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    PN JUNCTION DIODE OSCILLATOR Search Results

    PN JUNCTION DIODE OSCILLATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PN JUNCTION DIODE OSCILLATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PN Junction Diode varactor

    Abstract: varactor diode fm GaAs varactor diode Linearizer varactor diode notes FM tuning capacitor HYPERABRUPT tuning capacitors varactor diode datasheet varactor high power
    Text: Application Note Turning Varactors Introduction Tuning varactors are voltage variable capacitors designed to provide electronic tuning of oscillators and filters. The two semiconductor materials used are silicon and gallium arsenide. Silicon typically offers lower


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    BD9897FS

    Abstract: BD9897 bd9897f dc-ac inverter Controller PWM
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８９７ＦＳ FUNCTION ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 36V High voltage process 1ch control with Full-Bridge Lamp current and voltage sense feed back control


    Original     		PDF BD9897FS R0039A BD9897 bd9897f dc-ac inverter Controller PWM

    DC-AC Power Inverter an

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８８８ＦＢＤ９８８８ＦＶ FUNCTION ・2ch control with Push-Pull ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control


    Original     		PDF BD9888F BD9888FV R0039A DC-AC Power Inverter an

    BD9890FV

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８９０ＦＶ FUNCTION ・2ch control with Push-Pull ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control


    Original     		PDF BD9890F BD9890FV R0039A

    burst fire control ic

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８９０Ｆ FUNCTION ・2ch control with Push-Pull ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control


    Original     		PDF BD9890F BD9890FV R0039A burst fire control ic

    BD9889

    Abstract: BD9889FV bd9889f IC A 2388
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８８９ＦＶ FUNCTION ・2ch control with Push-Pull ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control


    Original     		PDF BD9889FV R0039A BD9889 bd9889f IC A 2388

    SURFACE MOUNT DIODES MIL GRADE

    Abstract: Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar
    Text: Applications • PCN mixers and circuits, or detectors in low power, fast switching point-to-point millimeterwave radios, collision avoidance automotive radars, adaptive cruise control radar systems, etc. Features • Designed for highvolume designs • High frequency


    Original     		PDF BRO373-09A SURFACE MOUNT DIODES MIL GRADE Schottky diode Die flip chip high frequency mixer APN3001 BRO373-09A DMK2308-000 DMK2790-000 PN junction diode in mil grade RF Microwave schottky Diode mixer adaptive cruise control radar

    pn junction diode ideality factor

    Abstract: ku-band lnb lnb schematic diagram mixer lnb W02 diode BAT15-04W lnb ku AN198 block diagram of schottky diode Universal lnb ku
    Text: BA T1 5 -0 4 W Th e L o w Ba r ri e r Sc h o ttk y Di o d e BA T1 5 -0 4 W a s a Mi xe r f o r Ku -Ba n d L N Bs Ap p l i c a ti o n N o te A N 1 9 8 Revision: Rev. 1.0 2010-09-29 RF a n d P r o te c ti o n D e vi c e s Edition 2010-09-29 Published by Infineon Technologies AG


    Original     		PDF AN198, BAT15-04W BAT15-04W AN198 pn junction diode ideality factor ku-band lnb lnb schematic diagram mixer lnb W02 diode lnb ku AN198 block diagram of schottky diode Universal lnb ku

    gold metal detectors

    Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
    Text: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes. The


    Original     		PDF AN988, 26/IB gold metal detectors IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


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    Photo diode TFK S 186 P

    Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
    Text: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    diode hp 2800 SMD

    Abstract: diode hp 2800 smd schottky diode T4 HSMP-2810 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751
    Text: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-2805 HSMS-2807 HSMS-2808 HSMP-2810 HSMS-2812 HSMS-2813 diode hp 2800 SMD diode hp 2800 smd schottky diode T4 gold metal detectors diode hp 2810 HSMS-2862 TAG 9101 Waveform Clipping With Schottky diode hp 5082-2751

    FMCW Radar

    Abstract: 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW
    Text: Low Barri er RF Sch ottk y Dio d e BAT2 4 Mi xe r f or FMCW Ra dar at 2 4 GHz Application Note AN190 Revision: V1.0 Date: 22-01-2010 RF and Protecti on Devi c es Edition 15-02-2010 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		PDF AN190 AN190, 24GHz BAT24: FMCW Radar 77GHz Radar infineon FMCW sensor radar 24ghz AN190 diagram radar circuit 77GHz circulator Types of Radar Antenna FMCW circuit FMCW

    varistor 6kv

    Abstract: METAL OXIDE VARISTOR application note on AC mains SURGE ARRESTER spark gap metal oxide varistor 500V METAL OXIDE VARISTOR application note on AC MOV 103 M 3 KV harris varistors MOV surge on AC mains C280Ae Triggered spark gap
    Text: Harris Semiconductor No. AN9310 Harris MOVs March 1995 Surge Suppression Technologies Advantages and Disadvantages MOVs, SADs, Gas Tubes, Filters and Transformers Author: Martin P. Corbett Synopsis Protection on the low voltage AC mains system from transient overvoltages is now a fundamental power quality


    Original     		PDF AN9310 DB450. varistor 6kv METAL OXIDE VARISTOR application note on AC mains SURGE ARRESTER spark gap metal oxide varistor 500V METAL OXIDE VARISTOR application note on AC MOV 103 M 3 KV harris varistors MOV surge on AC mains C280Ae Triggered spark gap

    AVERAGE QUASI PEAK AND PEAK DETECTOR

    Abstract: nixie tube circuit
    Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction


    OCR Scan     		PDF

    2N3980

    Abstract: No abstract text available
    Text: MO T O R O L A SC DIODES/O PTO I 35E D •.* b 3 k ? S 5 5 OOflOlOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PN Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator


    OCR Scan     		PDF b3b7S55 2N3980 35inimum 2N3980

    2N4948

    Abstract: 2N4949 SCR 30v triggering circuit motorola eb20 22A01 motorola opto scr Unijunction EB20 MOTOROLA 2N4949
    Text: MOTOROLA SC DIODES/OPTO ESE D b3b?aSS 0000=130 _ 4 T*3 7~*L 2 N 4 94 8 2 INI494 9 PN Unijunction Transistors Silicon PN Unijunction Transistors . . . designed for m ilitary and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast


    OCR Scan     		PDF 2N4948 2N4949 2N4948 N4949 2A-01 2N4949 SCR 30v triggering circuit motorola eb20 22A01 motorola opto scr Unijunction EB20 MOTOROLA 2N4949

    unijunction transistor

    Abstract: No abstract text available
    Text: M O T O R O L A SC D IOD ES/ OP TO 35E D • . ‘t 3 t 7 a S S OOflCnOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PIM Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator


    OCR Scan     		PDF 2N3980 unijunction transistor

    Ujts

    Abstract: No abstract text available
    Text: M O T O R O L A SC DIODES/OPTÔ BSE I> • b3b7SSS 0ÜÖ1213 3 ■ 7-37-Ä/ M U10 M U20 PN Unijunction Transistors Silicon Annular Unijunction Transistors . . . d esig n ed fo r eco n o m ica l, general purp ose use in pulse, tim in g, oscillator and PN UJTs


    OCR Scan     		PDF

    silicon epitaxial mesa diode

    Abstract: construction of varactor diode Parametric Varactor diodes
    Text: GEC PLES S EY S l M I t . O % I U C I O K S CT3501-1.2 TUNING VARACTORS - INTRODUCTION INTR O D U C TIO N Varactor tuning diodes are voltage variable capacitors, designed to provide electronic tuning of oscillators and filters. The device employs the variable depletion capacitance of a


    OCR Scan     		PDF CT3501-1 13GHz silicon epitaxial mesa diode construction of varactor diode Parametric Varactor diodes

    IN5711

    Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
    Text: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear diode is similar to point contact diodes


    OCR Scan     		PDF AN988, 26/Th IN5711 Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes

    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		PDF CT3508-1 backward diode tunnel diode General Electric "backward diode"

    HSMS0001

    Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
    Text: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc­ tor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes.


    OCR Scan     		PDF 26/Ig HSMS0001 Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode

    5964-3898E

    Abstract: Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5966-0784E Diodo b4 HSMS-2862 HSMS-2813 diode hp 2800 SMD zero bias schottky diode detector
    Text: w ag H EW L E T T mLHA PA CK A R D Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest Hewlett-Packard authorized distributor or representative. Technical information is also available on the WWW at:


    OCR Scan     		PDF HSMS-2800 HSMS-2802 HSMS-2803 HSMP-2810 HSMS-2812 HSMS-2813 HSMS-2807 HSMS-2808 HSMS-2S17 HSMS-2818 5964-3898E Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5966-0784E Diodo b4 HSMS-2862 diode hp 2800 SMD zero bias schottky diode detector