XB15A105
Abstract: pin diode do34
Text: PIN DIODE ◆Long Carrier Lifetime •Applications ◆Small Diode Capacitance 0.36pF at VR=0V, ●VCRs f=100MHz ◆Small Series Order Resistance ●Video Disks ●Antenna Switches ◆Highly Surge-proof ◆Small Glass Package ■Dimensions MAX 2.6 The XB15A105 PIN diode employs a high reliability glass package that is
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100MHz)
XB15A105
DO-34
50MHz,
100MHz,
pin diode do34
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NTE555A
Abstract: No abstract text available
Text: NTE555A Silicon Pin Diode VHF Band Switch Features: D Switching Diode in a DO34 Glass Envelope D Intended for Band Switching in VHF Television Tuners D Low Capacitance Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
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NTE555A
100mA
100MHz
200MHz
NTE555A
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B R065
Abstract: XB15A105 XB15A204 XB15A301
Text: PIN DIODE • Applications ◆ Long Carrier Lifetime ◆ Small Diode Capacitance 0.36pF at VR=0V, f=100MHz ◆ Small Series Order Resistance ◆ Highly Surge-proof ◆ Small Glass Package ● VCRs ● Video Disks ● Antenna Switches ■ General Description
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XB15A105
100MHz)
XB15A105
DO-34
XB15A105,
XB15A204
XB15A301
B R065
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1SV121
Abstract: pin diode do34 Hitachi DSA00517
Text: ADE-208-399 Z 1SV121 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator Rev. 0 Oct. 1995 Features Outline 1 • Low capacitance.(C=0.7pF max) • Small glass package (MHD) enables easy mounting and high reliability. 2 1 Cathode band Ordering Information
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ADE-208-399
1SV121
100MHz
DO-34
1SV121
pin diode do34
Hitachi DSA00517
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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714 diode varicap
Abstract: hitachi diode Hitachi Zener diodes 1SS106 04BZ Hitachi diodes using a zener diode as a varicap 05AZ HRC0203A GENERAL PURPOSE UHF MW MIXER DIODE
Text: DIODE Hitachi Diode Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI DIODE 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-005E
714 diode varicap
hitachi diode
Hitachi Zener diodes
1SS106
04BZ
Hitachi diodes
using a zener diode as a varicap
05AZ
HRC0203A
GENERAL PURPOSE UHF MW MIXER DIODE
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hitachi mosfet power amplifier audio application
Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners
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AmVC132
HVC133
HVC134
HVM131S
HVM131SR
HVM132
HVM132WK
hitachi mosfet power amplifier audio application
transistor 2sk
MESFET Application
N Channel Dual Gate MOS FET UHF/VHF TV Tuner
hitachi mosfet audio application note
uhf tv booster circuit diagram
hvm15 varicap
UHF/VHF booster circuit diagram
booster gsm antenna
UHF/VHF TV Tuner HITACHI
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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MESFET Application
Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:
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49E-13
00E-01
00E-06
44E-13
HVC133
30E-12
27E-15
HVM132WK
MESFET Application
hitachi mosfet power amplifier audio application
2sk2685 spice
00E-12
hitachi mosfet audio application note
Hitachi audio mosfet application
booster gsm antenna
hitachi discrete
circuit diagram wireless video transmitter and re
2SK239A
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r61505
Abstract: R63400 R61506 R61504 R61501 NS953 Niigata Seimitsu ns953 ic data r61503 Niigata Seimitsu 04BZ
Text: Rev.19.00 2007.10.31 Renesas Diodes General Presentation www.renesas.com Renesas Diodes General Presentation October 2007 Standard Product Business Group 10/31/2007 Rev.19.00 2007. Renesas Technology Corp., All rights reserved. Notes regarding these materials
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REJ13G0001-1900
r61505
R63400
R61506
R61504
R61501
NS953 Niigata Seimitsu
ns953 ic data
r61503
Niigata Seimitsu
04BZ
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741mA
Abstract: MBR0530 BAT54 103MA 1N4148 CR32 MIC2141 MIC2141BM5 MIC2141YM5 MIC2142
Text: MIC2141 Micropower Boost Converter General Description Features The MIC2141 is a micropower boost switching regulator • Implements low-power boost, SEPIC, or flyback that can operate from 3- or 4-cell nickel-metal-hydride • 2.2V to 14V input voltage batteries or a single Li-ion cell. This regulator employs a
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MIC2141
MIC2141
330kHz
330kHz,
M9999-122006
741mA
MBR0530
BAT54
103MA
1N4148
CR32
MIC2141BM5
MIC2141YM5
MIC2142
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MBR0503
Abstract: CR32 MIC2141 MIC2141BM5 MIC2141YM5 MIC2142 1N4148 BAT54HT1 MBR0530
Text: MIC2141 Micrel, Inc. MIC2141 Micropower Boost Converter General Description Features The MIC2141 is a micropower boost switching regulator that can operate from 3- or 4-cell nickel-metal-hydride batteries or a single Li-ion cell. This regulator employs a constant 330kHz,
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MIC2141
MIC2141
330kHz,
M9999-042205
MBR0503
CR32
MIC2141BM5
MIC2141YM5
MIC2142
1N4148
BAT54HT1
MBR0530
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MBR0503
Abstract: MBR0530 MB0530 103MA 1N4148 BAT54 BAT54HT1 CR32 MIC2141 MIC2141-BM5
Text: MIC2141 Micrel MIC2141 Micropower Boost Converter Final Information General Description Features The MIC2141 is a micropower boost switching regulator that can operate from 3- or 4-cell nickel-metal-hydride batteries or a single Li-ion cell. This regulator employs a constant 330kHz,
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MIC2141
MIC2141
330kHz,
OT-23-5
MBR0503
MBR0530
MB0530
103MA
1N4148
BAT54
BAT54HT1
CR32
MIC2141-BM5
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MBR0503
Abstract: 180uH datasheet bat54 BAT54 MBR0530 1N4148 BAT54HT1 CR32 MIC2141 MIC2141-BM5
Text: MIC2141 Micrel MIC2141 Micropower Boost Converter Preliminary Information General Description Features The MIC2141 is a micropower boost switching regulator that can operate from 3- or 4-cell nickel-metal-hydride batteries or a single Li-ion cell. This regulator employs a constant 330kHz,
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MIC2141
MIC2141
330kHz,
OT-23-5
MBR0503
180uH
datasheet bat54
BAT54
MBR0530
1N4148
BAT54HT1
CR32
MIC2141-BM5
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BAT85
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode Product specification Supersedes data of February 1992 File under Discrete Semiconductors, SC01 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diode
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M3D050
BAT85
DO-34)
BAT85
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Untitled
Abstract: No abstract text available
Text: MIC2142 Micropower Boost Converter General Description Features The MIC2142 is a micropower boost switching regulator • 2.2V to 16V input voltage housed in a SOT23-5 package. The input voltage range is • Up to 22V output voltage between 2.2V to 16V, making the device suitable for one• 330kHz switching frequency
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MIC2142
MIC2142
OT23-5
330kHz
M9999-102507
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BAT85 equivalent
Abstract: marking sbaa MIC2142YM5 BAT54 BAT85 CR32 MIC2142 MIC2142BM5
Text: MIC2142 Micropower Boost Converter General Description Features The MIC2142 is a micropower boost switching regulator • 2.2V to 16V input voltage housed in a SOT23-5 package. The input voltage range is • Up to 22V output voltage between 2.2V to 16V, making the device suitable for one• 330kHz switching frequency
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MIC2142
MIC2142
OT23-5
330kHz
330kHz
M9999-102507
BAT85 equivalent
marking sbaa
MIC2142YM5
BAT54
BAT85
CR32
MIC2142BM5
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Marking C4 SOT23-5
Abstract: MIC2142YM5
Text: MIC2142 Micropower Boost Converter General Description Features The MIC2142 is a micropower boost switching regulator • 2.2V to 16V input voltage housed in a SOT23-5 package. The input voltage range is • Up to 22V output voltage between 2.2V to 16V, making the device suitable for one• 330kHz switching frequency
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MIC2142
MIC2142
OT23-5
330kHz
M9999-120606
Marking C4 SOT23-5
MIC2142YM5
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do-34 hitachi
Abstract: 1SV121
Text: i HITACHI ADE-208-399 Z 1SV121 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator HITACHI Features Rev. 0 Oct. 1995 Outline • Low capacitance.(C=0.7pF max) • Sm all glass pack ag e (M H D ) en ab les easy mounting and high reliability. =cs=
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1SV121
ADE-208-399
100MHz
DO-34
do-34 hitachi
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES DESCRIPTION • Low forward voltage • Guard ring protected , . . • Herm etically-sealed leaded glass package. Planar Schottky barrier diode with an integrated protection ring against static
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BAT85
DO-34)
MR4540
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BC250A
Abstract: No abstract text available
Text: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura
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BC250A
BC250B
BC250C
BC327
BC327-16
BC327-25
BC327-40
BC328
BC328-16
BC328-25
BC250A
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BAT85
Abstract: pin diode do34 BAT85 SOD68 S0068 philips Schottky diode
Text: Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68
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BAT85
DO-34)
7110fl2b
BAT85
pin diode do34
BAT85 SOD68
S0068
philips Schottky diode
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES DESCRIPTION • Low forward voltage • Guard ring protected Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68
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BAT85
DO-34)
711002b
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10D3
Abstract: 1G14 C 337-40
Text: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.
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BC170A
BC170B
BC170C
BC337
BC338
BC413B2)
BC413C2)
BC414B2)
BC414C2
BC445
10D3
1G14
C 337-40
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