pirgo 2N3054
Abstract: No abstract text available
Text: I ELECTRONICS INC ~ Ö 7 » T | D 0 H 3 5 t:iS DODODSS b 7 POWER TRANSISTOR ENGINEERING BULLETIN 2N3054 TYPE 2N3054, 4 AM P NP*L T E R M IN A L C O N N E C T IO N S SILICON SINGLE-DIFFUSED I BASE ? F M IT T E R CA SE CO LLECT O R SEATING "P L A N E 050 M AX*
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D0H35t
2N3054
2N3054,
D043Sc
2N3054
pirgo 2N3054
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SAP 17 TRANSISTOR VOLTAGE AND AMP
Abstract: 2N3054 pirgo 2N3054 SAP 17 TRANSISTOR Pirgo Electronics 104351-5
Text: A P I ELE CTR ON IC S INC 07 » F 1 00435=12 000G055 POWER TRANSISTOR ENGINEERING BULLETIN TYPE 2N 3054, 4 AMP NPN SILICON SINGLE-DIFFUSED POWER TRANSISTOR . High D issipation, P d = 29W 075 050 - 3 6 0 MIN High V oltage, BVCex = 9 0 V a l l d im e n s i o n s in i n c h e s
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2N3054
2N3054,
SAP 17 TRANSISTOR VOLTAGE AND AMP
2N3054
pirgo 2N3054
SAP 17 TRANSISTOR
Pirgo Electronics
104351-5
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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