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    NXP Semiconductors PMV22EN,215

    MOSFET N-CH 30V 5.2A TO236AB
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    DigiKey PMV22EN,215 Reel
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    Bristol Electronics PMV22EN,215 2,067
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    Quest Components PMV22EN,215 1,653
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    PMV22EN Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PMV22EN NXP Semiconductors 30 V, 5.2 A N-channel Trench MOSFET Original PDF
    PMV22EN,215 NXP Semiconductors PMV22EN - 30 V, 5.2 A N-channel Trench MOSFET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF
    PMV22EN,215 TY Semiconductor MOSFET N-CH 30V 5.2A - SOT-23 Original PDF

    PMV22EN Datasheets Context Search

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    Abstract: No abstract text available
    Text: Product specification PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV22EN O-236AB)

    PMV22EN

    Abstract: No abstract text available
    Text: SO T2 3 PMV22EN 30 V, 5.2 A N-channel Trench MOSFET Rev. 1 — 30 March 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV22EN O-236AB) gate-source12 PMV22EN

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    NX3008NBKMB

    Abstract: No abstract text available
    Text: AN11159 Distributed power in portable devices Rev. 2 — 27 April 2012 Application note Document information Info Content Keywords distributed power, Low DropOut LDO regulators, DC-to-DC converter, load switch, quiescent current, load current Abstract This document describes concepts for portable appliances using


    Original     		PDF AN11159 NX3008NBKMB

    BSS84AKS

    Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
    Text: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9


    Original     		PDF