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    PJ 3236 Search Results

    PJ 3236 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HD6432365WXXXTE Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion) Visit Renesas Electronics Corporation
    HD6432365XXXF Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion) Visit Renesas Electronics Corporation
    HD6432365XXXTE Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion) Visit Renesas Electronics Corporation
    HD6432365WXXXF Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion) Visit Renesas Electronics Corporation
    HD6432365XXXFW Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion) Visit Renesas Electronics Corporation

    PJ 3236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32C59

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38  4C6C"#$%9C !9E79845633E92D36453 8C&&9A29!6 9E73D9#C6DC3 99'7C 39!6 D388A299 2# 4C6C"#$%9EC !39 759BF892D364573 8C&9A29F6 9E73D9#C6DC3 99 7C 39F6


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    PDF 23456784539A6BCDEF 345674F 976BCDEF 3E92D3645 59BF8 92D3645 428654E4 ACEC24 D32E32 ACEC26 32C59

    AD33b

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38  5C4578C73D36 389C ! 57"59768!F3 9EC !3 &D2' 36A4F36 6*23428654F4 &+,-6.6/$& 0+61236.6$46)60+566.64 B817364835(3 # 97D11324835(3 # :FF314(4F2373


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    PDF 23456784539A6BCDEF 345674F 976BCDEF 5C4578C 73D36 36A4F3 428654F4 97D1132 97D11326411 E32F32 AD33b

    Untitled

    Abstract: No abstract text available
    Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted


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    PDF CF003 CF003-03 CF003 CF003-01 n745D3

    Untitled

    Abstract: No abstract text available
    Text: fflff » m i r CMM0335 Advanced Product In fo rm atio n Septem ber 1996 1 o f 2 890 to 915 MHz 6V, 35 dBm, GSM Power Amplifier Features □ 55% Power Added Efficiency □ 35 dBm Output Power □ Low Harmonic Distortion □ Low Cost, SO-8 Surface Mount Package


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    PDF CMM0335 CMM0335pplication, 1745G 0G0D57D

    CMM0331-AK

    Abstract: No abstract text available
    Text: CMM0331 A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion □ Low Cost, SO-8 Surface Mount Package


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    PDF CMM0331 CMM0331-AK

    CMM0331-AK

    Abstract: No abstract text available
    Text: S = = €E LE R Ê T£K CMM0331 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion


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    PDF CMM0331 CMM0331 CMM0331-AK

    Untitled

    Abstract: No abstract text available
    Text: ir e i C D iT E V CAS2404 2.4 to 2.5 GHz Power Amplifier-T/R Switch Product In fo rm atio n M arch 1 9 9 6 1 o f 4 Functional Block Diagram Features □ +21 dBm Output Power □ 8 dB Power Control Range □ PCMCIA Compatible 8 7 6 5 4 3 2 1 Applications


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    PDF CAS2404

    celeritek LNA

    Abstract: IM361 000G14 CAS2403 CAS2403-AM CAS2403-AM-000T CCV2501 SOIC-16
    Text: rei eoi r e a r P rod uct S p e c ific a tio n s J u ly 1995 1 o f 4 CAS2403 2.4 to 2.5 GHz Power Amplifier-T/R Switch Features □ +20 dBm Output Power □ Power Control □ PCMCIA Compatible Functional Block Diagram 8 7 6 5 4 - 3 2 1 Applications □ Wireless LANs


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    PDF CAS2403 CAS2403 000G141 celeritek LNA IM361 000G14 CAS2403-AM CAS2403-AM-000T CCV2501 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: CELERSTEK CCV2501 2.4 to 2.5 GHz Integrated Converter P rod uct S p ecificatio n s J u ly 1995 1 o f 4 Features □ Meets FCC ISM Band Regulations □ PCMCIA Compatible 16 Pin SOIC Package □ Low Power Consumption With Standby Mode for Battery Powered Applications


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    PDF CCV2501 CCV2501 n74503 0G00542

    s02b

    Abstract: 2764 S02B-5 2764D J621 lm 3090 IDT100494 IDT101494 IDT10494 2764 pin diagram
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM :ÏWNs\P Jd t) IDT10494 IDT100494 IDT101494 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 16,384-words x 4-bit organization Address access time: 4.5/5/6/7/8/10/15 ns


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    PDF IDT10494 IDT100494 IDT101494 384-words 900mW MIL-STD-883, IDT10494, IDT101494 536-bit s02b 2764 S02B-5 2764D J621 lm 3090 2764 pin diagram

    100A484

    Abstract: 100484 Z623 I60S4 10A484
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels


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    PDF IDT10484, IDT10A484 IDT100484, IDT100A484 IDT101484, IDT101A484 4096-words 900mW MIL-STD-883, IDT10484 100A484 100484 Z623 I60S4 10A484

    100A484

    Abstract: No abstract text available
    Text: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels


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    PDF IDT10484, IDT10A484 IDT100484, IDT100A484 IDT101484, IDT101A484 4096-words 900mW MIL-STD-883, T10484 100A484

    marking M9u

    Abstract: 5962-E1257-2
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED R EV SH EE T REV SH EET R E V STATUS O F SH EETS REV SH EET 1 PM ICN /A 4 5 6 7 8 9 10 11 12 13 14 15 DEFENSE ELECTRO NICS SU PPLY CENTER DAYTON, OHIO 45444 CMA In fA / n A y s . A tt DR/ iWING APPR O V A L^ ffË T '


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    PDF S61772 IDT54FCT533ADB P54PCT533ADMB 5962-8865102SX IDT54FCT533AEB 5962-88651022X IDT54FCT533ALB P54PCT533ALMB 1M8-M9-B04 marking M9u 5962-E1257-2

    Untitled

    Abstract: No abstract text available
    Text: :ÏWNNa HIGH-SPEED BiCMOS ECL STATIC RAM 64K 16K x 4-BIT SRAM Jd t) IDT10494 IDT100494 IDT101494 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 16,384-words x 4-bit organization Address access time: 4.5/5/6/7/8/10/15 ns


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    PDF IDT10494 IDT100494 IDT101494 384-words IL-STD-883, T10494, T101494 536-bit 16Kx4,

    Untitled

    Abstract: No abstract text available
    Text: /S T ^ 7 /. S G S -1 H 0 M S 0 N B fflllg @ ilL i® T n M ID i L 6 2 5 8 PWM CONTROLLED - HIGH CURRENT DMOS UNIVERSAL MOTOR DRIVER PRODUCT PREVIEW • ABLE TO DRIVE BOTH WINDINGS OF A BI­ POLAR STEPPER MOTOR OR TWO DC MO­ TORS ■ OUTPUT CURRENT UP TO 1.5A EACH


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    PDF L6258 L6258 PLCC44

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 PMICN/A 4 CMA 5 6 7 8 9 10 11 12 13 14 15 fA/nAys. DR/iWING APPROVAL^ffËT' 15 NAY 1989 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 t In Att AMSC N/A


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    PDF IDT54FCT533AEB 5962-88651022X IDT54FCT533ALB P54PCT533ALMB

    74S129

    Abstract: 54FCT240 54fct240a 5962-8765501RX 5962-8765502 5962-87655012X p54pct240 7411 TTL 7411 truth table idt54fct240adb
    Text: REVISIONS LTR DESCRIPTION DATE {YR-MO-OA Add vendor CAGE 75569. Add d e v ic e ty p e 02. Add ca se o u t lin e S. T e c h n ic a l changes in t a b le I . E d it o r ia l changes th ro u g h o u t. 89 MAR 28 REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET


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    PDF IDT54FCT240LB P54PCT240LMB 5962-8765502RX IDT54FCT240ADB 5962-8765502SX IDT54FCT240AEB 5962-87655022X IDT54FCT240ALB 74S129 54FCT240 54fct240a 5962-8765501RX 5962-8765502 5962-87655012X p54pct240 7411 TTL 7411 truth table

    54FCT273a

    Abstract: 54FCT273 marking a11 diode 5962-8765601RX 5962-8765601SX
    Text: REVISIONS LTR D ESCRIPT IO N D A T E Y R -M O -O A Add case outline "S" to device type "01". Add device type 02 to drawing for case outlines R, S, and 2. Add vendors CAGE 75563 and 27014 to device type 01. Add vendors CAGE 61772 and 75569 to device type 02.


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    2N667

    Abstract: 2N6671 2N6673 TA100
    Text: MIL-S-19500/536 USAF 22 O c t o b e r 1 9 8 0 MILITARY SPECIFICATION S E M I C O N D U C T O R D E V I C E , T R A N S I S T O R , NPN, S I L I C O N , P O W E R T Y P E S 2 N6 6 7 1 , A ND 2 N6 6 7 3 , JAN, J A N T X , A N D J A N T X V This s p e c i f i c a t i o n


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    PDF MIL-S-19 2N6671, 2N6673, MIL-S-19500. v19500/536C MIL-S-l9500/536 MIL-S-19500/536C 2N667 2N6671 2N6673 TA100

    TX2N1724

    Abstract: 2N1724 2N1722 ADE350
    Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­


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    PDF MIL-S-19500/262F MIL-S-19500/262E 2N1722, TX2N1722, 2N1724, TX2N1724 1969-343-225/J16 TX2N1724 2N1724 2N1722 ADE350

    Halbleiterbauelemente DDR

    Abstract: MAA 436 TESLA mikroelektronik applikation Radio Fernsehen Elektronik 1977 Heft 9 IL709M mikroelektronik Heft MAA725 K553UD1A "Mikroelektronik" Heft Tesla katalog
    Text: INFORMATION MIKROELEKTRONIK APPLIKATION K 159 INNENSCHALTUNG SONDERHEFT IMPORT­ BAUELEMENTE UDSSR INTEGRIERTE SCHALTUNGEN INFORMATION-APPLIKATION SONDERHEFT IMPORTBAUELEMENTE INTEGRIERTE SCHALTUNGEN MIKROELEKTRONIK HEFT 6 veb Halbleiterwerk frankfurt oder


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    Untitled

    Abstract: No abstract text available
    Text: A E M Ä N ] ! DMF©[^G!Mini K] in t e l 8XC196NU COMMERCIAL CHMOS 16-BIT MICROCONTROLLER Chip-select Unit — 6 Chip-select Pins — Dynamic Demultiplexed/Multiplexed Address/Data Bus for Each Chip Select — Programmable Wait States 0-15 for Each Chip Select


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    PDF 8XC196NU 16-BIT 16-bit) 8XC196NP

    ix335

    Abstract: No abstract text available
    Text: I =¥= = = = ’= IBM13N16644HC IBM13N16734HC P relim inary 16M x 64/72 2 Bank U nbuffered SDRAM M odule Features • Programmable Operation: - CAS Latency: 2, 3 - Burst Type: Sequential or Interleave - Burst Length: 1, 2, 4, 8, Full-Page FullPage supports Sequential burst only


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    PDF IBM13N16644HC IBM13N16734HC 168-Pin 16Mx64/72 ix335

    germanium

    Abstract: 74HC244A 74HC589 ALI M 3329 B1 74HC163
    Text: High-Speed CMOS Data Function Selector Guide Design Considerations Device Data Sheets [3 Ordering Information [4 W H A T ’S NEW ! DATA SHEETS ADDED DATASHEETS DELETED MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540


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    PDF MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540 MC74HC4020 MC54/74HC86A MC54/74HC533A germanium 74HC244A 74HC589 ALI M 3329 B1 74HC163