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    PHOTOTRANSISTOR PEAK WAVE SENSITIVITY 600 NM Search Results

    PHOTOTRANSISTOR PEAK WAVE SENSITIVITY 600 NM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    WAVEVSN BRD 5.1/NOPB Texas Instruments WaveVision 5 Data Capture Board Version 5.1 Visit Texas Instruments Buy
    GSB191363F1C9HR Amphenol Communications Solutions USB 2.0, Type A, Receptacle, Upright, 4 Pins, Shell with Nickel Plating, 30u\\ Gold, Dip4.6mm, Shell Forklock ,Black High Temperature Housing, Wave Soldering only, Tray Packaging Visit Amphenol Communications Solutions

    PHOTOTRANSISTOR PEAK WAVE SENSITIVITY 600 NM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fototransistor

    Abstract: phototransistor peak 550 nm fototransistor led
    Text: 2009-03-05 SMT Multi TOPLED SMT Multi TOPLED Version 1.0 SFH 331 Features: Besondere Merkmale: • SMT package with red emitter 635 nm and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately


    Original     		331-JK Q65110A2821 D-93055 fototransistor phototransistor peak 550 nm fototransistor led PDF

    Untitled

    Abstract: No abstract text available
    Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PS3G01X Through-hole Phototransistor/φ3 Type Features Package Product features φ3 type, Water clear epoxy ・ Photo Current : 1.0mA TYP. VCE=5V,Ee=1mW/cm2 ・ Dome Lens ・ Lead–free soldering compatible ・ RoHS compliant Peak Sensitivity Wavelength


    Original     		PS3G01X 880nm 200pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: 3mm Photodiode PD204-6B Features •Fast response time •High photo sensitivity •Small junction capacitance •Pb free •This product itself will remain within RoHS compliant version. Description PD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φ plastic package.


    Original     		PD204-6B PD204-6B DPD-0000160 DPD-0000160 PDF

    GP1A101C2KSF

    Abstract: pc3sh13 PC3HU7 GP1A054 GP1A173 GP1A173LCS2F GP2Y0A60 GP1A204HCS0 GP1A054RDKLF GP1A057SGKLF
    Text: OPTO PHOTOCOUPLER LINEUP • Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage, etc. PC35x series/PC451J00000F 56 Low input current PC367NJ0000F


    Original     		PC35x series/PC451J00000F PC367NJ0000F PC354NJ0000F PC364NJ0000F PC355NJ0000F PC365NJ0000F PC3H71xNIP0F PC4H510NIP0F PC3H3J00000F/PC3H4J00000F GP1A101C2KSF pc3sh13 PC3HU7 GP1A054 GP1A173 GP1A173LCS2F GP2Y0A60 GP1A204HCS0 GP1A054RDKLF GP1A057SGKLF PDF

    IRM0101

    Abstract: IRM0208-A538 L327EIR1BC L-314EIR1C L-31ROPT1C L-31ROPT1D1 L-31ROPT1D2 L-31ROPT1XX L-32ROPT1D1 L-32XOPT1XX
    Text: PL- IRM0101- 3 RECEIVER MODULE ABSOLUTE MAXIMUN RATING: Ta=25ºC PARAMETER Test Conditions Symbol Value Supply Voltage - Vcc 4.5~5.5 V Output Voltage - Vout 4.5~5.5 V Output Current - lo 5 mA Junction Temperature - Ti 100 ºC Storage Temperature Range - Tstg


    Original     		IRM0101- L-514EIR1BC L-515EIR1BC L-516EIR1BC L-517EIR1BC L-518EIR1BC L-51AEIR1BC L-514CIR1BC 100mA IRM0101 IRM0208-A538 L327EIR1BC L-314EIR1C L-31ROPT1C L-31ROPT1D1 L-31ROPT1D2 L-31ROPT1XX L-32ROPT1D1 L-32XOPT1XX PDF

    Untitled

    Abstract: No abstract text available
    Text: PS3G01X Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・ Photo Current : 1.0mA TYP. VCE=5V,Ee=1mW/cm2 ・ Dome Lens ・ Lead–free soldering compatible ・ RoHS compliant Peak Sensitivity Wavelength


    Original     		PS3G01X 880nm 200pcs PDF

    Untitled

    Abstract: No abstract text available
    Text: PS3G01X Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・ Photo Current : 1.0mA TYP. VCE=5V,Ee=1mW/cm2 ・ Dome Lens ・ Lead–free soldering compatible ・ RoHS compliant Peak Sensitivity Wavelength


    Original     		PS3G01X 880nm 200pcs PDF

    phototransistor peak wave sensitivity 600 nm

    Abstract: mm glass lens phototransistor glass lens phototransistor kpt801h
    Text: Si Phototransistor KPT801HB KPT801HB H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens or visible-cut black epoxy lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator


    Original     		KPT801HB phototransistor peak wave sensitivity 600 nm mm glass lens phototransistor glass lens phototransistor kpt801h PDF

    IRM0101

    Abstract: irm01 L327EIR1BC IRM0101-1 L-31ROPT1XX L-32XOPT1XX L-514EIR1C IRM0208-A538 L-31ROPT1C L-SC1R9PD1
    Text: PL- IRM0101-1 RECEIVER MODULE ABSOLUTE MAXIMUN RATING: Ta=25ºC PARAMETER Test Conditions Symbol Value Supply Voltage - Vcc 3~5 V Output Voltage - Vout 3~5 V Output Current - lo 2.5 mA Junction Temperature - Ti 100 ºC Storage Temperature Range - Tstg -25


    Original     		IRM0101-1 L-514EIR1BC L-515EIR1BC L-516EIR1BC L-517EIR1BC L-518EIR1BC L-51AEIR1BC L-514CIR1BC 100mA IRM0101 irm01 L327EIR1BC L-31ROPT1XX L-32XOPT1XX L-514EIR1C IRM0208-A538 L-31ROPT1C L-SC1R9PD1 PDF

    mm glass lens phototransistor

    Abstract: phototransistor peak wave sensitivity 600 nm kpt801h
    Text: Si Phototransistor KPT801H KPT801H H1 ø4.65±0.1 Glass lens 4.5 • NPN phototransistor packaged in a 2 leads TO-18 • Glass lens • Low leak current 6.6 max Features • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors


    Original     		KPT801H mm glass lens phototransistor phototransistor peak wave sensitivity 600 nm kpt801h PDF

    phototransistor peak wave sensitivity 600 nm

    Abstract: C8060
    Text: Si Phototransistor KPT801C KPT801C Features • NPN phototransistor C7 +0.3 ø2.96 –0.1 Transparent epoxy resin Black Ceramic 2.0 • Low leak current +0.3 3.2 –0.2 • Ceramic package • Optical switches ø0.45 • Optical encoders ø0.3 15.5±1.0 Applications


    Original     		KPT801C phototransistor peak wave sensitivity 600 nm C8060 PDF

    phototransistor peak wave sensitivity 600 nm

    Abstract: KPT08
    Text: Si Phototransistor KPT081M31 KPT081M31 Features φ3.8±0.2 • NPN phototransistor • Transparent epoxy potting • Low leak current φ3.0±0.2 24MIN 1.5MAX 5.3±0.5 • Optical switches • Optical encoders • Photo-isolator • Camera stroboscopes • Infrared sensors


    Original     		KPT081M31 24MIN phototransistor peak wave sensitivity 600 nm KPT08 PDF

    Q62702-P5209

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität • SMT-Bauform ohne Basisanschluß, geeignet


    Original     		Q62702-P5043 Q62702-P5209 GEOY6982 PDF

    phototransistor sensitive to red light

    Abstract: SML-612UT phototransistor sensitive to green light SML-612 smd ic 611 SML612YT 0603 led red, green, white phototransistor sensitive to yellow light SML-710MW SML-310F
    Text: Opto product solutions www.rohm.co.uk Surface Mount Type Illuminance Sensor RPM-075PT Items Symbol Min. Ave. Max. Unit Condition mA µA µA nm VCE=5V, E950=500 Ix VCE=3V, E600=50 Ix VCE=10V Light current 1 Light current 2 Ic 950 Ic 600 0.25 11 0.4 19 0.6 29


    Original     		RPM-075PT phototransistor sensitive to red light SML-612UT phototransistor sensitive to green light SML-612 smd ic 611 SML612YT 0603 led red, green, white phototransistor sensitive to yellow light SML-710MW SML-310F PDF

    J-STD-020D

    Abstract: VSML3710 phototransistor peak wave sensitivity 600 nm VEMT4700-GS08
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		VEMT4700 VSML3710 J-STD-020 VEMT4700 18-Jul-08 J-STD-020D VSML3710 phototransistor peak wave sensitivity 600 nm VEMT4700-GS08 PDF

    PC1231xNSZ0F

    Abstract: PC3HU7 PC 870 SHARP opto coupler GP2Y0A41SK0F GP2A222HCKA GP1S195HCPSF Sharp IS471FE GP1UX31QS pc3sh13 gp1a047rbzlf
    Text: ✱❆▲❊❄❆_✲.❃ook ✷❂❈❆ ✩✪ ✾❆❅n❆•❅❂❖, J❑l❖ ✤✫, ✥✣✣✪ ✤:✣✦ ✷M OPTO PHOTOCOUPLER INDEX TREE ■ Photocoupler Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series


    Original     		PC35x series/PC451J00000F PC367NJ0000F PC354NJ0000F PC364NJ0000F PC3H71xNIP0F PC4H510NIP0F PC365NJ0000F leX31QS) GP1UD28YK00F PC1231xNSZ0F PC3HU7 PC 870 SHARP opto coupler GP2Y0A41SK0F GP2A222HCKA GP1S195HCPSF Sharp IS471FE GP1UX31QS pc3sh13 gp1a047rbzlf PDF

    Untitled

    Abstract: No abstract text available
    Text: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		VEMT4700 VSML3710 VEMT4700 J-STD-020 18-Jul-08 PDF

    phototransistor 650 nm

    Abstract: phototransistor peak wave sensitivity 600 nm fototransistor led
    Text: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector Lead Pb Free Product - RoHS Compliant SFH 7225 SFH 7226 Wesentliche Merkmale Features • Anzeigefunktion kann durch eingebauten Fototransistor überwacht werden


    Original     		PDF

    ta 7226

    Abstract: Soldering profile S_6001
    Text: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector Lead Pb Free Product - RoHS Compliant SFH 7225 SFH 7226 Wesentliche Merkmale Features • Anzeigefunktion kann durch eingebauten Fototransistor überwacht werden


    Original     		PDF

    Q62702-P5043

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Multi TOPLED mit LED und Fototransistor-Detektor Multi TOPLED with LED and Phototransistor-Detector Lead Pb Free Product - RoHS Compliant SFH 7225 SFH 7226 SFH 7226: Nicht für Neuentwicklungen / Not for new designs Wesentliche Merkmale Features • Anzeigefunktion kann durch eingebauten


    Original     		72ice PDF

    RPI-2501

    Abstract: RPI-2500 ROHM RPI-2500 IR phototransistor sensor RPI-151 RPR-220PC30N SIM-041ST IR phototransistor SIM-031ST ROHM RPI-151
    Text: Innovations Embedded Optical Sensors  Remote ROHM MarketingUSA Controls  Copiers  Cell Phones Selection Guide Optical Sensors from ROHM Semiconductor ROHM Infrared Optical Sensors operate in the near infrared range 700nm - 1400nm of the electromagnetic


    Original     		700nm 1400nm) CNA11003 RPI-2501 RPI-2500 ROHM RPI-2500 IR phototransistor sensor RPI-151 RPR-220PC30N SIM-041ST IR phototransistor SIM-031ST ROHM RPI-151 PDF

    Q62702-P5043

    Abstract: ee 3201 IC 3201 Q62702-P5209
    Text: NPN-Silizium-Fototransistor im SMT-Gehäuse Silicon NPN Phototransistor in SMT Package SFH 3201 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm • Hohe Linearität


    Original     		PDF