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    PHOTODIODE APPLICATION LUXMETER Search Results

    PHOTODIODE APPLICATION LUXMETER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    PHOTODIODE APPLICATION LUXMETER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BPW34 application note

    Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
    Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be


    Original     		PDF 14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
    Text: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		PDF 27-Aug-08 BPW34 application note APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram

    Measurement Techniques

    Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
    Text: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical


    Original     		PDF 31-Jul-12 Measurement Techniques measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note

    near IR sensors with daylight filter

    Abstract: light sensing circuit project BPW34 application note BPW20RF
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original     		PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF

    BPW20RF

    Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
    Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original     		PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram

    BPW34 application note

    Abstract: No abstract text available
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°


    Original     		PDF VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
    Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original     		PDF VSMF4720 VSMF4720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 lux meter calibration RB94

    BPW34 osram

    Abstract: wi41g BPW34 application note
    Text: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm


    Original     		PDF VSMY1850X01 AEC-Q101 J-STD-020 2002/95/EC 2002/96/EC VSMY1850X01 2002/95/EC. 2011/65/EU. JS709A BPW34 osram wi41g BPW34 application note

    BPW34 smd

    Abstract: smd resistor 8606 BPW34 application note
    Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original     		PDF VSMF4710 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 smd smd resistor 8606 BPW34 application note

    BPW34 smd

    Abstract: phototransistor application lux meter BPW20
    Text: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75


    Original     		PDF VSMY3850 J-STD-020 2002/95/EC 2002/96/EC VSMY3850 2002/95/EC. 2011/65/EU. JS709A BPW34 smd phototransistor application lux meter BPW20

    lux meter chip

    Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
    Text: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMY1850 J-STD-020 2002/95/EC 2002/96/EC VSMY1850 2002/95/EC. 2011/65/EU. JS709A lux meter chip IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g

    OSRAM IR emitter

    Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
    Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability


    Original     		PDF VSMG2700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A OSRAM IR emitter BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter

    phototransistor application lux meter

    Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF VEMT4700 VSML3710 VEMT4700 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 phototransistor application lux meter BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor

    bpw 75

    Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
    Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability


    Original     		PDF VSML3710 VEMT3700 VSML3710 J-STD-020 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 bpw 75 near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note

    BPW41 circuit application

    Abstract: OSRAM IR emitter
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter

    near IR sensors with daylight filter

    Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
    Text: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original     		PDF w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector

    near IR sensors with daylight filter

    Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
    Text: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into


    Original     		PDF

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW41 remote control
    Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability


    Original     		PDF VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 BPW41 remote control

    Untitled

    Abstract: No abstract text available
    Text: TSL2550 AMBIENT LIGHT SENSOR WITH SMBus INTERFACE r r TAOS029B − JUNE 2005 D Converts Light Intensity to Digital Signal D Infrared Compensation to Approximate PACKAGE D 8-LEAD SOIC TOP VIEW Human Eye Response D D D D D D D Companding A/D for Wide Dynamic Range


    Original     		PDF TSL2550 TAOS029B TSL2550

    N13T2

    Abstract: photodiode application luxmeter IC 555 timer- process control timer using 3 relay ICL7611 Applications KPDC0026EA photodiode application illuminometer ad8001
    Text: Application Circuit Examples (p Low Noise Light-sensitive Preamplifier +15 V Used in receivers for spatial light transmission and optical remote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit outputs an amplified signal from the FET drain, but signals can also be


    OCR Scan     		PDF KPDC0014EB AD549, AD743, AD849, AD8001 OPA111, OPA128, OPA620, OPA648, OPA658 N13T2 photodiode application luxmeter IC 555 timer- process control timer using 3 relay ICL7611 Applications KPDC0026EA photodiode application illuminometer

    lm733

    Abstract: light to voltage converter from luxmeter photodiode application luxmeter LM733P
    Text: Application Circuit Examples 1 Low noise light-sensitive preamplifier Used in receivers for spatial light transm ission and optical remote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.


    OCR Scan     		PDF AD549, 755N/P, PA111, OPA128, OPA620, OPA633, LF357, LF356, LF442, HA2625, lm733 light to voltage converter from luxmeter photodiode application luxmeter LM733P

    photodiode application luxmeter

    Abstract: IC CA3130 application
    Text: Application Circuit Examples C Low Noise Light-sensitive Preamplifier +15 V Used in receivers for spatial light transmission and optical remote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit outputs an amplified signal from the FET drain, but signals can also be


    OCR Scan     		PDF KPDC0014EB AD549, 755N/P, AD743, AD849, AD8001 OPA111, OPA128, OPA620, OPA648, photodiode application luxmeter IC CA3130 application

    photodiode application luxmeter

    Abstract: IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter
    Text: Application Circuit Examples Low noise light-sensitive preamplifier -M 5 V Used in receivers for spatial light transm ission and optical rem ote control. A reverse bias is applied to the photodiode to improve frequency response. This circuit can also be used for interface to an am plifier with a low input resistance.


    OCR Scan     		PDF AD549, AD757, PA620 LF357, LF356, LH0032, LF442, HA2625 A3130 photodiode application luxmeter IS306 light to voltage converter from luxmeter LM733N AD757 Diode IS1588 KPDC0021EA s4751 rca 555 application luxmeter