PHOTODIODE AVALANCHE PHOTODIODE 40 GB Search Results

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Catalog Datasheet	MFG & Type	Document Tags	PDF
PIN photodiode responsivity 1550nm 1.1 Abstract: avalanche photodiode avalanche photodiode 1550nm sensitivity PIN photodiode responsivity 1550nm 2,5 GHz Fujitsu APD avalanche 1550nm photodiode 5 Ghz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz Text: FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA	Original	40GHz 1550nm. In4888 PIN photodiode responsivity 1550nm 1.1 avalanche photodiode avalanche photodiode 1550nm sensitivity PIN photodiode responsivity 1550nm 2,5 GHz Fujitsu APD avalanche 1550nm photodiode 5 Ghz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz	PDF
PIN photodiode responsivity 1550nm 1.1 Abstract: GaP photodiode APD photodiode Avalanche photodiode 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Fujitsu APD photodiode 40ghz Photodiode apd high sensitivity 550NM photodiode avalanche 1550nm photodiode 5 Ghz Text: FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA	Original	40GHz 1550nm. In4888 PIN photodiode responsivity 1550nm 1.1 GaP photodiode APD photodiode Avalanche photodiode 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Fujitsu APD photodiode 40ghz Photodiode apd high sensitivity 550NM photodiode avalanche 1550nm photodiode 5 Ghz	PDF
EMCORE APD Abstract: avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5 Text: PRELIMINARY DATASHEET \| DECEMBER 30, 2005 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode device features high responsivity, low dark current, and facilitates designs that can achieve -34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH	Original	OC-48, STM-16, OC-48 STM-16 EMCORE APD avalanche photodiode photodiode Avalanche photodiode APD photodiode 25G 2.5G APD APD 1550 nm bare die avalanche Photodiode 300 nm avalanche photodiode oc48 1550 fiber 2.5 bare die receiver avalanche 1550 fiber 2.5	PDF
EMCORE APD Abstract: Photodiode apd high sensitivity APD 1550 nm bare die EMCORE fiber avalanche avalanche Photodiode 300 nm avalanche photodiode ghz Text: PRELIMINARY DATASHEET \| NOVEMBER 11, 2004 2.5 Gb/s Avalanche Photodiode Bare Die The 2.5 Gb/s avalanche photodiode chip features high responsivity, low dark current, and facilitates designs that can achieve –34 dBm receiver sensitivity. Target applications include SONET OC-48, SDH STM-16,	Original	OC-48, STM-16, OC-48 STM-16 EMCORE APD Photodiode apd high sensitivity APD 1550 nm bare die EMCORE fiber avalanche avalanche Photodiode 300 nm avalanche photodiode ghz	PDF
10G APD chip Abstract: 10G APD EMCORE APD 10G APD lens APD 10G 10G bare die APD 1550 nm bare die avalanche photodiode ghz OC192 avalanche photodiode avalanche photodiode Text: PRELIMINARY DATASHEET \| MAY 5, 2004 10 Gb/s Avalanche Photodiode Bare Die The 10 Gb/s avalanche photodiode chip incorporates an integrated offset lens and can achieve a gain bandwidth product of > 100 GHz. Target applications include SONET OC-192, SDH STM-64, 10 Gigabit	Original	OC-192, STM-64, 10GBASE-L OC-192 STM-64 10G APD chip 10G APD EMCORE APD 10G APD lens APD 10G 10G bare die APD 1550 nm bare die avalanche photodiode ghz OC192 avalanche photodiode avalanche photodiode	PDF
InGaAs Epitaxx APD Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver Text: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions	Original	1E-10 InGaAs Epitaxx APD EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver	PDF
InGaAs Epitaxx APD Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier Text: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter	Original	578DKX InGaAs Epitaxx APD Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier	PDF
APD 1550 nm bare die Abstract: EMCORE APD Text: G1013-406, 2.5G Avalanche Photodiode APD Bare Die DATASHEET \| MAY 2015 FIBER OPTICS EMCORE’s PS-G1013-406 2.5G Avalanche Photodiode (APD), Top Illuminated APD Chip is designed for GPON ONU and 2.6 Gb/s applications. It has high responsivity and low capacitance with low noise equivalent power and is ideally	Original	G1013-406, PS-G1013-406 G1013-406 APD 1550 nm bare die EMCORE APD	PDF
InGaAs Epitaxx APD Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown	Original	578XCX 578XCX. InGaAs Epitaxx APD receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver	PDF
InGaAs Epitaxx APD Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb	Original	578BKX InGaAs Epitaxx APD Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX	PDF
InGaAs Epitaxx APD Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver Text: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current	Original		PDF
JDSU ERM Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550 Text: COMMUNICATIONS COMPONENTS 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx Key Features • Sensitivity of -27.3 dBm • TIA gain of 5.5 kΩ (differential) • Very small form factor MSA coplanar package • Low cost • Available with FC, LC or SC connectors	Original	ERM578LMX 498-JDSU 5378-JDSU JDSU ERM avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550	PDF
receiver avalanche 1550 fiber 2.5 Abstract: No abstract text available Text: Product Bulletin 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx The JDS Uniphase APD Micro Receiver (ERM 578 LMx) is a 10 Gb/s avalanche photodiode receiver in a small form factor package with differential outputs. Consisting of a 10 Gb/s avalanche photodiode and a high gain SiGe	Original		PDF
578XCX Abstract: avalanche photodiode bias and high voltage Text: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter Measurement	Original	578XCX 10Gb/s avalanche photodiode bias and high voltage	PDF

Untitled Abstract: No abstract text available Text: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal	Original	ONET8551T 20-dBm 92-mW OC-192	PDF
Untitled Abstract: No abstract text available Text: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal	Original	ONET8551T 20-dBm 92-mW OC-192	PDF
ONET8551T Abstract: No abstract text available Text: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal	Original	ONET8551T 20-dBm 92-mW OC-192 ONET8551T	PDF
avalanche photodiode DWDM Abstract: 1550 nm APD optical receivers Text: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V Parameter Measurement Conditions Min APD Breakdown Voltage, Vb Id = 10 µA	Original	578BKX 10Gb/s avalanche photodiode DWDM 1550 nm APD optical receivers	PDF
C30902S Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip	Original	C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S	PDF
PIN APD OPTICAL DIODE Abstract: RA2860D receiver avalanche 1550 optics apd receiver apd 1550, sensitivity 30 dBm Text: Preliminary Data Sheet October 2001 RA2860D 10 Gbits/s APD Receiver Description The RA2860D 10 Gbits/s receiver module incorporates a high-gain bandwidth APD and a preamplifier to provide exceptional dynamic range, including very high sensitivity and excellent overload.	Original	RA2860D DS01-257OPTO PIN APD OPTICAL DIODE receiver avalanche 1550 optics apd receiver apd 1550, sensitivity 30 dBm	PDF
APD 1300 2,5 GHz Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm Text: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current	Original	OC-192/STM-64 APD 1300 2,5 GHz JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm	PDF
FPD3R2 Abstract: photodiode germanium Fujitsu avalanche photodiode avalanche photodiode noise factor Text: FPD3R2KX/LX Germanium Avalanche Photodiode FEATURES • • • • Low dark current: 0.15\|j A High quantum efficiency: 75% at 1,3 jm Low Multiplied dark current: 10pA Storage & operating temperature: -40 to +85°c APPLICATIONS • High bit rate optical transmission system up to 1.0 Gbit.	OCR Scan		PDF
InGaAs Photodiode 1550nm Abstract: avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity 1550nm photodiode 5 Ghz FPD5W1KS avalanche photodiode ingaas ghz apd photodiode responsivity 1550nm photodiode 1550nm bandwidth Fujitsu avalanche photodiode photodiode 1550nm Text: FPD5W1KS InGaAs Avalanche Photodiode APPLICATIONS • 2.4 Gb/s optical transmission systems DESCRIPTION The FPD5W1KS is a wide bandwidth, high sensitivity InGaAs avalanche photodiode APD optimized for operation at 1550nm. This APD is designed for use in optical transmission systems	OCR Scan	1550nm. 1550nm InGaAs Photodiode 1550nm avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity 1550nm photodiode 5 Ghz FPD5W1KS avalanche photodiode ingaas ghz apd photodiode responsivity 1550nm photodiode 1550nm bandwidth Fujitsu avalanche photodiode photodiode 1550nm	PDF
FPD5W1KS Abstract: Fujitsu Quantum Devices FPD5W1KS avalanche photodiode avalanche photodiode 1550nm sensitivity InGaAs apd photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity single mode photodiode Avalanche photodiode avalanche photodiode noise factor Fujitsu avalanche photodiode Text: InGaAs Avalanche Photodiode FPD5W1KS FEATURES • • • • • • • • Multi-mode fiber pigtail 30dB Optical Return Loss ORL 30 \|jm active area APD High reliability planar structure with a guard ring based on advanced InGaAs/lnP material technology	OCR Scan	1550nm. FCSI0199M200 FPD5W1KS Fujitsu Quantum Devices FPD5W1KS avalanche photodiode avalanche photodiode 1550nm sensitivity InGaAs apd photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity single mode photodiode Avalanche photodiode avalanche photodiode noise factor Fujitsu avalanche photodiode	PDF

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PHOTODIODE AVALANCHE PHOTODIODE 40 GB Search Results

PHOTODIODE AVALANCHE PHOTODIODE 40 GB Datasheets Context Search

PIN photodiode responsivity 1550nm 1.1

PIN photodiode responsivity 1550nm 1.1

EMCORE APD

EMCORE APD

10G APD chip

InGaAs Epitaxx APD

InGaAs Epitaxx APD

APD 1550 nm bare die

InGaAs Epitaxx APD

InGaAs Epitaxx APD

InGaAs Epitaxx APD

JDSU ERM

receiver avalanche 1550 fiber 2.5

578XCX

Untitled

Untitled

ONET8551T

avalanche photodiode DWDM

C30902S

PIN APD OPTICAL DIODE

APD 1300 2,5 GHz

FPD3R2

InGaAs Photodiode 1550nm

FPD5W1KS