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    PHOTODIODES 190-1100 NM SILICON PIN Search Results

    PHOTODIODES 190-1100 NM SILICON PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1100CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet

    PHOTODIODES 190-1100 NM SILICON PIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G1qr

    Abstract: s4751 ir remote power meter cash drawer colorimeter
    Text: Selection Guide Features Spectral R esponse Range nm 200 400 600 800 10 00 M ajor Applications Ty p e No. Listed P age S 1 3 3 6 .S 1 3 3 7 Series 14, 15 S 1 2 2 6 ,S 1 227 Series 16, 17 18, 19 1200 Silicon Photodiodes 190 1100 190 U V to IR range, for precision photometry


    OCR Scan     		S2381 G1qr s4751 ir remote power meter cash drawer colorimeter PDF

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		KSPD0001E09 near IR photodiodes S8745-01 S8558 PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13 PDF

    United Detector Technology Photodiodes

    Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
    Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS


    OCR Scan     		T-41-53 T-41-53 850nm 850nm/1kHz 0V/50Q PIN-10D 050x0 P/N-125DPL PIN-220D, PIN-220DP United Detector Technology Photodiodes United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp PDF

    Photodiode, TO-5,

    Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
    Text: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package


    OCR Scan     		S1406 S1226, S1336 S1406-03/05 S1406-04/06 340nm, HPF262082F S-194 JAN/94 Photodiode, TO-5, ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 hamamatsu PIN TO5 PDF

    FIL-UV50

    Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


    Original     		diffuFIL-UV100 FIL-UV005 FIL-UV20 FIL-UV50 FIL-UV100 FIL-UV50 FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP PDF

    C1103-02

    Abstract: m5920 m59203 S3477-03
    Text: THERMOELECTRICALLY-COOLED SILICON PHOTODIODES S2592, S3477 SERIES HAM AM ATSU TECHNICAL DATA For low-light-level detection from UV to near IR. Highly stable operation. Hamamatsu offers therm oelectrical ly-cooled silicon photodiodes with a wide sensitivity range from UV to


    OCR Scan     		S2592, S3477 S2592 C1103-02) A3179 S-164-40 JUN/88 CR-2000 C1103-02 m5920 m59203 S3477-03 PDF

    Ultrafast Photodiode InGaAs

    Abstract: Ultrafast Photodetectors GMbh UPD-300 vogt UPD-200 ALPHALAS Photodiodes 190-1100 nM silicon PIN ultrafast photodiode UPD-200-SD UPD-70 IR2
    Text: ALPHALAS GmbH ULTRAFAST PHOTODETECTORS UPD FEATURES: - ultra high-speed operation - risetime below 40 picoseconds - wide spectral ranges - built-in biasing - long-life battery - coaxial photodiode coupling - compact design - high sensitivity APPLICATIONS:


    Original     		10-PS UPD-200-SD UPD-200 UPD-300 UPD-500 UPD-300 UPD-200-SP D-37085 Ultrafast Photodiode InGaAs Ultrafast Photodetectors GMbh vogt UPD-200 ALPHALAS Photodiodes 190-1100 nM silicon PIN ultrafast photodiode UPD-70 IR2 PDF

    C30902EH

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


    Original     		C30902 C30902EH C30921EH DTS0408 PDF

    C30902EH

    Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
    Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as


    Original     		C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz PDF

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


    Original     		PDF

    S5590

    Abstract: No abstract text available
    Text: 4 2 2 clfc.Qcl 0 0 Q 4 5R S Q77 Si PHOTODIODES WITH PRE-AMP S5590, S5591 SU Photodiode and Pre-amp integrated with feedback resistance and capacitance FEATURES • UV to near IR silicon photodiode optimized for pre­ cision photometry • Compact package with quartz window


    OCR Scan     		S5590, S5591 S5590: S5591: S5590 S5591 S-164 KSPD1005E04 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		SAE230NS SAE500NS SAE230NX PDF

    SAE500

    Abstract: SAE230NS SAE230NX SAE500NX rangefinding SAE230 SAE500NS
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		SAE230NS SAE500NS SAE230NX SAE500 SAE230NX SAE500NX rangefinding SAE230 PDF

    avalanche photodiode bias

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		SAE230NS SAE500NS SAE230NX avalanche photodiode bias PDF

    555D

    Abstract: colorimeter uv photodiode for 254nm UDT model UDT-455 UDT-451 UDT-555d UDT-5550 UDT-555UV UDT Sensors
    Text: 0 D T SEN SOR S INC 4TE D • 15 37 11 5 0 G G 1 57 5 DIM ■ UDTS T'^/'£7 PHOTOPS SERIES Hybrid Photodetector/Am plifier C o m b in a tio n s LOW-NOISE DETECTORS. UDT photodiodes em ploy state-of-the-art technology to provide rugged detectors with high-speed and low-noise for


    OCR Scan     		0001P72 UDT-451 UDT-020D, UDT-020UV UDT-451 UDT-455, UDT-455HS, UDT-455UHS, UDT-455UV, UDT-455UV/LN 555D colorimeter uv photodiode for 254nm UDT model UDT-455 UDT-555d UDT-5550 UDT-555UV UDT Sensors PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		SAE230NS SAE500NS SAE23 PDF

    United Detector Technology Photodiodes

    Abstract: UDT-500D 555D United Detector Technology udt 500d photodetector UDT-020D uv photodiode for 254nm UDT-555d 500D photodetectors UDT-450
    Text: UNITGD DETECTOR TECHNOLOGY A Division of ILC Technology, Inc. U N I T E » D E T E C T O R IDE D ' T 3 1 EHfl7 • □ □ □ ! □ ? ? S | r - w PHOTOPS" Hybrid - ù > '7 Photodetector/Amplifiers APPLICATIONS LOW-NOISE DETECTORS. ■ ■ ■ ■ ■ ■


    OCR Scan     		000107t T31EHÃ UDT-555D, UDT-555UV UDT-020D, UDT-020UV UDT-451 UDT-455, UDT-455HS, UDT-455UV United Detector Technology Photodiodes UDT-500D 555D United Detector Technology udt 500d photodetector UDT-020D uv photodiode for 254nm UDT-555d 500D photodetectors UDT-450 PDF

    Untitled

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		SAE230NS SAE500NS SAE23 PDF

    SAE500NX

    Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


    Original     		SAE230NS SAE500NS SAE230NX SAE500NX avalanche photodiode noise factor 0E-07 m8 smd rise time avalanche photodiode PDF

    Untitled

    Abstract: No abstract text available
    Text: OC-3/STM-1 Digital Receiver Module irn n n Model # 2803A T he 2803A Digital Receiver module is designed for Features: • Signal Detect Status use in transmission systems of medium to high ECL or PECL speed data communication applications. The receiver operates at the SONET OC-3 or STM-1 (155 Mb/s) data


    OCR Scan     		803A-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAE-Series NIR-Enhanced Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. The responsivity is optimised for 900 nm for use


    Original     		SAE230NS SAE500NS PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    led interface with 2803A

    Abstract: 2803A Ortel
    Text: OC-3/STIVI-1 Digital Receiver Module niuin Model # 2803A T he 2803A Digital Receiver module is designed for Features: • Signal Detect Status use in transmission systems of medium to high ECL o r PECL speed data com m unication applications. The receiver


    OCR Scan     		03A-A led interface with 2803A 2803A Ortel PDF