PX10160E
Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
PX10160E
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Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
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Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION
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NX6311EH
NX6311EH
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NX6311EH-AZ
Abstract: NX6311EH PX10160E
Text: LASER DIODE NX6311EH 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX6311EH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel
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NX6311EH
NX6311EH
PL10631EJ01V0DS
NX6311EH-AZ
PX10160E
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX5521 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are
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NX5521
R08DS0028EJ0100
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NX5521
Abstract: PX10160E
Text: Preliminary Data Sheet NX5521 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are
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NX5521
R08DS0028EJ0100
PX10160E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5310
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Abstract: No abstract text available
Text: Preliminary Data Sheet NX6410GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION R08DS0040EJ0500 Rev.5.00 Jun 07, 2011 DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6410GH
R08DS0040EJ0500
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NX8313UD
Abstract: NX8313UD-AZ PX10160E STM-16
Text: LASER DIODE NX8313UD 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8313UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8313UD
NX8313UD
STM-16
OC-48
PL10645EJ01V0Danty
NX8313UD-AZ
PX10160E
STM-16
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.
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NX5315EH
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Abstract: No abstract text available
Text: Preliminary Data Sheet NX6411GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6411GH
R08DS0041EJ0500
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S9850MBA
Abstract: No abstract text available
Text: S9850MBA TECHNICAL DATA Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 980 nm Optical Ouput Power: 50 mW Package: 5.6 mm, without PD and window Electrical Connection Pin Configuration PIN 1 2 3 Bottom View
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S9850MBA
S9850MBA
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Untitled
Abstract: No abstract text available
Text: OD9601N Photo Diode Preamp Module 1.25-Gbps InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9601N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9601N is designed to operate at 1.25 Gbps in
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OD9601N
25-Gbps
STM4/OC12/OC24
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Untitled
Abstract: No abstract text available
Text: OD9604N Photo Diode Preamp Module 2.488 Gbps InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9604N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9604N is designed to operate at 2.488 Gbps in
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OD9604N
STM16/OC48
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nec 2702
Abstract: nec 2702 K
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
nec 2702
nec 2702 K
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Abstract: No abstract text available
Text: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6342EP
NX6342EP
R08DS0050EJ0100
IEEE802
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6240GP
NX6240GP
R08DS0057EJ0100
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6414EH
R08DS0042EJ0100
NX6414EH
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6514EH LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2 R08DS0053EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6514EH is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6514EH
OC-48
NX6514EH
R08DS0053EJ0100
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NX8313UD
Abstract: PX10160E STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX8313UD 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8313UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8313UD
NX8313UD
STM-16
OC-48
PX10160E
STM-16
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PD-32BRC
Abstract: Photo diode circuit diagram cm2215
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-32BRC 1. General Description: Dimensions The PD-32BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and end looking package. The lens effect allows an acceptance angle of ±16° measured
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PD-32BRC
PD-32BRC
-25CC
300Lux
200Lux
Photo diode circuit diagram
cm2215
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laser diode toshiba
Abstract: TOLD9221M 670NM Laser-Diode DAiode
Text: TOLD9221M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9221M
670nm
laser diode toshiba
TOLD9221M
670NM Laser-Diode
DAiode
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laser diode toshiba
Abstract: 670NM Laser-Diode laser diode 670nm
Text: TOLD9231M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9231M
670nm
laser diode toshiba
670NM Laser-Diode
laser diode 670nm
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laser diode toshiba
Abstract: TOLD9442M laser diode toshiba 650 TOLD told9442 daiode
Text: TO SH IBA TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
OLD9442
laser diode toshiba
TOLD9442M
laser diode toshiba 650
TOLD
told9442
daiode
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