sensitivity dB photodiode pin
Abstract: C4890 S5791 pin photodiode 10 ghz rise time avalanche photodiode
Text: PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier 1.5 GHz, 20 dB C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.
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C4890
C4890
S5791,
S5972,
S5973,
15dBm
KACCA0034EA
KPINC0003EB
sensitivity dB photodiode pin
S5791
pin photodiode 10 ghz
rise time avalanche photodiode
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10458E
Abstract: No abstract text available
Text: 10458E 20 GHz High Power PIN Photodiode Receiver DATASHEET | NOVEMBER 2013 MICROWAVE The 10458 PIN microwave photodiode receiver incorporates a high-speed planar PIN photodiode with low-noise bias and monitor electronics. The unit installs in EMCORE’s System 10000 3 RU equipment rack providing a highly reliable, high power photodiode
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10458E
10458E-SA
10458E-FA
0990A
10901G-NA
10901G-UK
10901G-EU
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S5973
Abstract: pin photodiode 10 ghz photodiode amplifier S5791 C4890 pin photodiode 20 ghz S5972 SE-171 PIN photodiode ps rise time avalanche photodiode
Text: PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier 1.5 GHz, 20 dB C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain.
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C4890
C4890
S5791,
S5972,
S5973,
SE-171
KACC1055E01
S5973
pin photodiode 10 ghz
photodiode amplifier
S5791
pin photodiode 20 ghz
S5972
PIN photodiode ps
rise time avalanche photodiode
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PDC4310
Abstract: No abstract text available
Text: H InGaAs/InP FC-Connectorized High Speed Photodiode with Fiber Optic Pigtail Assembly Technical Data PDC4310 Features Description • 20 GHz Bandwidth • 1100-1650 nm Optical Sensitivity The PDC4310 high speed connectorized PIN photodiode is a state of the art optical detector
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PDC4310
PDC4310
10in-lbs.
5963-1126E
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photodiode eyes response application
Abstract: 10G PIN photodiode R-11-020-C photodiode eyes response
Text: InGaAs 10G PIN Photodiode Chip R-11-020-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast response • Operate at -40 to 85ºC • Active diameter is 20µm • 10G Optical receiver application
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R-11-020-C
LUMNDS560-MAR1504
photodiode eyes response application
10G PIN photodiode
R-11-020-C
photodiode eyes response
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10G PIN photodiode
Abstract: LuminentOIC
Text: InGaAs 10G PIN Photodiode Chip R-11-020-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast response • Operate at -40 to 85ºC • Active diameter is 20µm • 10G Optical receiver application
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R-11-020-C
LUMNDS560-MAR3104
10G PIN photodiode
LuminentOIC
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luminent
Abstract: InGaAs photodiode 1310 1550 InGaas PIN photodiode chip
Text: InGaAs 10 Gigabit PIN Photodiode Chip R-SP-0004-V2 Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast response • Operates at –40 to +85ºC • Active diameter is 20µm Applications • 10 Gigabit Optical Receiver
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R-SP-0004-V2
LUMNDS058-0302
luminent
InGaAs photodiode 1310 1550
InGaas PIN photodiode chip
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE GaAs PIN photodiode with preamp G9846-14 ROSA type, 850 nm, 2.5 Gbps Features Applications l φ1.25 mm sleeve type ROSA Receiver Optical Sub-Assembly l High-speed response: 2.5 Gbps l High gain with AGC (Auto Gain Control): 0.9 V/mW (at -20 dBm)
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G9846-14
SE-171
KGPD1018E01
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PIN photodiode 850nm
Abstract: fast photodiode amplifier transimpedance amplifier 7.5 GHz PIN photodiode 850 nm ir photodiode amplifier photodiode amplifier 7.5 ghz pin Photodiode 2 GHz PIN photodiode A/W 850nm PIN photodiode ps MXP3000
Text: MXP3000 Series GaAs PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz active area of 250 mm2 ,
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MXP3000
850nm
MSC1592
PIN photodiode 850nm
fast photodiode amplifier
transimpedance amplifier 7.5 GHz
PIN photodiode 850 nm
ir photodiode amplifier
photodiode amplifier 7.5 ghz
pin Photodiode 2 GHz
PIN photodiode A/W 850nm
PIN photodiode ps
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PIN photodiode 850nm
Abstract: PIN photodiode chip 850nm photodiode 850nm fast photodiode amplifier PIN photodiode 850 nm PIN photodiode ps MXP3004 photodiode pin 850nm pin Photodiode 2 GHz pin photodiode 20 ghz
Text: MXP3000 Series GaAs PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The five devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for 1.4 GHz active area of 250 mm2 ,
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MXP3000
APPLICA028
850nm
MSC1592
PIN photodiode 850nm
PIN photodiode chip 850nm
photodiode 850nm
fast photodiode amplifier
PIN photodiode 850 nm
PIN photodiode ps
MXP3004
photodiode pin 850nm
pin Photodiode 2 GHz
pin photodiode 20 ghz
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Lucent Technologies fiber optics cable
Abstract: 4510A microwave receiver 10456B 4510B D 4515 flange RF resistor 50 Lucent receiver pin photodiode 10 ghz 10458A
Text: Data Sheet August 2000 Microwave Photodiode Receivers Features • Wide-band analog signal reception ■ Single-mode fiber pigtail ■ High optical return loss ■ Up to 20 GHz bandwidth ■ 1310 nm and 1550 nm sensitivity Applications ■ Antenna remoting
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DS00-305OPTO
Lucent Technologies fiber optics cable
4510A
microwave receiver
10456B
4510B
D 4515
flange RF resistor 50
Lucent receiver
pin photodiode 10 ghz
10458A
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2518A
Abstract: photodiode receiver 4510A 4518A D 4515 PIN photodiode 1310 pin photodiode 10 ghz pin photodiode 20 ghz 4510A agere
Text: Data Sheet June 2001 Wideband Photodiode Receivers Features • Wide-band analog signal reception ■ Single-mode fiber pigtail ■ High optical return loss ■ Up to 20 GHz bandwidth ■ 1310 nm and 1550 nm sensitivity Applications ■ Antenna remoting ■
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DS00-305OPTO-1
DS00-305OPTO)
2518A
photodiode receiver
4510A
4518A
D 4515
PIN photodiode 1310
pin photodiode 10 ghz
pin photodiode 20 ghz
4510A agere
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MBC-1000
Abstract: MXPE-LN Niobate bias controller modulator optic
Text: MXAN-LN-20 6/06/07 12:37 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us About Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research
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MXAN-LN-10/20
PT-Q3/07
mxan-ln-10
MBC-1000
MXPE-LN
Niobate
bias controller modulator optic
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MXPE-LN
Abstract: MXAN-LN-20 lithium niobate 40
Text: 10:18 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research
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MXAN-LN-10/20
MBC-1000
PT-Q4/03
MXPE-LN
MXAN-LN-20
lithium niobate 40
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MXPE-LN
Abstract: MXPE-LN-10
Text: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintaining; S standard single mode
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MBC-1000
MXPE-LN
MXPE-LN-10
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MXPE-LN
Abstract: No abstract text available
Text: MXAN-LN-20 6/06/07 12:37 Page 1 MXAN-LN-10/20 Lithium Niobate 10 and 20 GHz Analog Intensity Modulators us About Features Photline Technologies is a provider of lithium niobate based modulation solutions. The primary market served by the company are : optical telecommunications defense and aerospace - sensing and measurement equipments - research
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MXAN-LN-20
MXAN-LN-10/20
MBC-1000
PT-Q3/07
MXPE-LN
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MXPE-LN
Abstract: No abstract text available
Text: MXPE-LN 6/06/07 12:42 Page 1 MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators Ordering MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN-BW-XX-Y-Z-AB-CD us About BW : 10 bandwidth >10 GHz
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Q1/07
MXPE-LN
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Untitled
Abstract: No abstract text available
Text: MX-LN10 6/06/07 11:55 Page 1 MX-LN-10/20 Lithium Niobate 10 & 20 Gb/s Intensity Modulators Ordering information MX-LN-BW-XX-Y-Z-AB-CD BW : 10 bandwidth ≥12 GHz ; 20 bandwidth ≥18 GHz XX : 00 no photodiode; PD internal monitoring photodiode Y : input fiber : P polarisation maintening; S standard single mode
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MX-LN-10/20
LN-10)
MX-LN-20)
OC-192
STM-64
MX-LN-10)
mx-ln-10
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MXPE-LN
Abstract: No abstract text available
Text: MXPE-LN 3/06/05 10:36 Page 1 MXPE-LN series Very High Extinction Ratio Lithium Niobate Intensity Modulators MXPE-LN series - Very High Extinction Ratio Lithium Niobate Intensity Modulators 1010011001 Ordering information MXPE-LN-W-XX-Y-Z-AB-CD W : 10 bandwidth >10 GHz
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MBC-1000
MXPE-LN
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Untitled
Abstract: No abstract text available
Text: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal
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ONET8551T
20-dBm
92-mW
OC-192
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Untitled
Abstract: No abstract text available
Text: ONET8551T www.ti.com SLLSEI5 – OCTOBER 2013 11.3-Gbps Limiting Transimpedance Amplifier With RSSI Check for Samples: ONET8551T FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • 9-GHz Bandwidth 10-kΩ Differential Small Signal
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ONET8551T
20-dBm
92-mW
OC-192
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Untitled
Abstract: No abstract text available
Text: Whpt H EW LET T mLfim P A C K A R D InGaAs/InP High Speed Photodiode Technical Data PDC4304 Features Description • 20 GHz Bandwidth The PDC4304 high speed PIN photodiode is a state of the art optical detector manufactured using our proven, high reliability
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PDC4304
PDC4304
5963-5070E
0012b47
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D739A
Abstract: PD739A13
Text: MITSUBIS]HI ELECTR] C CORPORATION * DATE: SPECIFICATION -SHEET July 20,’00 PREPARED BY: S.Funaba CHECKED BY: S.Minamihara Y.Tanaka APPROVED BY: A.Takemoto 1. TYPE : PD739A13 2. APPLICATOIN : OPTICAL COMMUNICATION 3. STRUCTURE : <>20 \im InGaAs PIN PHOTODIODE with PRE-AMPLIFIER
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PD739A13
G480698
739A13
54GHz
D739A
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Photodiode
Abstract: ortel pd050 PIN photodiode ps PD050-OM Ortel model bn-1 pin photodiode 10 ghz rise time of photodiode PD050 Ortel bn-1 p-i-n photodetector rise time
Text: / T-41-50 ORTEL CORP at D bôlTfl^S QDGG12â S M O R T MODEL PDOSO-OM PHOTODIODE ORTEL CORPORATION HIGH SPEED GaAIAs/GaAs PIN PHOTODIODE FEATURES E 3db Bandwidth of 7.0 GHz E Responsivity of 0.45 A/W E 700 to 900 nm Response El Rise Time of 50 ps El Optical Mount
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PD050-OM
PD050-OM
PD050-0M
I-9572
Photodiode
ortel pd050
PIN photodiode ps
Ortel model bn-1
pin photodiode 10 ghz
rise time of photodiode
PD050
Ortel bn-1
p-i-n photodetector rise time
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