32C59
Abstract: No abstract text available
Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38 4C6C"#$%9C !9E79845633E92D36453 8C&&9A29!6 9E73D9#C6DC3 99'7C 39!6 D388A299 2# 4C6C"#$%9EC !39 759BF892D364573 8C&9A29F6 9E73D9#C6DC3 99 7C 39F6
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23456784539A6BCDEF
345674F
976BCDEF
3E92D3645
59BF8
92D3645
428654E4
ACEC24
D32E32
ACEC26
32C59
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AD33b
Abstract: No abstract text available
Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38 5C4578C73D36 389C ! 57"59768!F3 9EC !3 &D2' 36A4F36 6*23428654F4 &+,-6.6/$& 0+61236.6$46)60+566.64 B817364835(3 # 97D11324835(3 # :FF314(4F2373
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23456784539A6BCDEF
345674F
976BCDEF
5C4578C
73D36
36A4F3
428654F4
97D1132
97D11326411
E32F32
AD33b
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Untitled
Abstract: No abstract text available
Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted
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CF003
CF003-03
CF003
CF003-01
n745D3
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Untitled
Abstract: No abstract text available
Text: fflff » m i r CMM0335 Advanced Product In fo rm atio n Septem ber 1996 1 o f 2 890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier Features □ 55% Power Added Efficiency □ 35 dBm Output Power □ Low Harmonic Distortion □ Low Cost, SO-8 Surface Mount Package
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CMM0335
CMM0335pplication,
1745G
0G0D57D
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CMM0331-AK
Abstract: No abstract text available
Text: CMM0331 A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion □ Low Cost, SO-8 Surface Mount Package
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CMM0331
CMM0331-AK
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CMM0331-AK
Abstract: No abstract text available
Text: S = = €E LE R Ê T£K CMM0331 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion
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CMM0331
CMM0331
CMM0331-AK
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Untitled
Abstract: No abstract text available
Text: ir e i C D iT E V CAS2404 2.4 to 2.5 GHz Power Amplifier-T/R Switch Product In fo rm atio n M arch 1 9 9 6 1 o f 4 Functional Block Diagram Features □ +21 dBm Output Power □ 8 dB Power Control Range □ PCMCIA Compatible 8 7 6 5 4 3 2 1 Applications
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CAS2404
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celeritek LNA
Abstract: IM361 000G14 CAS2403 CAS2403-AM CAS2403-AM-000T CCV2501 SOIC-16
Text: rei eoi r e a r P rod uct S p e c ific a tio n s J u ly 1995 1 o f 4 CAS2403 2.4 to 2.5 GHz Power Amplifier-T/R Switch Features □ +20 dBm Output Power □ Power Control □ PCMCIA Compatible Functional Block Diagram 8 7 6 5 4 - 3 2 1 Applications □ Wireless LANs
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CAS2403
CAS2403
000G141
celeritek LNA
IM361
000G14
CAS2403-AM
CAS2403-AM-000T
CCV2501
SOIC-16
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Untitled
Abstract: No abstract text available
Text: CELERSTEK CCV2501 2.4 to 2.5 GHz Integrated Converter P rod uct S p ecificatio n s J u ly 1995 1 o f 4 Features □ Meets FCC ISM Band Regulations □ PCMCIA Compatible 16 Pin SOIC Package □ Low Power Consumption With Standby Mode for Battery Powered Applications
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CCV2501
CCV2501
n74503
0G00542
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s02b
Abstract: 2764 S02B-5 2764D J621 lm 3090 IDT100494 IDT101494 IDT10494 2764 pin diagram
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM :ÏWNs\P Jd t) IDT10494 IDT100494 IDT101494 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 16,384-words x 4-bit organization Address access time: 4.5/5/6/7/8/10/15 ns
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IDT10494
IDT100494
IDT101494
384-words
900mW
MIL-STD-883,
IDT10494,
IDT101494
536-bit
s02b
2764
S02B-5
2764D
J621
lm 3090
2764 pin diagram
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100A484
Abstract: 100484 Z623 I60S4 10A484
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels
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IDT10484,
IDT10A484
IDT100484,
IDT100A484
IDT101484,
IDT101A484
4096-words
900mW
MIL-STD-883,
IDT10484
100A484
100484
Z623
I60S4
10A484
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100A484
Abstract: No abstract text available
Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels
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IDT10484,
IDT10A484
IDT100484,
IDT100A484
IDT101484,
IDT101A484
4096-words
900mW
MIL-STD-883,
T10484
100A484
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marking M9u
Abstract: 5962-E1257-2
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED R EV SH EE T REV SH EET R E V STATUS O F SH EETS REV SH EET 1 PM ICN /A 4 5 6 7 8 9 10 11 12 13 14 15 DEFENSE ELECTRO NICS SU PPLY CENTER DAYTON, OHIO 45444 CMA In fA / n A y s . A tt DR/ iWING APPR O V A L^ ffË T '
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S61772
IDT54FCT533ADB
P54PCT533ADMB
5962-8865102SX
IDT54FCT533AEB
5962-88651022X
IDT54FCT533ALB
P54PCT533ALMB
1M8-M9-B04
marking M9u
5962-E1257-2
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Untitled
Abstract: No abstract text available
Text: :ÏWNNa HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM Jd t) IDT10494 IDT100494 IDT101494 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 16,384-words x 4-bit organization Address access time: 4.5/5/6/7/8/10/15 ns
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IDT10494
IDT100494
IDT101494
384-words
IL-STD-883,
T10494,
T101494
536-bit
16Kx4,
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Untitled
Abstract: No abstract text available
Text: /S T ^ 7 /. S G S -1 H 0 M S 0 N B fflllg @ ilL i® T n M ID i L 6 2 5 8 PWM CONTROLLED - HIGH CURRENT DMOS UNIVERSAL MOTOR DRIVER PRODUCT PREVIEW • ABLE TO DRIVE BOTH WINDINGS OF A BI POLAR STEPPER MOTOR OR TWO DC MO TORS ■ OUTPUT CURRENT UP TO 1.5A EACH
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L6258
L6258
PLCC44
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 PMICN/A 4 CMA 5 6 7 8 9 10 11 12 13 14 15 fA/nAys. DR/iWING APPROVAL^ffËT' 15 NAY 1989 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 t In Att AMSC N/A
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IDT54FCT533AEB
5962-88651022X
IDT54FCT533ALB
P54PCT533ALMB
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74S129
Abstract: 54FCT240 54fct240a 5962-8765501RX 5962-8765502 5962-87655012X p54pct240 7411 TTL 7411 truth table idt54fct240adb
Text: REVISIONS LTR DESCRIPTION DATE {YR-MO-OA Add vendor CAGE 75569. Add d e v ic e ty p e 02. Add ca se o u t lin e S. T e c h n ic a l changes in t a b le I . E d it o r ia l changes th ro u g h o u t. 89 MAR 28 REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET
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IDT54FCT240LB
P54PCT240LMB
5962-8765502RX
IDT54FCT240ADB
5962-8765502SX
IDT54FCT240AEB
5962-87655022X
IDT54FCT240ALB
74S129
54FCT240
54fct240a
5962-8765501RX
5962-8765502
5962-87655012X
p54pct240
7411 TTL
7411 truth table
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54FCT273a
Abstract: 54FCT273 marking a11 diode 5962-8765601RX 5962-8765601SX
Text: REVISIONS LTR D ESCRIPT IO N D A T E Y R -M O -O A Add case outline "S" to device type "01". Add device type 02 to drawing for case outlines R, S, and 2. Add vendors CAGE 75563 and 27014 to device type 01. Add vendors CAGE 61772 and 75569 to device type 02.
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2N667
Abstract: 2N6671 2N6673 TA100
Text: MIL-S-19500/536 USAF 22 O c t o b e r 1 9 8 0 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , T R A N S I S T O R , NPN, S I L I C O N , P O W E R T Y P E S 2 N6 6 7 1 , A ND 2 N6 6 7 3 , JAN, J A N T X , A N D J A N T X V This s p e c i f i c a t i o n
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MIL-S-19
2N6671,
2N6673,
MIL-S-19500.
v19500/536C
MIL-S-l9500/536
MIL-S-19500/536C
2N667
2N6671
2N6673
TA100
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TX2N1724
Abstract: 2N1724 2N1722 ADE350
Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t
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MIL-S-19500/262F
MIL-S-19500/262E
2N1722,
TX2N1722,
2N1724,
TX2N1724
1969-343-225/J16
TX2N1724
2N1724
2N1722
ADE350
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Halbleiterbauelemente DDR
Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder
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Untitled
Abstract: No abstract text available
Text: A E M Ä N ] ! DMF©[^G!Mini K] in t e l 8XC196NU COMMERCIAL CHMOS 16-BIT MICROCONTROLLER Chip-select Unit — 6 Chip-select Pins — Dynamic Demultiplexed/Multiplexed Address/Data Bus for Each Chip Select — Programmable Wait States 0-15 for Each Chip Select
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8XC196NU
16-BIT
16-bit)
8XC196NP
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ix335
Abstract: No abstract text available
Text: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC P relim inary 16M x 64/72 2 Bank U nbuffered SDRAM M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only
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IBM13N16644HC
IBM13N16734HC
168-Pin
16Mx64/72
ix335
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germanium
Abstract: 74HC244A 74HC589 ALI M 3329 B1 74HC163
Text: High-Speed CMOS Data Function Selector Guide Design Considerations Device Data Sheets [3 Ordering Information [4 W H A T ’S NEW ! DATA SHEETS ADDED DATASHEETS DELETED MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540
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MC74HCU04A
MC54/74HC390A
MC54/74HC08
MC54/74HCT541
MC74HC76
MC54/74HC393A
MC54/74HC540
MC74HC4020
MC54/74HC86A
MC54/74HC533A
germanium
74HC244A
74HC589
ALI M 3329 B1
74HC163
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