Ferrite for Switching Power Supplies
Abstract: ferrite phase shifters military radars
Text: Racal-MESL S-Band Ferrite Phaseshifter FERRITE PHASESHIFTERS APPLICATIONS • 3-D Air, Ground and Naval Radars • Satellite Beam Forming Networks FEATURES • Frequency ranges available include S-Band to Ku-Band • High Peak and Average Power Designs • Integrated Electronic Driver
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120mA
140mA
200mA
Ferrite for Switching Power Supplies
ferrite phase shifters
military radars
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ferrite phase shifters
Abstract: No abstract text available
Text: Racal-MESL C-Band Ferrite Phaseshifter FERRITE PHASESHIFTERS APPLICATIONS • 3-D Air, Ground and Naval Radars • Satellite Beam Forming Networks FEATURES • Frequency ranges available include S-Band to Ku-Band • High Peak and Average Power Designs • Integrated Electronic Driver
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10kHz
600mA
ferrite phase shifters
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hp pin diode
Abstract: Microwave PIN diode HPND-4165 mini circulator phase shifter circulator AN929 HPND-4005 hp 3101 pin M 4005 G is what type of transistor 30 MHz phase shifters
Text: Applications of PIN Diodes Application Note 922 Introduction The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance value that can be varied
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HPND-4005
MTT-35,
hp pin diode
Microwave PIN diode
HPND-4165
mini circulator
phase shifter circulator
AN929
HPND-4005
hp 3101 pin
M 4005 G is what type of transistor
30 MHz phase shifters
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AN6247
Abstract: phase sequence detector chroma key CA3126 RCA Solid State signal detection circuit "peak hold" constant vol transistor horizontal section tv transistor r47
Text: Application of the CA3126 Chroma-Processing IC Using Sample-and-Hold Circuit Techniques Application Note AN6247 As contrasted with prior state-of-the-art IC designs, sample and-hold techniques are used in the phase detectors for the AFPC and the ACC-killer loops of the CA3126. The
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CA3126
AN6247
CA3126.
BTR-19,
AN6247
phase sequence detector
chroma key
RCA Solid State
signal detection circuit "peak hold" constant vol
transistor horizontal section tv
transistor r47
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LT5568
Abstract: No abstract text available
Text: LT5575 800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Frequency Range: 0.8GHz to 2.7GHz* 50Ω Single-Ended RF and LO Ports High IIP3: 28dBm at 900MHz, 22.6dBm at 1.9GHz
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LT5575
800MHz
28dBm
900MHz,
60dBm
900MHz
16-Lead
LT5568
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phase shifter
Abstract: "Phase Shifter" TGP1439 phaseshifter
Text: Product Application Note October 31, 2001 Adjusting the TGP1439 5-Bit Phase Shifter to Perform as 4-Bit or 3-Bit Phase Shifters Background: The TGP1439 device was originally designed as a 5-bit phase-shifter. This device can also be implemented as a 4-bit and 3-bit phase shifter by adjusting the
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TGP1439
phase shifter
"Phase Shifter"
phaseshifter
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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AN-957
Abstract: circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
Text: Applications of PIN Diodes Application Note 922 Introduction Characteristics of the PIN Diode The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance
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have5771-26
5965-8666E
AN-957
circulator s-band datasheet
HPND-4165
mini circulator
nkt ceramic
UHF Phase Shifter
AN929
HPND-4005
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phase shifter circulator
Abstract: HPND-4005 Microwave PIN diode AN929 HPND-4165 tunnel diode
Text: Applications of PIN Diodes Application Note 922 Introduction The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance value that can be varied
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HPND-4005
MTT-35,
5954-2147E
5965-8666E
phase shifter circulator
HPND-4005
Microwave PIN diode
AN929
HPND-4165
tunnel diode
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RF MESFET S parameters
Abstract: TQTRX
Text: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant
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LT5575
Abstract: power combiner broadband transformers LT5575EUF MO-220 LT5575EUF#PBF LT phase shifter dc to 100mhz dsb 646 LT5568
Text: LT5575 800MHz to 2.7GHz High Linearity Direct Conversion Quadrature Demodulator DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Input Frequency Range: 0.8GHz to 2.7GHz* 50Ω Single-Ended RF and LO Ports High IIP3: 28dBm at 900MHz, 22.6dBm at 1.9GHz
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LT5575
800MHz
28dBm
900MHz,
60dBm
900MHz
16-Lead
LT5575
power combiner broadband transformers
LT5575EUF
MO-220
LT5575EUF#PBF LT
phase shifter dc to 100mhz
dsb 646
LT5568
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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IC L358
Abstract: cl3520 CT-0245AQ4-R L353-0119-3 CT-0245AQ3-R L351 AT82 L353-0057-8 MC-401RC HD-21503S
Text: Contents Series WS No. Part No. Page Circulators-lsolators CL351—0010~ 1 CT-0245AQ2-R C L351-0011-4 CT-0245AQ3-L C L351-0012-7 CL351-0013-0 CT-0245AQ3-R CT-0245AQ4-R CL351-0005-1 CT-0395BR6-R CL351-0006-4 CT-0395BR6-R-3 CL351-0008-0 CT-1310CQ6-L C L351-0009-2
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CL351--
L351-0011-4
L351-0012-7
CL351-0013-0
CL351-0005-1
CL351-0006-4
CL351-0008-0
L351-0009-2
CT-0245AQ2-R
CT-0245AQ3-L
IC L358
cl3520
CT-0245AQ4-R
L353-0119-3
CT-0245AQ3-R
L351
AT82
L353-0057-8
MC-401RC
HD-21503S
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hp pin diode
Abstract: multi port circulator
Text: That HEWLETT rnücM PACKARD Applications o f PIN Diodes Application Note 922 Introduction The m ost im portant property of the PIN diode is the fact that it can, under certain circumstances, behave as an alm ost pure resis tance at RF frequencies, with a
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MTT-35,
hp pin diode
multi port circulator
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4430W
Abstract: No abstract text available
Text: REV AUTH □ATE REV AUTH DATE B RL A 4 -4 0 0 7 /1 2 /0 1 0 3 /0 2 /0 7 INITIAL RELEASE NOTES, TITLE BLOCK UPDATED SMA CONN. X .2 5 DP SLOTTED SHAFT ON NOTES: 1. ALL STANDARD MODELS COME WITH LOCK NUT & KNOB 2. ALL MODELS HAVE AN RF POWER RATING OF 100W AVERAGE & 3 KW PEAK
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p140xx
4430W
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Untitled
Abstract: No abstract text available
Text: Section 8 Control Components [ SW ITCHES ] CONTROL COMPONENTS ( ATTENUATORS " COUPLERS ) [ [ PHASE-SHIFTERS MODULATORS ) ) ( LIMITERS ) GEC P L E S S E Y SEMICONDUCTORS 375 Control Components S w itc h e s • 1 0 M H z to 1 1 0 G H z • P h a s e M a tc h in g
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ML4663
Abstract: No abstract text available
Text: M L 4000 SERIES BROADBAND PIN DIODES The M L 4660 and 4670 Series contain a passivated PIN diode chip mounted in shunt w ithin a broadband herm etically sealed package that elim inates the reliability problems associated with devices using epoxy seals. T hese devices have
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18GHz
100mA
ML4663
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Phase Discriminators
Abstract: rf detector diodes
Text: Application Information Test & Measurement Networks Measurement of Transfer Characteristics The transfer characteristics of a device can be rapidly and accurately determined over wide bandwidths with a correlator connected as shown in Fig. 7. Figure 7 - Connection Of Correlator For Determination
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