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    PIN SWITCH MMIC KA Search Results

    PIN SWITCH MMIC KA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet

    PIN SWITCH MMIC KA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TGS4304

    Abstract: No abstract text available
    Text: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed


    Original     		PDF TGS4304 TGS4304 33dBm

    Untitled

    Abstract: No abstract text available
    Text: May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw SPDT PIN monolithic switch designed


    Original     		PDF TGS4304 TGS4304 33dBm 30ming

    MMIC SWITCH

    Abstract: RTPA5250-130
    Text: RTPA5250-130 3.3V UNII Band Power Amplifier/Switch MMIC Module for WLAN ADVANCED INFORMATION Description Features The RTPA5250-130 is a small outline, highly integrated power amplifier and switch MMIC-based module for WLAN applications in the 5.15 - 5.25, 5.25 - 5.35, and 5.725 - 5.825 GHz UNII Unlicensed National Information


    Original     		PDF RTPA5250-130 RTPA5250-130 MMIC SWITCH

    IC 994

    Abstract: TGS4304
    Text: Advance Product Information September 26, 2005 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw


    Original     		PDF TGS4304 TGS4304 33dBm IC 994

    S3330

    Abstract: TGS4304
    Text: Advance Product Information February 14, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance • • • • • • • • Primary Applications Description • • • The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw


    Original     		PDF TGS4304 TGS4304 33dBm TGS4304wer S3330

    AP640R2-00

    Abstract: Ka-band TGS4302 DSA00265953
    Text: Advance Product Information February 6, 2006 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss


    Original     		PDF TGS4302 AP640R2-00 Ka-band TGS4302 DSA00265953

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information February 15, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss


    Original     		PDF TGS4302 TGS4302

    Untitled

    Abstract: No abstract text available
    Text: May 2, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed


    Original     		PDF TGS4302

    TGS4302

    Abstract: 10S21
    Text: May 2, 2008 High Power Ka-Band SPDT Switch TGS4302 Key Features and Performance • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss < 4ns Switching Speed


    Original     		PDF TGS4302 TGS43ns. TGS4302 10S21

    4 digit dot matrix display

    Abstract: color decoder TRANSISTOR dual infrared transistor njm2063 infrared receiver led infrared remote switch NJM4556 NJU9202B NJM2065A Infrared receiver module
    Text: DISCONTINUE PRODUCTS TABLE 1 TYPE No. NJM NJM1372A NJM2048 NJM2049 NJM2063 NJM2063A NJM2065 NJM2065A NJM2066 NJM2067 NJM2075A NJM2097 NJM2104F NJM2105 NJM2106 NJM2127 NJM2151 NJM2160 NJM2171 NJM2175 NJM2185 NJM2203 NJM2204B NJM2208 NJM2219 NJM2220 NJM2225A


    Original     		PDF NJM1372A NJM2048 NJM2049 NJM2063 NJM2063A NJM2065 NJM2065A NJM2066 NJM2067 NJM2075A 4 digit dot matrix display color decoder TRANSISTOR dual infrared transistor njm2063 infrared receiver led infrared remote switch NJM4556 NJU9202B NJM2065A Infrared receiver module

    RFID 5.8Ghz

    Abstract: HMC189MS8 HMC264CB1 HMC265CB1 HMC266 HMC280MS8G HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION FEBRUARY 2000 Wireless Symposium 2000 is Stage for New Product Introductions Wireless Symposium/Portable by Design 2000 held in San Jose, CA February 2125 marked the introduction of 16 new MMIC products, covering DC-40 GHz,


    Original     		PDF DC-40 HMC280MS8G HMC189MS8 RFID 5.8Ghz HMC264CB1 HMC265CB1 HMC266 HMC292 HMC294 hittite CMOS 1999 MICROWAVE ASSOCIATES RF SPDT switch

    univision technology

    Abstract: Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION JUNE 1999 Ball Grid Array SMT mmWave Products INSIDE. *12 NEW PRODUCTS RELEASED! Designers of millimeter and microwave radios now have access to advanced MMICs in a rugged SMT packaged format. Hittite Microwave has


    Original     		PDF HMC258CB1 HMC264CB1 HMC265CB1 univision technology Ka-Band MMIC Mixer MICROWAVE ASSOCIATES RF SPDT switch Microwave power GaAs FET data HMC220MS8 ka-band mixer HMC143 HMC259 HMC264CB1 HMC267QS16G

    30GHz diode

    Abstract: AP640R2-00 TGS4302-EPU
    Text: Advance Product Information May 11, 2004 High Power Ka-Band SPDT Switch TGS4302-EPU Key Features and Performance • • • • • • • • • 27 - 46 GHz Frequency Range > 33 dBm Input P1dB @ VC = 7.5V On Chip Biasing Resistors On Chip DC Blocks < 0.9 dB Typical Insertion Loss


    Original     		PDF TGS4302-EPU AP640R2-00 30GHz diode TGS4302-EPU

    mmds down converter

    Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
    Text: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION AUTUMN 2001 1 Watt and 0.5 Watt Power Amplifiers at 1.9 GHz, 2.4 GHz, 3.5 GHz and 5.8 GHz Now Available! New High Efficiency MMIC GaAs InGaP HBT Designs for +3V and +5V Platforms Hittite is expanding its GaAs InGaP HBT product line by adding eight new power


    Original     		PDF OC-48 OC-192 mmds down converter HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G

    Untitled

    Abstract: No abstract text available
    Text: MASW-010646 Ka-Band High Power Reflective SPDT PIN Switch 26-40 GHz Features •      Rev. V1 Functional Diagram Broadband Performance, 26 to 40 GHz Low Loss: 0.6 dB High Isolation: 32 dB Up to 40 dBm CW Power Die with G-S-G RF Pads and DC Bias Pads


    Original     		PDF MASW-010646 MASW-010646

    3g signal Booster

    Abstract: HMC439QS16G HMC245QS16 W. Howard Associates gsm Booster GSM/ 3G booster HMC444LP4 Lambda Sensor hmc439 HMC311LP3
    Text: WINTER 2003 OFF-THE-SHELF NEW RF TO MILLIMETERWAVE IC PRODUCTS FROM HITTITE INSIDE. * 15 NEW PRODUCTS RELEASED! * High IP3 Amplifiers, Pg 2 * SP3T Switches and Digital Attenuators, Pg 3 * High Isolation CATV Switch, Pg 4 * Medium Power Amp, Pg 4 * Active Multiplier Family, Pg 5


    Original     		PDF 36dBm OC-48 OC-192 3g signal Booster HMC439QS16G HMC245QS16 W. Howard Associates gsm Booster GSM/ 3G booster HMC444LP4 Lambda Sensor hmc439 HMC311LP3

    Untitled

    Abstract: No abstract text available
    Text: SONY CXG1039TN High Isolation Absorptive SPDT Switch MMIC with Integrated Control Logic Description 10 pin TSSOP Plastic The CXG 1039TN is a high isolation absorptive SPDT (Single Pole Dual Throw) switch MMIC used in PCS handsets. This IC is designed using the Sony’s GaAs J-FET


    OCR Scan     		PDF CXG1039TN 1039TN 10PIN

    Untitled

    Abstract: No abstract text available
    Text: SONY CXG1045N High Power DPDT Switch for GSM Description The CXG1045N is a DPDT Dual Pole Dual Throw antenna switch MMIC used in personal communication 8 pin SSOP (Plastic) handsets such as GSM, GSM1800 or dualband. This IC is designed using the Sony's GaAs J-FET process.


    OCR Scan     		PDF CXG1045N GSM1800 CXG1045N 900MHz 38dBm 37dBm GSM900 GSM900/GSM1800

    Untitled

    Abstract: No abstract text available
    Text: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha AP640R2-00 Features Chip Outline • Broad Bandwidth, 26-40 GHz ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm Peak, 33 dBm CW


    OCR Scan     		PDF AP640R2-00 8/98A

    AP640R2-00

    Abstract: gaas spdt switch ka band mmic pin switch mmic ka T1820
    Text: 26-40 GHz GaAs MMIC SPDT PIN Switch EBAlpha A P 640R 2-00 Chip Outline Features • Broad Bandwidth, 26-40 GHz o ■ Low Loss, <1.1 dB ■ High Isolation, >28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, <2 ns ■ High Power Handling Capability, 37 dBm


    OCR Scan     		PDF AP640R2-00 8/98A gaas spdt switch ka band mmic pin switch mmic ka T1820

    AP640R2-00

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT PIN Switch 26-40 GHz Reflective AP640R2-00 Features • Broad Bandwidth, 26 - 40 GHz ■ Low Loss, < 1.1 dB ■ High Isolation, > 28 dB ■ Good Return Loss, <-9 dB ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 25 mA Total at -5V ■ High Power Handling Capability, 37 dBm Peak,


    OCR Scan     		PDF AP640R2-00 AP640R2-00 35GHz

    Signal Path Designer

    Abstract: PIN diode switch 3a "pin diode" DS025 DS0602
    Text: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez, CA After the system design has been blocked out, after the individual component specifications to achieve the overall system’s performance have been identified, the crucial moment arrives.actual components selection! Amplifiers, filters, mixers and


    OCR Scan     		PDF DS0352 DS0602 DS0842 DS0252 DS0052 DS0602 100C1003 DS0800 DS0842 Signal Path Designer PIN diode switch 3a "pin diode" DS025

    S0800

    Abstract: No abstract text available
    Text: SELECTING THE RIGHT RF SWITCH Ed Blair, Kalyan Farrington and Kelvin Tubbs Daico Industries, Inc. Rancho Dominguez , C'A A fte r the system design has been blocked out, a fte r the individual com ponent specifications to achieve the overall system ’s performance have been identified, the crucial mom ent arrives.actual components selection! Amplifiers, filters,


    OCR Scan     		PDF DS0252 DS0052 DS0602 100C1003 DS0800 DS0842 S0800

    GaAs MESFET

    Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
    Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .


    OCR Scan     		PDF DC-18 MA01801 GaAs MESFET SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch