L6 TRANSISTOR
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
L6 TRANSISTOR
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2SC1623
Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.
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2SC1623
200TYP
OT-23
BL/SSSTC0018
2SC1623
L6 TRANSISTOR
sot23 MARKING CODE L6
marking L6 sot23
L5 SOT23
l5 transistor
sot23 L4 marking
marking l4 sot-23
l6 sot23
l7 sot-23
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BLV91
Abstract: ferroxcube 1988 mda406 MDA401
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in
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BLV91/SL
OT-172D)
BLV91
ferroxcube 1988
mda406
MDA401
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
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BY206
Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW32
BY206
BZY88
BZY88-C3V3
BLW32
BZY88C-3V3
2222 809 05003
MGP430
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BY206
Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW34
BY206
C102F
BZY88-C3V3
BLW34
BZY88C-3V3
100A-2RO-C-PX-50
uhf amplifier design Transistor
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capacitor 2200 uF
Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a
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BLT82
OT96-1
MAM227
capacitor 2200 uF
philips resistor 2322 156
BLT82
UHF TRANSISTOR
2322 156 philips
SMD ic catalogue
200B
BC817
TRANSISTOR SMD L3
SMD TRANSISTOR L6
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bfg97
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
bfg97
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transistor rf m 1104
Abstract: UHF TRANSISTOR TRIMMER capacitor 5-60 pF BLU97
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU97 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor designed for use in mobile
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BLU97
OT122A)
transistor rf m 1104
UHF TRANSISTOR
TRIMMER capacitor 5-60 pF
BLU97
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BLW33
Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW33
BLW33
BY206
BZY88-C3V3
SOT122A
BZY88C-3V3
application note blw33
BZY88
npn transistor dc 558
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transistor D 2578
Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting
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BLW90
SC08a
transistor D 2578
BLW90
transistor Common Base configuration
transistor rf m 1104
4312 020 36640
transistor 4312
philips carbon film resistor
UHF TRANSISTOR
UHF transistor GHz
philips transistor handbook
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MDA337
Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope
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BLU60/12
OT-119
MDA337
2395 transistor
GP605
class b power transistors datasheet current gain
sot-119
b1w3
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BFG97
Abstract: BFG31 TRANSISTOR BFg97 sc7313
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223
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BFG97
OT223
BFG31.
MSB002
OT223.
R77/02/pp16
BFG97
BFG31
TRANSISTOR BFg97
sc7313
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BFG135 amplifier
Abstract: BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
MBB285
MBB287
BFG135 amplifier
BFG135 A amplifier
BFG135 TRANSISTOR
BFG135
MEA946
MEA945
MBB298
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thickness of microstripline
Abstract: BFG31 BFG97 MBB773
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor
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BFG97
OT223
BFG31.
MSB002
OT223.
thickness of microstripline
BFG31
BFG97
MBB773
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MDA342
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope
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BLU45/12
OT-119
MDA342
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bfg135 application note
Abstract: bfg135 bfg135sot223 BFG135 amplifier TRANSISTOR GENERAL DIGITAL L6 BFG135,115
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
BFG135
MSB002
OT223.
R77/03/pp16
771-BFG135-T/R
bfg135 application note
bfg135sot223
BFG135 amplifier
TRANSISTOR GENERAL DIGITAL L6
BFG135,115
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BFG135 amplifier
Abstract: SC7313 BFG135 bfg135 application note MBB298
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope,
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BFG135
OT223
MSB002
R77/03/pp16
BFG135 amplifier
SC7313
BFG135
bfg135 application note
MBB298
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
R77/03/pp14
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122d transistor
Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLU11/SL
OT-122D)
122d transistor
SL 100 NPN Transistor
MDA309
122d
SL 100 NPN Transistor base emitter collector
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended
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BFG198
OT223
MSB002
OT223.
R77/03/pp14
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12w 5d
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3629 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC3629 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band 7.2 volts operation applications. Dimensions in mm FEATURES
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2SC3629
2SC3629
520MHz,
12w 5d
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transistor tic 106
Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has
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BLV935
OT273
OT273
OT273.
110fl2ti
transistor tic 106
Philips 2222-030
38109
heatsink catalogue
BLV935
chip die npn transistor
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2SC3019
Abstract: 4D6T T02E
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band. FEATURES • • • • • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, V cc = 12.5V
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2SC3019
520MHz,
j56i2
2SC3019
100mW
100pF,
560pF,
4D6T
T02E
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