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    PHOTOTRANSISTOR WITH BASE EMITTER Search Results

    PHOTOTRANSISTOR WITH BASE EMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRJ43DR7LV224KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV474KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV334KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ43QR7LV154KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd

    PHOTOTRANSISTOR WITH BASE EMITTER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JISC0301

    Abstract: Phototransistor with base emitter
    Text: 8H A RR Schematic Drawings 2-4 Schematic Drawings Type Schematic Drawing Light Emitting Diode XX Photodiode A o- X X Phototransistor Without base terminal Photocoupler (With base terminal ) Photocoupler (Without base terminal) 98 -o K x Phototransistor


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    PDF

    QEE213

    Abstract: QSE243
    Text: QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor Features Description • NPN Silicon Phototransistor with internal base-emitter resistance ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Clear Plastic Package ■ Matching Emitter: QEE213


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    QSE243 QEE213 QSE243 QEE213 PDF

    Untitled

    Abstract: No abstract text available
    Text: O ptoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T he H U G series consists o f a gallium arsenide, infrared emitting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to


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    H11G3 300jusec, PDF

    pin diagram of IC 7402

    Abstract: TCLT11 TCLT1100 TCLT1101 TCLT1102 TCLT1103 TCLT1105 TCLT1106 TCLT1107 TCLT1108
    Text: TCLT11. Series Vishay Semiconductors Optocoupler with Phototransistor Output, Base connected Description The TCLT11. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 5-lead SO6L package. The elements are mounted on one leadframe using a


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    TCLT11. D-74025 pin diagram of IC 7402 TCLT11 TCLT1100 TCLT1101 TCLT1102 TCLT1103 TCLT1105 TCLT1106 TCLT1107 TCLT1108 PDF

    Untitled

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to


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    H11G3 PDF

    pin diagram of IC 7402

    Abstract: IC 7402 pin diagram TCLT1102 TCLT1105 IC 7402 TCLT11 TCLT1100 TCLT1101 TCLT1103 TCLT1106
    Text: TCLT11. Series Vishay Telefunken Optocoupler with Phototransistor Output, Base connected Description The TCLT11. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 5-lead SO6L package. The elements are mounted on one leadframe using a


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    TCLT11. D-74025 pin diagram of IC 7402 IC 7402 pin diagram TCLT1102 TCLT1105 IC 7402 TCLT11 TCLT1100 TCLT1101 TCLT1103 TCLT1106 PDF

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    Abstract: No abstract text available
    Text: TCLT11. Series Vishay Telefunken Optocoupler with Phototransistor Output, Base connected Description The TCLT11. Series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 5-lead SO6L package. The elements are mounted on one leadframe using a


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    TCLT11. D-74025 PDF

    CNW11AV-1

    Abstract: CNW11AV-2 SICK DME 5000 CNW11AV-3
    Text: HIGH VOLTAGE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNW11AV-1 CNW11AV-2 CNW11AV-3 DESCRIPTION The CNW11AV series are high voltage optocouplers in a wide body dual-in-line package DIP . Each optocoupler consists of a GaAs infrared emitter optically coupled to a silicon npn phototransistor with the base connected.


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    CNW11AV-1 CNW11AV-2 CNW11AV-3 CNW11AV DS300398 CNW11AV-1 CNW11AV-2 SICK DME 5000 CNW11AV-3 PDF

    4n25 application note

    Abstract: 4N26-X007 4N27 application note 4N25 applications 4n25 optocoupler Control 4N25 4N25 4N25-X006 4N26 4N27
    Text: 4N25/4N26/4N27/4N28 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection FEATURES A 1 6 B C 2 5 C NC 3 4 E i179004 i179004 DESCRIPTION The 4N25 family is an Industry Standard Single Channel Phototransistor Coupler.This family includes the


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    4N25/4N26/4N27/4N28 i179004 4N25/4N26/4N27/4N28. VDE0884 08-Apr-05 4n25 application note 4N26-X007 4N27 application note 4N25 applications 4n25 optocoupler Control 4N25 4N25 4N25-X006 4N26 4N27 PDF

    SL5500 SL5501 SL5511

    Abstract: sl5500 SL5511 SL5501
    Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS SL5500 SL5501 SL5511 DESCRIPTION The SL5500, SL5501 and SL5511 are optically coupled isolators each consisting of an infrared emitting GaAs diode and a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-in-line


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    SL5500 SL5501 SL5511 SL5500, SL5501 SL5511 E90700) SL5500 DS300403 SL5500 SL5501 SL5511 PDF

    BPW13A

    Abstract: BPW13B BPW13C BPW13 950NM
    Text: BPW 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal


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    BPW13 D-74025 BPW13A BPW13B BPW13C 950NM PDF

    KPT811

    Abstract: KPT811H TF 5367
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Si Phototransistor KPT811H Features • NPN phototransistor packaged in a 3 leads TO-18 for the base connection • Glass lens • Low leak current Dimensions (unit: mm) Applications • Optical switches


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    2002/95/EC) KPT811H 0905/KPT811H) KPT811 KPT811H TF 5367 PDF

    IL256AT

    Abstract: RS481A
    Text: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256AT is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse


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    IL256AT i179025 IL256AT 11-Mar-11 RS481A PDF

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    Abstract: No abstract text available
    Text: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256AT is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse


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    IL256AT RS481A) 2002/95/EC 2002/96/EC i179025 IL256AT 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    IL256AT

    Abstract: RS481A
    Text: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256AT is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse


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    IL256AT i179025 IL256AT 18-Jul-08 RS481A PDF

    Untitled

    Abstract: No abstract text available
    Text: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256AT is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in reverse


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    IL256AT RS481A) 2002/95/EC 2002/96/EC i179025 IL256AT 08-Apr-05 PDF

    CNX36U

    Abstract: 3 pin phototransistor CNX39U CNX35U CNX38U
    Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX35U CNX36U CNX38U CNX39U DESCRIPTION The CNX35U, CNX36U CNX38U and CNX39U are optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-inline packages DIP .


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    CNX35U CNX36U CNX38U CNX39U CNX35U, CNX38U CNX39U E90700) 3 pin phototransistor PDF

    phototransistor 3 pin

    Abstract: t-1 ir phototransistor CNX36U all ic datasheet in one pdf file dual Phototransistor CNX35U CNX38U CNX39U
    Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX35U CNX36U CNX38U CNX39U DESCRIPTION The CNX35U, CNX36U CNX38U and CNX39U are optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-inline packages DIP .


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    CNX35U CNX36U CNX38U CNX39U CNX35U, CNX38U CNX39U E90700) phototransistor 3 pin t-1 ir phototransistor all ic datasheet in one pdf file dual Phototransistor PDF

    CNX36U

    Abstract: CNX35U CNX38U CNX39U
    Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX35U CNX36U CNX38U CNX39U DESCRIPTION The CNX35U, CNX36U CNX38U and CNX39U are optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-inline packages DIP .


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    CNX35U CNX36U CNX38U CNX39U CNX35U, CNX38U CNX39U E90700) PDF

    pc353

    Abstract: D2006 E195 E64380 PC353TJ0000F sharp rohs marking
    Text: PC353TJ0000F PC353TJ0000F Mini-flat Package Includes Base Terminal Connection Photocoupler • Description ■ Agency approvals/Compliance PC353TJ0000F contains an IRED optically coupled to a phototransistor. It is packaged in a 5-pin Mini-flat with Base terminal.


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    PC353TJ0000F PC353TJ0000F UL1577 E64380 PC353) D2-A00402EN pc353 D2006 E195 E64380 sharp rohs marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BP103 Silicon NPN Phototransistor Characteristics TA=25°C FEATU R ES • Especially suitable for applications from 420nm to1130nm • High linearity • TO-18, base plate, transparent epoxy resin Ians, with base connection • Spectral sensitivity selections


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    BP103 420nm to1130nm BP103 EM0t59a PCE250= PDF

    BPW13A

    Abstract: BPW13B K950 BPW13C BPW13 Telefunken Phototransistor npn phototransistor bpw 104 lm 1510
    Text: T e m ic bpw 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard T O -18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal


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    BPW13 950nm fiT20CHb GG11S11 BPW13A BPW13B K950 BPW13C Telefunken Phototransistor npn phototransistor bpw 104 lm 1510 PDF

    BPW76A

    Abstract: BPW76 BPW76B
    Text: BPW76 Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control.


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    BPW76 BPW76 D-74025 15-Jul-96 BPW76A BPW76B PDF

    IEC60747-5-2

    Abstract: IL256A IL256AT RS481A VDE0884
    Text: IL256AT Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, With Base Connection FEATURES A/C 1 8 NC C/A 2 7 B NC 3 6 C NC 4 5 E i179025 DESCRIPTION The IL256A is an AC input phototransistor optocoupler. The device consists of two infrared


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    IL256AT i179025 IL256A 08-Apr-05 IEC60747-5-2 IL256AT RS481A VDE0884 PDF