PLUSE Search Results

4001

Abstract: 6032 tca 4001
Contextual Info: Part Number Change 251, TCA, TCB, ACA series Item Change 1 Change of case profile "Code" to "Height or 2digit number" plus "Code". Part Number Change New Case Code：＊ ＊ Ｓ Example （2 digits Height pluse Case Size TCA series with standard height never print 2 digit code.

SCR 131- 6 WJ 60

Abstract: SCR 131- 6 WJ 59 SCR 131- 6 WJ 68 6818 RTC 8V92 CDP6805
Contextual Info: O HARRIS CDP6 8 1 8 CMOS Real-Tim e Clock With RAM Jan u a ry 19 91 F e a tu re s D e s c rip tio n • • • • • • The C D P6818 Real-Time Clock pluse RAM is a peripheral device which includes the unique MOTEL concept for use with many 8 bit microprocessors, microcomputers, and larger

DAN222

Contextual Info: DAN222 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 70V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 0.4 0.95 0.95 2.9 1.9 2.4

W91360N

Abstract: 18-PIN 20-PIN W91360 W91360A W91360AN MUTE DTMF
Contextual Info: W91360N SERIES 3-MEMORY TONE/PULSE DIALER WITH HANDFREE AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91360N series are tone/pluse switchable telephone dialers with three memories, hold function, and a handfree dialing control circuit. Fabricated using CMOS technology, the W91360N series offer good

BC847

Abstract: BC846-BC848 NPN CBO 40V CEO 25V EBO 5V BC846 BC848
Contextual Info: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C

ECWH V

Abstract: RoHS 15 13 metallized film pluse capacitors
Contextual Info: Plastic Film Capacitors Metallized Polypropylene Film Capacitor Type : ECWH V Designed for high frequency and pluse applications. •Features • Low-loss and inherent tempereature rise • Excellent electrical characteristics • Flame-retardant epoxy resin coating

Contextual Info: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER

BC846-BC848

Abstract: BC846 BC847 BC848
Contextual Info: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C

BAL99LT1

Contextual Info: BAL99LT1 SWITCHING DIODE Features Power dissipation 。 P D : 350 mW Tamb=25 C Pluse Drain I F : 100 mA Reverse Voltage V R : 70V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR

MMBT2907LT1

Contextual Info: MMBT2907LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.6 mA Reverse Voltage V (BR)CBO : -60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

BAS19LT1

Contextual Info: BAS19LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 120V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER 3.COLLECTOR

2n7002 SOT23-3

Abstract: 2N7002 2N7002LT1
Contextual Info: 2N7002 MOSFET N - Channel Features Power dissipation 。 P D : 0.35 W (Tamb=25 C) Pluse Drain I D : 1300 mA Reverse Voltage V DS : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.GATE 2.SOURCER

2SC1623

Abstract: L4 SOT23-3 TRS1623
Contextual Info: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

2032A

Contextual Info: • B p i CDP6818 HARRIS CMOS Real-Time Clock With RAM J an u a ry 1 9 9 1 Features D escription • Low P ow er, High S p e e d , High D ensity C M O S T h e C D P 6 8 1 8 R e a l-T im e C lo c k pluse RAM is a peripheral d evice which includes t h e ' unique

1N5819

Abstract: RT9568 RT9568CN RT9568CS icl 7366
Contextual Info: RT9568 PSM DC-to-DC Controller General Description Features The RT9568 is a DC-to-DC controller IC for step- • Pluse-Skipping Modulation down Buck , step-up (Boost), inverting (Buck- • Precision ±2% Reference Boost), and Flyback converters. • Operation from 3.0V to 30V Input

debounce time

Abstract: telephone keypad interface circuit with dtmf 4 digit dial keyboard CIRCUIT diagram 18-PIN 20-PIN W91360 W91360A W91360AN W91360N
Contextual Info: W91360N SERIES 3-MEMORY TONE/PULSE DIALER WITH HANDFREE AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91360N series are tone/pluse switchable telephone dialers with three memories, hold function, and a handfree dialing control circuit. Fabricated using CMOS technology, the W91360N series offer good

BAV99LT1

Abstract: A7 DIODE
Contextual Info: BAV99LT1 SWITCHING DIODE Features Power dissipation 。 P D : 225 mW Tamb=25 C Pluse Drain I F : 215 mA Reverse Voltage V R : 70V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 0.4 0.95 0.95 2.9 1.9

ECWH16103V

Contextual Info: Plastic Film Capacitors Metallized Polypropylene Film Capacitor Type : ECWH V Designed for high frequency and pluse applications. •Features • Low-loss and inherent tempereature rise • Excellent electrical characteristics • Flame-retardant epoxy resin coating

L4 SOT23-3

Abstract: 2SC1623 npn sot23 l6 L5 SOT23-3
Contextual Info: 2SC1623 TRS1623 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.2 W (Tamb=25 C) Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : 60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

MMBT2907LT1

Abstract: marking M2B
Contextual Info: MMBT2907LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.6 mA Reverse Voltage V (BR)CBO : -60V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE

W91340N

Contextual Info: W91340N SERIES SVinbond Electronics Corp. lO-MEMORY TONE/PULSE DIALER WITH HANDFREE AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91340N series are tone/pluse switchable telephone dialers with ten memories, hold function, and a handfree dialing control circuit. Fabricated using CMOS technology, the W91340N series offer good

Contextual Info: W91360N SERIES i.lV in b o n d E lectronics Corp. 3-MEMORY TONE/PULSE DIALER WITH HANDFREE AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91360N series are tone/pluse switchable telephone dialers with three memories, hold function, and a handfree dialing control circuit. Fabricated using CMOS technology, the W91360N series offer good

ECWHA3C132

Abstract: ECWHA3C473 ECWHA3C332 RH-A4
Contextual Info: Plastic Film Capacitors Metallized Polypropylene Film Capacitors Type: ECWH A Designed for high frequency and pluse applications. •Features •Small size •Excellent electrical characteristics •Low loss •Low Hum Sound Noise •Flame-retardant epoxy resin coating

Contextual Info: Plastic Film Capacitors Metallized Polypropylene Film Capacitors Type: ECWH A Designed for high frequency and pluse applications. •Features •Small size •Excellent electrical characteristics •Low loss •Low Hum Sound Noise •Flame-retardant epoxy resin coating