Untitled
Abstract: No abstract text available
Text: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS
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Original
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PDF
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PJN1N60D
2002/95/EC
MIL-STD-750
1N60D
700ppm,
1000ppm
100ppm.
|
1N60D
Abstract: PJN1N60D N1N60
Text: PJN1N60D TO-92 600V N-Channel Enhancement Mode MOSFET FEATURES • 0.5A, 600V, RDS ON =15Ω@VGS=10V, ID=0.5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS
|
Original
|
PDF
|
PJN1N60D
2002/95/EC
MIL-STD-750
1N60D
700ppm,
1000ppm
100ppm.
1N60D
PJN1N60D
N1N60
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