    LM8261

    Abstract: AN-1245 HP4195A LM8272 AN1245 phase shift circuit National Semiconductor
    Text: National Semiconductor Application Note 1245 Hooman Hashemi September 2002 Whether or not an Op Amp circuit is capable of driving a capacitive load successfully, depends on several factors: 1. Op Amp internal architecture e.g. ROUT, Phase Margin, Compensation, etc.


    Original     		PDF AN-1245 LM8261 AN-1245 HP4195A LM8272 AN1245 phase shift circuit National Semiconductor

    transmission lines Twisted Pair

    Abstract: U 806 DI AN-806 AN-807 AN-808 C1996 Z02B
    Text: National Semiconductor Application Note 806 Kenneth M True February 1996 OVERVIEW This application note discusses the general characteristics of transmission lines and their derivations Here using a transmission line model the important parameters of characteristics impedance and propagation delay are developed


    Original     		PDF AN-807 AN-808) transmission lines Twisted Pair U 806 DI AN-806 AN-808 C1996 Z02B

    AN-806

    Abstract: AN-807 AN-808 1969 fairchild AN-806 "cross reference"
    Text: National Semiconductor Application Note 806 Kenneth M. True April 1992 Overview between the conductors. From electrostatic theory it is known that the voltage V produced by a static electric field E is given by This application note discusses the general characteristics of


    Original     		PDF AN-807 AN-808) AN-806 AN-806 AN-808 1969 fairchild AN-806 "cross reference"

    pin diagram of 741 op-amp

    Abstract: journal op-amp 741 LM741 single op-amp opamp 741 lm741 block diagram of amplifier using LM741 LM741 NON INVERTING AMPLIFIER 741 OP Amp LM741 NON INVERTING AND INVERTING AMPLIFIER USE OF TRANSISTOR
    Text: Op-Amp Basics Peggy Alavi Application Engineer September 3, 2003 SLIDE 1 OP-AMP BASICS PEGGY ALAVI, APPLICATION ENGINEER, AMPLIFIERS GROUP NATIONAL SEMICONDUCTOR Presentation Transcript 1 Op-Amp Basics – Part 1 • Op-Amp Basics – Why op-amps – Op-amp block diagram


    Original     		PDF

    AN-806

    Abstract: AN-807 AN-808 1969 fairchild
    Text: National Semiconductor Application Note 806 Kenneth M. True April 1992 OVERVIEW This application note discusses the general characteristics of transmission lines and their derivations. Here, using a transmission line model, the important parameters of characteristics impedance and propagation delay are developed in


    Original     		PDF AN-807 AN-808) AN-806 AN-806 AN-808 1969 fairchild

    faraday formula

    Abstract: AN-806 AN-807 AN-808
    Text: National Semiconductor Application Note 806 Kenneth M. True April 1992 OVERVIEW This application note discusses the general characteristics of transmission lines and their derivations. Here, using a transmission line model, the important parameters of characteristics impedance and propagation delay are developed in


    Original     		PDF AN-807 AN-808) an011336 faraday formula AN-806 AN-808

    DD 127 transistor

    Abstract: 8439 disadvantage of crystal oscillator transistor use in oscillator RC phase shift oscillator AN-400 C1995 COP410C COP444C transistor study
    Text: National Semiconductor Application Note 400 Abdul Aleaf August 1986 INTRODUCTION The most important characteristic of CMOS-COPS is its low power consumption This low power feature does not exist in TTL and NMOS systems which require the selection of low power IC’s and external components to reduce power


    Original     		PDF

    lm317 pnp Transistor

    Abstract: AN-1148 bode plot technique of plot ldo lm317 LM1085 LM317 LM340 AN101239-9 AN1148 AN101239-2
    Text: National Semiconductor Application Note 1148 Chester Simpson May 2000 Introduction The explosive proliferation of battery powered equipment in the past decade has created unique requirements for a voltage regulator that cannot be met by the industry standards


    Original     		PDF LM340 LM317. lm317 pnp Transistor AN-1148 bode plot technique of plot ldo lm317 LM1085 LM317 AN101239-9 AN1148 AN101239-2

    lm317 pnp Transistor

    Abstract: AN-1148 LM1085 LM317 LM340 LP2985 LP2989 bode plot technique of plot LM317 ldo
    Text: National Semiconductor Application Note 1148 Chester Simpson May 2000 Introduction The explosive proliferation of battery powered equipment in the past decade has created unique requirements for a voltage regulator that cannot be met by the industry standards like the LM340 or the LM317. These regulators use an


    Original     		PDF LM340 LM317. lm317 pnp Transistor AN-1148 LM1085 LM317 LP2985 LP2989 bode plot technique of plot LM317 ldo

    LM108

    Abstract: LM108 EQUIVALENT lm108 applications 7328 LB-14 NATIONAL amp 7328 C1995 LM101A LB-14
    Text: National Semiconductor Linear Brief 14 November 1970 Feedforward frequency compensation of operational amplifiers can provide a significant increase in slew rate and bandwidth over standard lag compensation When feedforward compensation is applied to the LM101A operational


    Original     		PDF LM101A LM108 LM108 LM108 EQUIVALENT lm108 applications 7328 LB-14 NATIONAL amp 7328 C1995 LB-14

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor Application Note 1643 Chester Simpson May 2007 Introduction and R2 are external to the IC , a capacitor can be placed across R1 to add feedforward compensation which will also add phase lead. All linear voltage regulators use a feedback loop which controls the amount of current sent to the load as required to hold


    Original     		PDF AN-1643

    opto coupler

    Abstract: of an optocoupler LM2587 nonisolated flyback converter opto-coupler OPTOCOUPLER CNY17 LM258X 6 pin Optocoupler Opto Couplers opto isolator
    Text: National Semiconductor Application Note 1095 Ravindra Ambatipudi August 1998 Introduction DESIGN OF POWER STAGE COMPONENTS Isolated converters are required to provide electrical isolation between two interrelated systems. Isolation between the power source and the load is required in certain applications


    Original     		PDF UL1459, AN-1095 opto coupler of an optocoupler LM2587 nonisolated flyback converter opto-coupler OPTOCOUPLER CNY17 LM258X 6 pin Optocoupler Opto Couplers opto isolator

    OPTO COUPLER

    Abstract: LM2587 OPTO-coupler used for current output optocoupler base resistor OPTO ISOLATOR optocoupler 8 pin configuration optO isolators AN-1095 LM258X LM3411
    Text: National Semiconductor Application Note 1095 Ravindra Ambatipudi August 1998 INTRODUCTION Isolated converters are required to provide electrical isolation between two interrelated systems. Isolation between the power source and the load is required in certain applications


    Original     		PDF UL1459, tio959 OPTO COUPLER LM2587 OPTO-coupler used for current output optocoupler base resistor OPTO ISOLATOR optocoupler 8 pin configuration optO isolators AN-1095 LM258X LM3411

    LIDAR radar

    Abstract: ADC digital calibration time interleaved ADC081000 ADC081500 ADC083000 ADC08500 ADC08B3000 ADC08D1000 ADC08D1020 ADC08D1500
    Text: GHz Sampling Design Challenge 1 National Semiconductor Ghz Ultra High Speed ADCs Target Applications Test & Measurement Communications Transceivers Ranging Applications Lidar/Radar Set-top box direct RF down-conversion Highest Performance Highest Dynamic Performance


    Original     		PDF ADC083000 ADC08B3000 ADC08D1520 ADC08D1500 ADC081500 ADC08D1020 ADC08D1000 ADC081000 ADC085eans ADC08Dxxxx LIDAR radar ADC digital calibration time interleaved ADC081000 ADC081500 ADC083000 ADC08500 ADC08B3000 ADC08D1000 ADC08D1020 ADC08D1500

    fast photodiode amplifier

    Abstract: AN-1244 AN1244 "Photo Diode" photo diode photo diode amplifier Q1 photo CLC450 LMH6642 photodiode amplifier
    Text: National Semiconductor Application Note 1244 Hooman Hashemi September 2002 Converting the small output current of a photo-diode transducer to a fast responding voltage is often challenging. Here are some ways to use high-speed Current Feedback and Voltage Feedback op amps to do the job


    Original     		PDF AN-1244 fast photodiode amplifier AN-1244 AN1244 "Photo Diode" photo diode photo diode amplifier Q1 photo CLC450 LMH6642 photodiode amplifier

    op amp lead-lag compensation

    Abstract: LMH6624 AN-1604 AN1604
    Text: National Semiconductor Application Note 1604 Shuqing Jing September 2007 Abstract Compared with the unity gain stable amplifier, the decompensated version has the following advantages: 1. An open-loop gain which extends to a higher frequency. 2. A higher frequency closed-loop bandwidth.


    Original     		PDF AN-1604 op amp lead-lag compensation LMH6624 AN-1604 AN1604

    ic LM386 wein bridge

    Abstract: sine wave crystal controlled oscillator 2N3819 fet lm311 lm386 controlling ic lm311 2n3819 equivalent ic Sine Wave Generation Techniques alternative of LM386 100 khz crystal mm74193
    Text: National Semiconductor Application Note 263 October 1999 Producing and manipulating the sine wave function is a common problem encountered by circuit designers. Sine wave circuits pose a significant design challenge because they represent a constantly controlled linear oscillator. Sine


    Original     		PDF

    ic lm741 national semiconductor

    Abstract: LM741 op amp datasheet and circuit LM741 Application LM741 Data Sheet data sheet lm741 lm741 OP Amp LM118 LM741 INVERTING AMPLIFIER LM741 equivalent features LM741
    Text: National Semiconductor Linear Brief 17 September 1971 One of the greatest limitations of today’s monolithic op amps is speed With unity gain frequency compensation general purpose op amps have 1 MHz bandwidth and 0 3 Vms slew rate Optimized compensation as well as feedforward compensation can improve op amp speed for some


    Original     		PDF LM118 ic lm741 national semiconductor LM741 op amp datasheet and circuit LM741 Application LM741 Data Sheet data sheet lm741 lm741 OP Amp LM741 INVERTING AMPLIFIER LM741 equivalent features LM741

    LM118

    Abstract: LB-17 linear brief 17 ic lm741 national semiconductor LM101A LM741 LM741 INVERTING AMPLIFIER national semiconductor LM741
    Text: National Semiconductor Linear Brief 17 September 1971 One of the greatest limitations of today’s monolithic op amps is speed. With unity gain frequency compensation, general purpose op amps have 1 MHz bandwidth and 0.3 V/µs slew rate. Optimized compensation as well as feedforward compensation can improve op amp speed for some applications.


    Original     		PDF LM118. LB-17 LM118 LB-17 linear brief 17 ic lm741 national semiconductor LM101A LM741 LM741 INVERTING AMPLIFIER national semiconductor LM741

    7483 IC

    Abstract: ic 7483 pin configuration of IC 7483 ic 7483 pin diagram for IC 7483 applications of IC 7483 7483 IC APPLICATIONS 7483 comparator Datasheet of IC 7483 data sheet ic 7483
    Text: National Semiconductor Application Note 263 March 1981 Producing and manipulating the sine wave function is a common problem encountered by circuit designers Sine wave circuits pose a significant design challenge because they represent a constantly controlled linear oscillator Sine


    Original     		PDF

    injection transformer

    Abstract: an1889 pcb step down transformer AN-1889 national step up an down transformer AN-1889 Signal Path Designer high frequency step up transformer sine National Semiconductor
    Text: National Semiconductor Application Note 1889 Frederik Dostal October 14, 2008 Introduction The regulation characteristics of most power management circuits are defined by the converter loop transfer function which can be plotted in a Bode plot. This representation of the


    Original     		PDF AN-1889 injection transformer an1889 pcb step down transformer AN-1889 national step up an down transformer AN-1889 Signal Path Designer high frequency step up transformer sine National Semiconductor

    7-bit programmable counter

    Abstract: No abstract text available
    Text: PRELIMINARY Semiconductor February 1999 LMX3162 Single Chip Radio Transceiver General Description The LMX3162 Single Chip Radio Transceiver is a monolithic, integrated radio transceiver optimized for use in ISM 2.45 GHz wireless systems. It is fabricated using National’s ABiC


    OCR Scan     		PDF LMX3162 7-bit programmable counter

    DECT RF Transceiver 1.9 ghz

    Abstract: image of 12 cmos 12 stage binary counter LMX3161 Voltage Doubler with 555 circuit
    Text: bSD1122 OOflb'in S3b ADVANCE INFORMATION Semiconductor September 1996 LMX3161 Single Chip Radio Transceiver General Description The LMX3161 Transceiver is a monolithic, integrated radio transceiver optimized for use in the Digital Enhanced Cord­ less Telecommunications DECT system. It is fabricated


    OCR Scan     		PDF bSD1122 LMX3161 DECT RF Transceiver 1.9 ghz image of 12 cmos 12 stage binary counter Voltage Doubler with 555 circuit