2N4117A NATIONAL SEMICONDUCTOR
Abstract: riaa equalized UDT-PIN OPA2111 OPA2111AM OPA2111BM OPA2111KM OPA2111SM UDT Pin-040A
Text: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max
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OPA2111
10kHz
114dB
OPA2111
2N4117A NATIONAL SEMICONDUCTOR
riaa equalized
UDT-PIN
OPA2111AM
OPA2111BM
OPA2111KM
OPA2111SM
UDT Pin-040A
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OPA2111
Abstract: UDT Pin-040A OPA2111AM OPA2111BM OPA2111KM OPA2111KP OPA2111SM
Text: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max
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OPA2111
10kHz
114dB
OPA2111
UDT Pin-040A
OPA2111AM
OPA2111BM
OPA2111KM
OPA2111KP
OPA2111SM
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udt UV100
Abstract: PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI
Text: INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode Note: cathode is common to case in metal package products unless otherwise noted .
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UV-35P
XUV-50C
XUV-100C
RD-100
RD-100A
UV-035DC
UV-100DC
UV-035EC
UV-100EC
UV-005DC
udt UV100
PIN-10D
PIN-10AP
PIN-6DPI
UDT Sensors PSD
FIL-3C
PIN-040A
PIN-HS040
XUV-100C
PIN-5DI
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HP 5082-4204
Abstract: UDT Pin-040A photodiode amplifier OPA128 SD-041-11-21-011 fast photodiode amplifier hp 5082-4204 pin photodiode 760nm photodiode 5082-4204 J FET RF Cascode Input
Text: DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier achieves its 75fA maximum bias current without compromise. Using standard design techniques, serious performance trade-offs were required which sacrificed overall
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OPA128
OPA128
HP 5082-4204
UDT Pin-040A
photodiode amplifier
SD-041-11-21-011
fast photodiode amplifier
hp 5082-4204 pin photodiode
760nm photodiode
5082-4204
J FET RF Cascode Input
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Untitled
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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Untitled
Abstract: No abstract text available
Text: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max
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OPA2111
10kHz
114dB
OPA2111
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Untitled
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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Untitled
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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PIN-10D
Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,
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OS-P200
OSD100-0A
OSD100-5TA
PIN-10D
PIN-5DI
PIN-13DI
PIN-10DF
PIN-10DI
PIN10DI
OSD100-0A
InGaAs APD quadrant
OSD5-5T
PIN-44DI
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PIN-125DPL
Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
Text: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral
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OS-P200
OSD100-0A
OSD100-5TA
PIN-125DPL
PIN-10DP
InGaAs APD quadrant
OSD1-5T
pin-6dp
PIN-10AP
PIN-10DPI
PIN-13DPI
PIN-220DP
PIN-25D
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FIL-UV50
Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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diffuFIL-UV100
FIL-UV005
FIL-UV20
FIL-UV50
FIL-UV100
FIL-UV50
FIL-UV100
PIN-10D
XUV-005
UV-100
UV-100L
PIN-5D
PIN-5DPI
UV-035DQC
PIN-10AP
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UDT Pin-6dp
Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of
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1100nm.
drif-013D,
UV-013
15OSD-5-0,
OSD15-0,
OSD15-5T
BPX-65R
BPX-65
UV-001,
UDT Pin-6dp
UDT UV-005
UDT Pin-6dpI
OSD5.8-7Q
OSD15-5T
OSD5-5T
BPX65 amplifier
UDT photodiode -5T
PIN-020A
UDT-455UV
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OPA404
Abstract: OPA404AG OPA404BG OPA404KU OPA404SG
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
OPA404AG
OPA404BG
OPA404KU
OPA404SG
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OPA404AG
Abstract: 100-k05 OPA404 OPA404BG OPA404KU OPA404SG OPA404KP UDT Pin-040A
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
48dB/Octave,
650kHz
410MHz
OPA404AG
100-k05
OPA404BG
OPA404KU
OPA404SG
OPA404KP
UDT Pin-040A
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opa404
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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SPOT-9DMI
Abstract: SPOT-2DMI SC-10D QD7-0 PIN-040A SPOT-4D SPOT-9D OSD15-5T SPOT-2D OSD5-5T
Text: Segmented Photodiodes SPOT Series Position Sensing Detector (PSD) The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.0004" well defined gap between the adjacent
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350-1100nm.
BPX-65
UV-001,
UV-005,
UV-015
PIN-125DPL
PIN-HR005
PIN-HR008
PIN-HR020
PIN-HR026
SPOT-9DMI
SPOT-2DMI
SC-10D
QD7-0
PIN-040A
SPOT-4D
SPOT-9D
OSD15-5T
SPOT-2D
OSD5-5T
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Untitled
Abstract: No abstract text available
Text: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max
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OPA2111
10kHz
114dB
OPA2111
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AD547
Abstract: OPA2111 OPA2111AM OPA2111BM OPA2111KM OPA2111SM transistor kp 303
Text: OPA2111 Dual Low Noise Precision Difet ® OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW NOISE: 100% Tested, 8nV/√Hz max at 10kHz ● PRECISION INSTRUMENTATION ● DATA ACQUISITION ● TEST EQUIPMENT ● ● ● ● ● LOW BIAS CURRENT: 4pA max
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OPA2111
10kHz
114dB
OPA2111
AD547
OPA2111AM
OPA2111BM
OPA2111KM
OPA2111SM
transistor kp 303
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PIN-10AP
Abstract: PIN-10DP PIN-10D UV-005EQ PIN-5DI BPX65 high sensitive XUV-020 UV-005DC UV-013D UV-013E
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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diffuFIL-UV100
FIL-UV005
FIL-UV20
FIL-UV50
FIL-UV100
PIN-10AP
PIN-10DP
PIN-10D
UV-005EQ
PIN-5DI
BPX65 high sensitive
XUV-020
UV-005DC
UV-013D
UV-013E
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Untitled
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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OPA404 "pin compatible"
Abstract: OPA404 OPA404AG OPA404BG OPA404KU OPA404SG
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
OPA404 "pin compatible"
OPA404AG
OPA404BG
OPA404KU
OPA404SG
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Untitled
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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Untitled
Abstract: No abstract text available
Text: OPA404 Quad High-Speed Precision Difet OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 6.4MHz ● HIGH SLEW RATE: 35V/µs ● LOW OFFSET: ±750µV max ● PRECISION INSTRUMENTATION ● ● ● ● ● ● LOW BIAS CURRENT: ±4pA max ● LOW SETTLING: 1.5µs to 0.01%
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OPA404
OPA404
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PIN-5DI
Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such
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