Untitled
Abstract: No abstract text available
Text: PS5132 Phototransistor for Optical Fiber Application Features φ5 type, Water clear epoxy Package Product features ・Through-hole Phototransistor ・Flat Lenz Type ・Photo Current : 6.3mA TYP. VCE=5V,Ee=10mW/cm2 ・No lead package ・RoHS compliant Peak Sensitivity Wavelength
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PS5132
10mW/cm2)
880nm
200pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: PS5132 Phototransistor for Optical Fiber Application Features φ5 type, Water clear epoxy Package Product features ・Through-hole Phototransistor ・Flat Lenz Type ・Photo Current : 6.3mA TYP. VCE=5V,Ee=10mW/cm2 ・No lead package ・RoHS compliant Peak Sensitivity Wavelength
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Original
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PS5132
10mW/cm2)
880nm
200pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: PS5132 Phototransistor for Optical Fiber Application Features φ5 type, Water clear epoxy Package Product features ・Through-hole Phototransistor ・Flat Lenz Type ・Photo Current : 6.3mA TYP. VCE=5V,Ee=10mW/cm2 ・No lead package ・RoHS compliant Peak Sensitivity Wavelength
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Original
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PS5132
10mW/cm2)
880nm
200pcs
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PDF
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Untitled
Abstract: No abstract text available
Text: KP3020 Series 8PIN PHOTOTRANSISTOR PHOTOCOUPLER cosmo Schematic Description 8 7 6 5 1 2 3 4 The KP3020 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector. They are packaged in an 8-pin DIP package and available in wide-lead spacing
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KP3020
5000Vrms
UL1577
69P12001
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camera module af
Abstract: photo interrupter module Reflective Optical Sensor camera phone
Text: ,0%&/4 * Photo Interrupter Reflective) KPI-3020R (Unit : mm) Dimensions Features • • • • • Miniature Leadfree Surface Mount Package Reflective with Phototransistor Output Reflow Soldering Optical Sensing Distance : 1.0mm RoHS compliant and Lead free package
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KPI-3020R
camera module af
photo interrupter module
Reflective Optical Sensor
camera phone
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ST-303
Abstract: ST-302
Text: Photo transistors KODENSHI ST-302・ST-303 DIMENSIONS Unit : mm The ST-302, 303 a high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking package, is compact, low profile and easy to mount. FEATURES •Low profile package •Compact •Low-cost
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ST-302ST-303
ST-302,
ST-302
ST-303
000lx
2856K
ST-303
ST-302
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foto transistor
Abstract: 302 phototransistor datasheet phototransistor 302 Q62702-P1623 Q62702-P1624 Q62702-P1625 Q62702-P1626 Q62702-P1627 Q62702-P1641 E F 302
Text: SFH 302 SFH 302 fet06017 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
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fet06017
Q62702-P1641
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
foto transistor
302 phototransistor datasheet
phototransistor 302
Q62702-P1623
Q62702-P1624
Q62702-P1625
Q62702-P1626
Q62702-P1627
Q62702-P1641
E F 302
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Untitled
Abstract: No abstract text available
Text: AU K CORP. Photo Interrupters Reflective KPI-3020R Description KPI-3020R is a very small reflect type of photo interrupter that has phototransistor output, thin and mini-size photo surface mount type of package. Features • Miniature Leadfree Surface Mount Package
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KPI-3020R
KPI-3020R
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camera phone
Abstract: KPI-3020R camera module af
Text: AUK CORP. Photo Interrupters Reflective KPI-3020R Description KPI-3020R is a very small reflect type of photo interrupter that has phototransistor output, thin and mini-size photo surface mount type of package. Features • Miniature Leadfree Surface Mount Package
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KPI-3020R
KPI-3020R
camera phone
camera module af
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foto transistor
Abstract: GETY6017 Q62702-P1641
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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Q627any
foto transistor
GETY6017
Q62702-P1641
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PDF
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SMD IC 3029
Abstract: No abstract text available
Text: TCMT1103-3029 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package Features • • • • • • • • Low profile package half pitch AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF
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TCMT1103-3029
2002/95/EC
2002/96/EC
UL1577,
E76222
08-Apr-05
SMD IC 3029
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PDF
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302 opto
Abstract: GET06017 Q62702-P1624 Q62702-P1625 Q62702-P1641 npn phototransistor
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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Q62702-P1641ppe.
GET06017
302 opto
GET06017
Q62702-P1624
Q62702-P1625
Q62702-P1641
npn phototransistor
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PDF
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TCMT1103
Abstract: TCMT1103-3029
Text: TCMT1103-3029 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, Single Channel, Half Pitch Mini-Flat Package Features • • • • • • • • Low profile package half pitch AC Isolation test voltage 3750 VRMS Low coupling capacitance of typical 0.3 pF
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Original
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TCMT1103-3029
2002/95/EC
2002/96/EC
UL1577,
E76222
18-Jul-08
TCMT1103
TCMT1103-3029
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • TO-18, Bodenplatte, klares Epoxy-Gießharz, mit Basisanschluß • Gruppiert lieferbar
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GETY6017
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OPL126A
Abstract: No abstract text available
Text: Issued July 1985 F4866 High voltage opto-isolator Stocknumber 302-148 The RS OPL126A opto-isolator consists of a GaAsP light emitting diode optically coupled to an NPN silicon phototransistor. The form of construction provides 10kV isolation between input and output, with a minimum
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F4866
OPL126A
812252U
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ps3322
Abstract: No abstract text available
Text: PS3322 Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・Photo Current : 3.6mA TYP. VCE=5V,Ee=1mW/cm2 ・Narrow Distribution ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength
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PS3322
880nm
200pcs
ps3322
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PHOTO SENSORS
Abstract: diagram ta 306 ic 307 ex photo sensor 700 T55L photo resistance
Text: O K I electronic com ponents T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
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b72M240
b724H40
P4240
b72H2M0
b7E4E40
0010T2Ã
PHOTO SENSORS
diagram ta 306
ic 307 ex
photo sensor 700
T55L
photo resistance
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Untitled
Abstract: No abstract text available
Text: O K I electronic components T55L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T55L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.
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OCR Scan
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b72M240
L724240
b72424Q
b72M2M0
b7E4E40
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PDF
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c217
Abstract: MOC215
Text: Tem ic MOC215-217 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists o f a phototransistor optically coupled to a gallium arsenide infrared emitting diode in
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OCR Scan
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MOC215-217
MOC215
MOC216
MOC217
96M7M)
14-Jun-96
14-Jun-%
c217
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PDF
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be 303
Abstract: No abstract text available
Text: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2.
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SL5511
SL5511
C96-551
be 303
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PDF
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MOC211
Abstract: OC211 OC212M
Text: Temic MOC211-213 S e m i c o n d u c t o r s Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The M O C series consists o f a phototransistor optically coupled to a gallium arsenide infrared-em itting diode in
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OCR Scan
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MOC211-213
MOC211
eth10.
14-Jun-96
OC211
OC212M
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PDF
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Untitled
Abstract: No abstract text available
Text: n iC R O P AC INDUSTRIES INC 42E D SB b l l E b H Q □□□0014 T B9 MPI SILICON PHOTOTRANSISTOR “ PIGTAIL” 61053 TYPE GS 3020 G E N E R A L DESCRIPTION MINIATURE LIGHT SENSOR WITH NARROW ANGULAR RESPONSE GLASS/METAL WELDED HERMETIC PACKAGE Mii 61053 is an N-P-N Silicon Phototransistor in a lensed coaxial package designed to be mounted in a single-clad
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OCR Scan
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MIL-S-19500.
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PDF
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QAA27
Abstract: sfh siemens
Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 302 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Features Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm
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DGflfl272
QAA27
sfh siemens
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PDF
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3020 transistor
Abstract: No abstract text available
Text: SILICON PHOTOTRANSISTOR “PIGTAIL” 61053 TYPE GS 3020 OPTOELECTRONIC PRODUCTS DIVISION GENERAL DESCRIPTION MINIATURE LIGHT SENSOR WITH NARROW ANGULAR RESPONSE GLASS/METAL WELDED HERMETIC PACKAGED Mii 61053 is an N-P-N Planar Silicon Photodarlington Transistor in a lensed coaxial package
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OCR Scan
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MIL-S-19500.
3020 transistor
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PDF
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