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    PIN BEAM LEAD DIOD Search Results

    PIN BEAM LEAD DIOD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PIN BEAM LEAD DIOD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Ultrasonic welding circuit

    Abstract: DIODE 4005 hpnd pin 0.01 pF handling of beam lead diodes beam lead PIN diode Ablestik diode led ir Led-Diode data phase shift resistance welding HPND4005
    Text: HPND- 4005 Beam Lead PIN Diode Data Sheet Description Features The HPND-4005 planar beam lead PIN diode is ­constructed to offer exceptional lead strength while achieving excellent elec­tri­cal performance at high ­frequencies. High beam strength offers users superior


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    PDF HPND-4005 5965-8877E AV01-0593EN Ultrasonic welding circuit DIODE 4005 hpnd pin 0.01 pF handling of beam lead diodes beam lead PIN diode Ablestik diode led ir Led-Diode data phase shift resistance welding HPND4005

    MPND4005

    Abstract: ir 0218 HPND-4005 beam lead pin diode
    Text: Planar Beam Lead PIN Diode For High Isolation Description Features Metelics’ Planar Beam Lead PIN Diodes provide low microwave capacitance with exceptional lead strength. The high beam strength offers the users superior assemply yield. The Oxide / Nitride / Polyimide Passivation offers


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    PDF HPND-4005 MPND4005-B1 MPND4005-B16 A17005 MPND4005 ir 0218 beam lead pin diode

    MPN1000-12

    Abstract: MicroMetrics pin diode MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12
    Text: Control Devices Control Devices: MPN 1000 Series Beam Lead PIN Diodes Description The MicroMetrics MPN 1000 series Beam Lead PIN diodes features a unique glass and beam construction which allows for mechanical strength and stability during assembly. They are


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    PDF MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12 MPN1101-12 MPN1000-12 MicroMetrics pin diode MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12

    MBP1030B11

    Abstract: MBP1036B11 MBP-1030 MBP2030 MBP2030B11 MBP1035B11 MBP1036-B1 mbp1035 MBP2034B11 MICROWAVE TEST FIXTURE
    Text: Mesa Beam Lead PIN Diodes Description Features Metelics’ Beam Lead PIN diodes provide low microwave capacitance and fast switching performance. They are ideal for use in broadband high speed multi-throw switches as well as phase shifters, modulators and attenuators.


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    PDF MBP1030-B1 MBP1033-B1 MBP1034-B1 MBP1035-B1 A17004 MBP1030B11 MBP1036B11 MBP-1030 MBP2030 MBP2030B11 MBP1035B11 MBP1036-B1 mbp1035 MBP2034B11 MICROWAVE TEST FIXTURE

    IEC61249-2-21

    Abstract: diode led ir DSG8100-000 DSG9500-000 DSM8100-000 BRO374-09A
    Text: Applications • Designed for switching applications Features • Low capacitance • Low resistance • Fast switching • Oxide-nitride passivated • Durable construction • High voltage PIN Beam-Lead Diodes Skyworks series of silicon PIN beam-lead diodes offer excellent performance in high


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    PDF DSM8100-000) DSG9500-000) BRO374-09A IEC61249-2-21 diode led ir DSG8100-000 DSG9500-000 DSM8100-000 BRO374-09A

    DSG6474

    Abstract: No abstract text available
    Text: DSG6474-30 SILICON PIN SWITCHING DIODE PACKAGE STYLE PLANA BEAM LEAD DESCRIPTION: The DSG6474-30 is a Silicon Oxide Passivated Silicon Beam Lead PIN Diode Designed for Stripline and Microstrip Applications. MAXIMUM RATINGS I 50 mA V 200 V PDISS 250 mW @ TC = 25 °C


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    PDF DSG6474-30 DSG6474-30 DSG6474

    beam lead pin diode

    Abstract: ASB8000
    Text: ASB8000 SILICON BEAM LEAD PIN DIODE DESCRIPTION: The ASB8000 is a Silicon Beam Lead PIN Diode Designed for High Speed Switching Applications Up to 18 GHz. PACKAGE STYLE BL1 FEATURES INCLUDE: • Low Capacitance - 0.025 pF Typical • Low Series Resistance - 2.5 Ω Typical


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    PDF ASB8000 ASB8000 beam lead pin diode

    DSM8100-000

    Abstract: silicon carbide
    Text: DATA SHEET DSM8100-000: Mesa Beam Lead PIN Diode Applications: ● Designed for switching applications Features Low capacitance Low resistance ● Fast switching ● Oxide–nitride passivated ● Durable construction ● High voltage ● ● Description Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a


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    PDF DSM8100-000: DSM8100-000 silicon carbide

    HPND-4038

    Abstract: beam lead pin diode
    Text: HPND-4038 SILICON BEAM LEAD PIN DIODE DESCRIPTION: The HPND-4038 is a Beam Lead Pin Diode Designed for High Switching Applications Up to 18 GHz. PACKAGE STYLE BIC FEATURES INCLUDE: • Low CT - 0.06 pF Typical • Low RS - 2.0 Max. @ 10 mA • High Speed - τ = 45 nS Typical


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    PDF HPND-4038 HPND-4038 beam lead pin diode

    ultrasonic phased array

    Abstract: s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND-4028 HPND4038
    Text: HPND-4028, HPND-4038 Beam Lead PIN Diodes for Phased Arrays and Switches Data Sheet Description Features The HPND-4028 and 4038 beam lead PIN diodes are ­designed for low capacitance, low resistance, and fast switch­ing at microwave frequencies. These characteristics are achieved at low bias levels for minimal power


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    PDF HPND-4028, HPND-4038 HPND-4028 5967-6157E AV01-0594EN ultrasonic phased array s-parameter s11 s12 s21 ablestik 958 s-parameter file of HPND-4028 HPND-4038 hpnd pin 0.01 pF 4028 BE HPND4028 HPND4038

    beam lead pin diode

    Abstract: No abstract text available
    Text: HPND-4018 SILICON BEAM LEAD PIN DIODE DESCRIPTION: The HPND-4018 is a Beam Lead Pin Diode Designed for High Switching Applications Up to 18 GHz. PACKAGE STYLE BIC FEATURES INCLUDE: • Low CT - 0.025 pF Typical • Low RS - 5.0 Max. @ 10 mA • High Speed - τ = 40 nS Typical


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    PDF HPND-4018 HPND-4018 beam lead pin diode

    diode rj 93

    Abstract: ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
    Text: HMICTM Silicon Beam-Lead PIN Diodes Features • • • • • • • • • • • MA4PBL027 V1 Case Style ODS-1302 Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection


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    PDF MA4PBL027 ODS-1302 diode rj 93 ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186

    40E-14

    Abstract: 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
    Text: MA4PBL027 HMICTM Silicon Beam-Lead PIN Diodes Rev. V1 Features Absolute Maximum Ratings1 • • • • • • • • • • • @ TA = +25°C Unless otherwise specified Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation


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    PDF MA4PBL027 40E-14 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline

    MicroMetrics pin diode MPN1000-12

    Abstract: MicroMetrics pin diode MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12
    Text: Control Devices: MPN 1000 Series Description The MicroMetrics MPN 1000 series Beam Lead PIN diodes features a unique glass and beam construction which allows for mechanical strength and stability during assembly. They are designed for low resistance, low capacitance and fast switching time.


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    PDF MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12 MPN1100-12 MPN1101-12 MicroMetrics pin diode MPN1000-12 MicroMetrics pin diode MPN1000-12 MPN1001-12 MPN1002-12 MPN1003-12 MPN1004-12 MPN1005-12 MPN1006-12 MPN1007-12

    MA4P800

    Abstract: No abstract text available
    Text: Silicon Beam Lead PIN Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are


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    ASB7000

    Abstract: ASB 7000 ASB7003 ASB8000 1838 pin configuration A-SB
    Text: BEAM LEAD PIN DIODES ASI’s ASB 7000 SERIES are Planar Beam Lead PIN Diodes for use as series diodes up to 18 GHz in broadband multi-throw switches, phase shifters, limiters, attenuators and modulators for microstrip and stripline applications. Features include low capacitance, low series


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    PDF DIMENS50NS 10fiA- ASB7000 ASB 7000 ASB7003 ASB8000 1838 pin configuration A-SB

    MA4P800

    Abstract: No abstract text available
    Text: AjÙ^m Silicon Beam Lead PIIM Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION 129 ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are


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    MBP-1035-B11

    Abstract: mbp1035 BP-1030-B11 BP-2034-B11 BP103
    Text: 975 Stewart Avenue • Sunnyvale, California 94086 • 408-737-8181, FAX: 408-733-7645 MESA BEAM LEAD PIN DIODES Metelics’ mesa beam lead PIN diodes provide low microwave capacitance and fast switching performance. They are ideal for use in broad­ band high speed multi-throw switches as well as


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    PDF BP-1030-B11 BP-1033-B11 BP-1034-B11 MBP-1035-B11 BP-1036-B11 BP-2030-B11 BP-2034-B11 mbp1035 BP103

    Untitled

    Abstract: No abstract text available
    Text: PIN DIODES A " • ■jfv- 'v :>■: Dh Oh >C■t Ultra-fast Switching Silicon PIN Diodes. 14 Fast Switching Silicon PIN D io d e s . 15 Beam Lead PIN Diodes. 16


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    MPB-1036-B11

    Abstract: MBP1030B11 MBP-1035-B11 MPB-1035-B11 MBP-2034-B11 MBP2034-B11
    Text: MESA BEAM LEAD PIN DIODES La I1IBZ metelicS " CORPORATION FEATURES • Low C apacitance • Low Resistance • Fast Switching • Rugged Construction


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    PDF 250mWat MPB-2030 MPB-2034 TFP-1034 MPB-1036-B11 MBP1030B11 MBP-1035-B11 MPB-1035-B11 MBP-2034-B11 MBP2034-B11

    HPND4050

    Abstract: IC STU 404 D HPND-4050
    Text: E 3 Pa c k a r d APPLICATION NOTE 971 The HPND-4050 Beam Lead Mesa PIN in Shunt Applications INTRODUCTION The beam lead PIN diode, w h ile sa tisfyin g requirem ents fo r low ca pa citan ce and planar c irc u it attachm ent, is g e n e ra lly fa b rica te d as a planar PIN diode in o rd e r to


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    PDF HPND-4050 D-4050 HPND4050 IC STU 404 D

    ASB7000

    Abstract: No abstract text available
    Text: 0258354 A D V A N C E D S E M I C O N D U C T O R 92D 00110 Ta 7W 7- DE I 02Sfi3S4 0DD0110 BEAM LEAD PIN DIODES ASI’s ASB 7000 SERIES are Planar Beam Lead PIN Diodes for use as series diodes up to 18 GHz in broadband multi-throw switches, phase shifters, limiters, attenuators and modulators for microstrip and


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    PDF 02Sfi3S4 0DD0110 ASB8000 ASB9000 ASB7000

    Untitled

    Abstract: No abstract text available
    Text: Control Devices PLANAR BEAM LEAD PIN DIODES • Low Series Resistance • Low Capacitance • Fast Switching • Electrically Stable Performance • Sound Device and Lead Construction DESCRIPTION APPLICATIONS Hybrid microwave integrated circuit applications utiliz­


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    PDF GC4800 GC4801 GC4802

    Untitled

    Abstract: No abstract text available
    Text: Control Devices HIGH SPEED M ESA BEAM LEAD PIN DIODES • Ultra Fast Switching Speed • 5 Gram Typical Pull Strength • Very Low R/C Insertion/lsolation Products with Low Inductance GOLD LEAD CATHODE • High Quality, High Resistivity Epitaxy GOLD LEAD


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    PDF MA01851