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    PHOTOTRANSISTOR DIE WAFER Search Results

    PHOTOTRANSISTOR DIE WAFER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADUC7023BCBZ62I-R7 Analog Devices ADuC7023 in Wafer-Level CSP Visit Analog Devices Buy
    HMC8410CHIPS-SX Analog Devices Die Sales Visit Analog Devices Buy
    HMC8402-SX Analog Devices Die Sales- 2 die pack Visit Analog Devices Buy
    HMC8401-SX Analog Devices Die Sales- 2 die pack Visit Analog Devices Buy
    ADAU1850BCBZRL Analog Devices 28-Bump Wafer Level Chip Scale Visit Analog Devices Buy

    PHOTOTRANSISTOR DIE WAFER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OPTOLAB

    Abstract: No abstract text available
    Text: OL 8110 Dual Emitter Phototransistor Mechanical Specifications • • • • Chip size: 508µm x 690 µm +/- 20 µm Chip thickness: 178 µm - 254 µ Active area: 200 µm x 400 µ Back side (collector) gol metalized for conductive epoxy die-attach Electrical Specifications (TA = 25°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 18-Jul-08

    T1070P

    Abstract: FVOV6870 MIL-HDBK-263 81119
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 18-Jul-08 FVOV6870 MIL-HDBK-263 81119

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: T1070P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25 • High photo sensitivity


    Original     		PDF T1070P 2002/95/EC 2002/96/EC T1070P 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    FVOV6870

    Abstract: MIL-HDBK-263 silicon npn phototransistor phototransistor die
    Text: T5090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity E • Suitable for visible and near infrared radiation


    Original     		PDF T5090P 2002/95/EC 2002/96/EC T5090P 18-Jul-08 FVOV6870 MIL-HDBK-263 silicon npn phototransistor phototransistor die

    Untitled

    Abstract: No abstract text available
    Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: wafer • Package form: wafer • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF T5096P 2002/95/EC 2002/96/EC T5096P 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25


    Original     		PDF T1070P T1070P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1070P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.72 x 0.72 x 0.22 • Wafer diameter (in mm): 100 • Radiant sensitive area (in mm2): 0.25


    Original     		PDF T1070P T1070P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P 2002/95/EC 2002/96/EC T1090P 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P 2002/95/EC 2002/96/EC T1090P 18-Jul-08

    T1090P

    Abstract: FVOV6870 MIL-HDBK-263
    Text: T1090P Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity E • High radiant sensitivity B • Suitable for visible and near infrared radiation


    Original     		PDF T1090P 2002/95/EC 2002/96/EC T1090P 11-Mar-11 FVOV6870 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text:  !" incremental encoder chip 1.2 mm EEEEEEEEEEEEEEEECFCA93298C OIT3C consists in three unique silicon phototransistors. They have a common collector and every emitter is available on a pad. The pitch of the silicon arrays is 1.2 mm, while the component electrical pitch is 1.27 mm.


    Original     		PDF 300-900nm. 030mm 12234556667832897A8B5C

    Untitled

    Abstract: No abstract text available
    Text: T1090P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.53 x 0.53 x 0.185 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF T1090P T1090P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES E: emitter • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size


    Original     		PDF T5096P T5096P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T5096P www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor E: emitter FEATURES • Package type: chip • Package form: chip • Dimensions L x W x H in mm : 0.39 x 0.39 x 0.185 • High photo sensitivity • High collector current E • Small size


    Original     		PDF T5096P T5096P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    ADP8860

    Abstract: DL17 JESD51-9 MO-220-VGGD-1 ADP8860ACPZ-R7 4558 PIN input id 4558 equivalent photo sensor pin diagram photosensor driver diagram
    Text: Charge Pump, 7-Channel Smart LED Driver with I2C Interface ADP8860 FEATURES VALS OPTIONAL PHOTOSENSOR VOUT PHOTOSENSOR 0.1µF D1 D3 VIN D2 E3 D3 D4 E4 D5 D4 B4 B3 C3 D6/ CMP_IN2 A3 1µF 1µF E1 VDDIO SDA A1 ADP8860 C1 C2 VDDIO B1 SCL E2 B2 VDDIO nINT VOUT


    Original     		PDF ADP8860 090408-B ADP8860ACBZ-R7 ADP8860ACPZ-R71 20-Ball 20-Lead CB-20-6 CP-20-4 ADP8860 DL17 JESD51-9 MO-220-VGGD-1 ADP8860ACPZ-R7 4558 PIN input id 4558 equivalent photo sensor pin diagram photosensor driver diagram

    PI3033

    Abstract: 200DPI AD8051 EL2044 PI3033B phototransistor die WAFER cis sensor cis Linear Image Sensor
    Text: Division of Semiconductor REVISION NUMBER: REV B PAGES: Page 1 of 13 DATE: 03/18/05 PI3033B Contact Image Sensor Preliminary Data Sheet Preliminary PI3033B datasheet PI3033B 200DPI CIS Sensor Chip Engineering Data Sheet Description: Peripheral Imaging Corporation PI3033B CIS, Contact Image Sensor, chip is a 200 dot per


    Original     		PDF PI3033B PI3033B 200DPI PI3033 AD8051 EL2044 phototransistor die WAFER cis sensor cis Linear Image Sensor

    brightness control of white leds using scr

    Abstract: control light intensity using SCR 13842 pwm
    Text: Charge-Pump, Parallel Backlight Driver with Image Content PWM Input ADP8870 Data Sheet FEATURES APPLICATIONS Charge pump with automatic gain selection of 1x, 1.5×, and 2× for maximum efficiency Two high accuracy ±5% phototransistor inputs for automated ambient light sensing (ALS)


    Original     		PDF ADP8870 061609-B CB-20-7 CP-20-10 8-02-2012-A ADP8870 D08829-0-8/12 brightness control of white leds using scr control light intensity using SCR 13842 pwm

    cis Linear Image Sensor

    Abstract: AD8051 AMIS-720233-B EL2044 PI3033B amis Contact Image Sensor Contact Image Sensor Color CIS line sensor
    Text: AMIS-720233-B: Contact Image Sensor Data Sheet 1.0 General Description The AMIS-720233-B PI3033B contact image sensor (CIS) chip is a 200 dot per inch (dpi) resolution, linear array image sensor chip. The sensor chip is processed with AMI Semiconductor’s proprietary CMOS image sensing technology. Designed for cascading multiple


    Original     		PDF AMIS-720233-B: AMIS-720233-B PI3033B) M-20567-001 cis Linear Image Sensor AD8051 AMIS-720233-B EL2044 PI3033B amis Contact Image Sensor Contact Image Sensor Color CIS line sensor

    WLCSP chip attach

    Abstract: ADP8863 soft start circuit 555 timer ADP8860 ADP8861 JESD51-9 NXP 4772 V20S
    Text: Charge Pump, 7-Channel Fun Lighting LED Driver ADP8863 FEATURES TYPICAL OPERATING CIRCUIT VALS PHOTO SENSOR D1 D2 D3 D4 D5 D6 D7 CMP_IN 0.1µF VIN CIN 1µF VOUT COUT 1µF VDDIO C1+ ADP8863 nRST C1– nINT C1 1µF C2+ SDA C2– SCL GND1 GND2 C2 1µF 08392-001


    Original     		PDF ADP8863 o63ACPZ-R7 ADP8863ACBZ-R7 ADP8863DBCP-EVALZ ADP886XMB1-EVALZ 20-Lead 20-Ball CP-20-10 CB-20-6 WLCSP chip attach ADP8863 soft start circuit 555 timer ADP8860 ADP8861 JESD51-9 NXP 4772 V20S

    pi3042

    Abstract: diode U3d AMIS-720442-A PI3042A Contact Image Sensor
    Text: AMIS-720442-A: 400dpi Contact Image Sensor Data Sheet 1.0 Description AMI Semiconductor’s AMIS-720442-A PI3042A contact image sensor (CIS) is a 400 dots per inch (dpi) linear array image sensor chip. The sensor chip is processed using a CMOS image sensing technology, belonging to AMIS. Designed for cascading multiple


    Original     		PDF AMIS-720442-A: 400dpi AMIS-720442-A PI3042A) M-20571-001 pi3042 diode U3d AMIS-720442-A PI3042A Contact Image Sensor

    TCD2964BFG

    Abstract: TCD2716DG TCD1254GFG tcd2563bfg TCD1103GFG TCD2964 tcd2564dg TCD2712DG tcd2563 TCD2717BFG
    Text: SEMICONDUCTOR GENERAL CATALOG Sensors/Image Pickup Devices Photosensors Image Sensors Magnetic Sensors 1 2009-8 SCE0004I Photosensors Infrared LEDs and Visible LEDs for Sensor Light Sources Electrical/Optical Characteristics Ta = 25°C Part Number with Rank


    Original     		PDF SCE0004I O-18CAN TCD2964BFG TCD2716DG TCD1254GFG tcd2563bfg TCD1103GFG TCD2964 tcd2564dg TCD2712DG tcd2563 TCD2717BFG

    line cmos image sensor

    Abstract: tds sensor cis sensor EL2044 PI3012A Scanner CMOS imaging sensors
    Text: Peripheral Imaging Corporation PI3012A 300DPI CIS Sensor Chip Engineering Data Sheet Description: Peripheral Imaging Corporation PI3012A CIS sensor chip is a 300 dot per inch resolution linear array image sensor chip which utilizes PIC’s proprietary CMOS Image Sensing


    Original     		PDF PI3012A 300DPI PI3012A PI3012A, line cmos image sensor tds sensor cis sensor EL2044 Scanner CMOS imaging sensors