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Catalog Datasheet	MFG & Type	Document Tags	PDF
IS62WV102416BLL-25TI Abstract: No abstract text available Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL ISSI 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin PK13197T48 IS62WV102416BLL-25TI	PDF
Untitled Abstract: No abstract text available Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity	Original	IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin 25BSC 75BSC	PDF
Untitled Abstract: No abstract text available Text: ISSI PACKAGING INFORMATION Plastic TSOP - 48 pins Package Code: T Type I A A1 1 N E b e D1 SEATING PLANE D Lα Plastic TSOP (T - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 48 A — 1.20 — 0.047 A1 0.05 0.15 0.002 0.006 b 0.17 0.27 0.007 0.011	Original	PK13197T48	PDF
IS62WV102416BLL-25MLI Abstract: IS62WV102416BLL-25TLI IS62WV102416BLL IS62WV102416ALL IS62WV102416ALL-35MLI Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity	Original	IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin 25BSC 207BSC IS62WV102416BLL-25MLI IS62WV102416BLL-25TLI IS62WV102416BLL IS62WV102416ALL IS62WV102416ALL-35MLI	PDF
Untitled Abstract: No abstract text available Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL ISSI 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin PK13197T48	PDF
Untitled Abstract: No abstract text available Text: IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL IS61WV102416ALL) IS61/64WV102416BLL) 48-ball 48-pin PK13197T48 MO-207	PDF
IS62WV102416BLL-25TI Abstract: No abstract text available Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL ISSI 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin PK13197T48 IS62WV102416BLL-25TI	PDF
IS61WV102416BLL-10TLI Abstract: IS61WV102416BLL-10TI IS61WV102416BLL-10MLI IS61WV102416BLL IS61WV102416ALL-20MI 0031B IS61WV102416ALL-20TI IS61WV102416BLL-10MI IS61WV102416ALL IS64WV102416BLL Text: IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL ISSI 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL IS61WV102416ALL) IS61/64WV102416BLL) 48-ball 48-pin PK13197T48 IS61WV102416BLL-10TLI IS61WV102416BLL-10TI IS61WV102416BLL-10MLI IS61WV102416BLL IS61WV102416ALL-20MI 0031B IS61WV102416ALL-20TI IS61WV102416BLL-10MI IS61WV102416ALL IS64WV102416BLL	PDF
IS61WV102416BLL-10MLI Abstract: is61wv102416all-20mi IS61WV102416ALL IS61WV102416BLL-10TI IS61WV102416BLL IS64WV102416BLL IS61WV102416BLL-10T IS61WV102416BLL-10MI is61wv102416bll-10tli Text: IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL ISSI 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL IS61WV102416ALL) IS61/64WV102416BLL) 48-ball 48-pin PK13197T48 IS61WV102416BLL-10MLI is61wv102416all-20mi IS61WV102416ALL IS61WV102416BLL-10TI IS61WV102416BLL IS64WV102416BLL IS61WV102416BLL-10T IS61WV102416BLL-10MI is61wv102416bll-10tli	PDF
IS61WV102416ALL Abstract: IS61WV102416BLL-10MI IS61WV102416 Text: IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater	Original	IS61WV102416ALL IS61WV102416BLL IS64WV102416BLL IS61WV102416ALL) IS61/64WV102416BLL) 48-ball 48-pin PK13197T48 IS61WV102416BLL-10MI IS61WV102416	PDF
IS62WV102416BLL-25MLI Abstract: IS62WV102416BLL-25TLI IS62WV102416BLL IS62WV102416ALL IS62WV102416ALL-35MI IS65WV102416BLL-25MA3 IS62WV102416ALL-35MLI Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity	Original	IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin PK13197T48 MO-207 IS62WV102416BLL-25MLI IS62WV102416BLL-25TLI IS62WV102416BLL IS62WV102416ALL IS62WV102416ALL-35MI IS65WV102416BLL-25MA3 IS62WV102416ALL-35MLI	PDF
MAX714 Abstract: No abstract text available Text: IS5F ¡ IB 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION JULY 1997 Industrial Temperature Operation 40°C to +85°C • High-Performance Read	OCR Scan	x8/x16 32-bit 16-KB 96-KB 128-KB PK13197T48 MAX714	PDF
24197 Abstract: FL003 T4423 BLV38 Text: ISSF fê * » V /B L V 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION JULY 1997 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Read Maximum Access Times	OCR Scan	x8/x16 32-bit 16-KB 96-KB 128-KB PK13197T48 24197 FL003 T4423 BLV38	PDF
Untitled Abstract: No abstract text available Text: ISSI IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation High-Performance Read Maximum Access Times — 5V: 60/80/120 ns — 3V: 110/150/180 ns	OCR Scan	IS28F200BV/BLV x8/x16 32-bit 16-KB 96-KB 128-KB PK13197T48 TDQ4404	PDF