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    PK PNP TRANSISTOR SOT 23 Search Results

    PK PNP TRANSISTOR SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    PK PNP TRANSISTOR SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


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    PDF 363/SCâ BC846BPDW1T1 BC847BDPW1T1 BC848BPDW1T1 BC847BPDW1T1 BC847CPDW1T1 BC848CPDW1T1

    BC847BPDW1T1

    Abstract: dual BC847 BC847CPDW1T1
    Text: BC846BPDW1T1, BC847BPDW1T1 Series, BC848BPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1 BC848BPDW1T1 363/SC BC846BPDW1T1 BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC848CPDW1T1 BC846 dual BC847 BC847CPDW1T1

    t1p42

    Abstract: TIP41 SOT323
    Text: MJB41C NPN , MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix)


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    PDF MJB41C MJB42C TIP41 T1P42 TIP41 SOT323

    BC847CPDW1T1

    Abstract: No abstract text available
    Text: BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1 BC848CPDW1T1 OT-363/SC-88 BC846 BC847 BC848 BC847CPDW1T1

    var vdc hfe nv

    Abstract: BCW69 BCW69LT1 BCW70 BCW70LT1
    Text: MOTOROLA Order this document by BCW69LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit


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    PDF BCW69LT1/D BCW69LT1 BCW70LT1 236AB) BCW69LT1/D* var vdc hfe nv BCW69 BCW69LT1 BCW70 BCW70LT1

    mark 12 SOT-363 amplifier

    Abstract: SOT-363 marking BF BC847 SOT363 BC846 BC846BPDW1T1 BC847 BC847BPDW1T1 BC847BPDW1T1G BC847CPDW1T1 BC848
    Text: BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complementary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1 BC848CPDW1T1 OT-363/SC-88 BC846 BC847 BC848 mark 12 SOT-363 amplifier SOT-363 marking BF BC847 SOT363 BC846 BC846BPDW1T1 BC847 BC847BPDW1T1G BC847CPDW1T1 BC848

    BC557

    Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 Temperat30 BC557 BC557 bc556 transistor BC559 BC856 on semiconductor

    MJB44H11

    Abstract: MJB44H11T4 MJB45H11 MJB45H11T4 SMD310
    Text: MJB44H11 NPN , MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http://onsemi.com . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,


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    PDF MJB44H11 MJB45H11 r14525 MJB44H11/D MJB44H11 MJB44H11T4 MJB45H11 MJB45H11T4 SMD310

    SOT-363 marking BF

    Abstract: BC558 BC847 SOT363 BC846 BC846BPDW1T1 BC847 BC847BPDW1T1 BC847BPDW1T1G BC847CPDW1T1 BC848
    Text: BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1 BC848CPDW1T1 OT-363/SC-88 BC846 BC847 BC848 SOT-363 marking BF BC558 BC847 SOT363 BC846 BC846BPDW1T1 BC847 BC847BPDW1T1G BC847CPDW1T1 BC848

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    BC557 sot package sot-23

    Abstract: BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 OT-23 BC557 sot package sot-23 BC557 sot-23 BC558 SOT-23 BC556 sot package sot-23 MARKING 3B SOT23-6 bc557 package sot23 SOT-23 MARKING 50k BC557 sot package PK pnp transistor sot 23 transistor BC559

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    BC847 dual

    Abstract: SOT-363 marking BF BC846 BC846BPDW1T1G BC847 BC847BPDW1T1G BC847BPDW1T2G BC848 BC848CPDW1T1G dual BC847
    Text: BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complementary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.


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    PDF BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G OT-363/SC-88 BC846 BC847 BC848 BC847 dual SOT-363 marking BF BC846 BC846BPDW1T1G BC847 BC847BPDW1T1G BC847BPDW1T2G BC848 BC848CPDW1T1G dual BC847

    BC847CPDW1T1

    Abstract: BC847 dual MARKING GA SOT-363 BC846 BC846BPDW1T1 BC847 BC847BPDW1T1 BC848 BC848BPDW1T1 BC848CPDW1T1
    Text: BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 http://onsemi.com Dual General Purpose Transistors 3 NPN/PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 363/SC BC846BPDW1T1 BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC847CPDW1T1 BC847 dual MARKING GA SOT-363 BC846 BC846BPDW1T1 BC847 BC847BPDW1T1 BC848 BC848BPDW1T1 BC848CPDW1T1

    984 sot-23

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor MMBT6520LT1 PNP Silicon 3 1 2 CASE 318 −08, STYLE 6 SOT−23 TO −236AF MAXIMUM RATINGS Rating COLLECTOR 3 Symbol Value Unit Collector−Emitter Voltage VCEO −350 Vdc Collector−Base Voltage VCBO −350 Vdc


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    PDF MMBT6520LT1 236AF) 984 sot-23

    TIP41 SOT323

    Abstract: TIP41 SOT23 1N5825 MJB41C MJB41CT4 MJB42C MJB42CT4 MSD6100 T1P42 TIP41
    Text: MJB41C NPN , MJB42C (PNP) Preferred Devices Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount http://onsemi.com • Lead Formed for Surface Mount Applications in Plastic Sleeves • • (No Suffix) Lead Formed Version in 16 mm Tape & Reel (“T4” Suffix)


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    PDF MJB41C MJB42C TIP41 T1P42 r14525 MJB41C/D TIP41 SOT323 TIP41 SOT23 1N5825 MJB41C MJB41CT4 MJB42C MJB42CT4 MSD6100

    SOT-363 marking BF

    Abstract: BC557 sot package BC557 pin out BC847CPDW1T1 Dual General Purpose Transistors SC88 T2 BC558 TRANSISTOR uses of bc557 BC846 BC846BPDW1T1 BC847
    Text: BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1 BC848CPDW1T1 OT-363/SC-88 BC846BPDW1T1 BC847BPDW1T1 BC847CPDW1T1 BC848CPDW1T1 BC846 BC847 SOT-363 marking BF BC557 sot package BC557 pin out BC847CPDW1T1 Dual General Purpose Transistors SC88 T2 BC558 TRANSISTOR uses of bc557 BC846 BC846BPDW1T1 BC847

    SBC847BPDW1T1G

    Abstract: SBC846BPDW1T1G BC556 SOT MARK 37 sot363 BC847 SOT363
    Text: BC846BPDW1T1G, SBC846BPDW1T1G, BC847BPDW1T1G, SBC847BPDW1T1G Series, BC848CPDW1T1G Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complementary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC846BPDW1T1G, SBC846BPDW1T1G, BC847BPDW1T1G, SBC847BPDW1T1GSeries, BC848CPDW1T1G OT-363/SC-88 OT-363 AEC-Q101 BC846BPDW1T1/D SBC847BPDW1T1G SBC846BPDW1T1G BC556 SOT MARK 37 sot363 BC847 SOT363

    transistor marking wt

    Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage


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    PDF MPS6521* MPS6523 MPS6521 MPS6523 CAS218A MSC1621T1 MSC2404 MSD1819A transistor marking wt motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819

    BC846 SOT-363

    Abstract: BC847CPDW1T1 BC847 SOT363
    Text: BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 http://onsemi.com Dual General Purpose Transistors 3 NPN/PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 363/SC BC846BPDW1T1 BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC846 SOT-363 BC847CPDW1T1 BC847 SOT363

    SBC847BPDW1T1G

    Abstract: SBC846BPDW1T1G BF transistor mark sot 363 37 BC846BPD
    Text: BC846BPDW1T1G, SBC846BPDW1T1G, BC847BPDW1T1G, SBC847BPDW1T1G Series, BC848CPDW1T1G Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals Complementary These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC846BPDW1T1G, SBC846BPDW1T1G, BC847BPDW1T1G, SBC847BPDW1T1GSeries, BC848CPDW1T1G OT-363/SC-88 OT-363 AEC-Q101 BC846BPDW1T1/D SBC847BPDW1T1G SBC846BPDW1T1G BF transistor mark sot 363 37 BC846BPD

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Low Noise Transistor MMBT5087LT1 PNP Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −50 Vdc Collector−Base Voltage VCBO −50 Vdc Emitter−Base Voltage VEBO −3.0 Vdc IC −50 mAdc Collector Current — Continuous


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    PDF MMBT5087LT1