pn junction diode structure
Abstract: PIN diode
Text: Section 2 PIN Diode Features A PIN diode has an intrinsic semiconductor layer I layer in the middle of the PN junction, which makes it a diode with a P-I-N junction. It is a high frequency variable resistor that can change its high frequency series resistance (rf) by controlling the forward current applied to the junction.
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SBJ200-04J
Abstract: No abstract text available
Text: SBJ200-04J Ordering number : EN8969 SBJ200-04J Schottky Barrier Diode Twin Type • Cathode Common 40V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure.
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SBJ200-04J
EN8969
SBJ200-04J
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SBJ200-06J
Abstract: No abstract text available
Text: SBJ200-06J Ordering number : ENA0193 SBJ200-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 20A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure.
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SBJ200-06J
ENA0193
A0193-3/3
SBJ200-06J
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Untitled
Abstract: No abstract text available
Text: SBJ100-06J Ordering number : ENA0192A SBJ100-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers) Features • • • • Small reverse current (IR typ=5 A) due to adoption of MRJ (Multi Refined PN Junction) structure
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ENA0192A
SBJ100-06J
A0192-3/3
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SBJ100-06J
Abstract: No abstract text available
Text: SBJ100-06J Ordering number : ENA0192 SBJ100-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 10A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • Small reverse current (IR typ=5µA) due to adoption of MRJ (Multi Refined PN Junction) structure.
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SBJ100-06J
ENA0192
A0192-3/3
SBJ100-06J
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pn junction diode
Abstract: p-n junction diode pn junction diode structure
Text: Application Note Power-Up Behavior of ProASIC 500K Devices I n tro du ct i on Actel’s ProASIC Flash family offers a number of desirable characteristics during power up. ProASIC family devices remain live at power up, and no configuration device is required due to the nonvolatile structure of Actel FPGAs. In
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BPW-20R
Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200
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TSAL6200
Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si
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uv phototransistor
Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Text: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200
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14-Apr-04
uv phototransistor
8602 rectifier
photodiode ge
uv photodiode, GaP
TSAL6200
ga09
80086
"photoconductive" 1015
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uv phototransistor
Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Text: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200
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BPW21R
Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Text: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al
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pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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BD9897FS
Abstract: BD9897 bd9897f dc-ac inverter Controller PWM
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８９７ＦＳ FUNCTION ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 36V High voltage process 1ch control with Full-Bridge Lamp current and voltage sense feed back control
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BD9897FS
R0039A
BD9897
bd9897f
dc-ac inverter Controller PWM
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DC-AC Power Inverter an
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE ＢＤ９８８８ＦＢＤ９８８８ＦＶ FUNCTION ・2ch control with Push-Pull ・Lamp current and voltage sense feed back control ・Sequencing easily achieved with Soft Start Control
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BD9888F
BD9888FV
R0039A
DC-AC Power Inverter an
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PD-37BRC
Abstract: infrared circuit diagram
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-37BRC 1. General Description: Dimensions The PD-37BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, water clear plastic epoxy, and end looking package. The lens effect allows an acceptance angle
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PD-37BRC
PD-37BRC
---T80
500Lux
400LUX
200Lux-
infrared circuit diagram
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PD-34BRC
Abstract: No abstract text available
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-34BRC 1. General Description: Dimensions The PD-34BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, water clear plastic epoxy, and end looking package. The lens effect allows an acceptance angle
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PD-34BRC
PD-34BRC
500L/UX
300Lux
200LUX
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PD-34BRD
Abstract: No abstract text available
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-34BRD 1. General Description: Dimensions The PD-34BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black plastic epoxy, and end looking package. The lens effect allows an acceptance angle of ±15°
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PD-34BRD
PD-34BRD
400LUX
200LUX
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2ACE
Abstract: PD-52BRD infrared circuit diagram
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-52BRD 1. General Description: Dimensions The PD-52BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black epoxy, and end looking package. The lens effect allows an acceptance angle of ±25° measured
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PD-52BRD
PD-52BRD
2ACE
infrared circuit diagram
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PD-32BRC
Abstract: Photo diode circuit diagram cm2215
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-32BRC 1. General Description: Dimensions The PD-32BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and end looking package. The lens effect allows an acceptance angle of ±16° measured
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PD-32BRC
PD-32BRC
-25CC
300Lux
200Lux
Photo diode circuit diagram
cm2215
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PD-42BRC
Abstract: No abstract text available
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-42BRC 1. General Description: Dimensions The PD-42BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and side looking package. The lens effect allows an acceptance angle of ±30° measured
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PD-42BRC
PD-42BRC
2856K.
75R-1
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PD-32BRD
Abstract: 1050nm Waitrony
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-32BRD 1. General Description: Dimensions The PD-32BRD consists of a PN junction silicon photo diode with PIN structure mounted in a lens, black epoxy, and end looking package. The lens effect allows an acceptance angle of ±16° measured
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PD-32BRD
PD-32BRD
2856K.
2-PD-32BRD
1050nm
Waitrony
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Photo diode circuit diagram
Abstract: PD-52BRC
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-52BRC 1. General Description: Dimensions The PD-52BRC consists of a PN junction silicon photo diode with PIN structure mounted in a lens, clear epoxy, and end looking package. The lens effect allows an acceptance angle of ±25° measured
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PD-52BRC
PD-52BRC
2856K.
000Lux
400LUX
300LUX
200Lux.
Photo diode circuit diagram
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Lo5 SMD
Abstract: PD-S32M
Text: Waitrony Infrared Pin Photo Diode Model No.: PD-S32M 1. General Description: Dimensions The PD-S32M consists of a PN junction silicon photo diode with PIN structure mounted in a black epoxy, SOT-23 SMD package. 1 -3 .0 + 0 .1 5 — 1.9±0.1—[ —-4 o .9 5 f—
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PD-S32M
OT-23
PD-S32M
Lo5 SMD
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PC923 equivalent
Abstract: ST ZO 103 TRIAC triac zo 109 ma triac ZO 109 st triac ZO 109 PC922 equivalent S202S02 application S216S02 Application note PC851 equivalent TRIAC ZO 103 MA
Text: General Description of Optoelectronic Devices 2-1 General Description of Optoelectronic Devices 2-1-1 Infrared Emitting Diode LED * 1-24 , =— (1 ) Operating principle The infrared L E D utilizes the PN junction of gallium arsenide (G aA s) crystals.
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S101D01
S102S01
112S01/S116S01
S10211)
PC923 equivalent
ST ZO 103 TRIAC
triac zo 109 ma
triac ZO 109 st
triac ZO 109
PC922 equivalent
S202S02 application
S216S02 Application note
PC851 equivalent
TRIAC ZO 103 MA
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