PN2222A
Abstract: 1041A
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PN2222A NPN switching transistor 1999 May 21 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PN2222A FEATURES
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PN2222A
PN2907A.
115002/00/03/pp8
PN2222A
1041A
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r2f transistor
Abstract: marking R2F PN2907A SST2907A MMST2222A MMST2907A SST2222A UMT2222A UMT2907A R2F marking
Text: UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor Switching UMT2907A / SST2907A / MMST2907A / PN2907A •Features •External dimensions (Units: mm) 1) BV ceo< -60V (lc=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A / PN2222A.
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UMT2907A
SST2907A
MMST2907A
PN2907A
UMT2907A/
SST2907A/
MMST2907A/
-10mA)
UMT2222A
r2f transistor
marking R2F
PN2907A
MMST2222A
SST2222A
R2F marking
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Untitled
Abstract: No abstract text available
Text: PN2907A PNP SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and General Purpose Amplifier Applications Complementary NPN Type Available PN2222A KM hM TO-92
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PN2907A
PN2222A)
MIL-STD-202,
DS11201
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PN2222A le
Abstract: 100khz 5v transistor npn LC 300-S PN2222 PN2222A PN2907A
Text: PN2222A NPN SMALL SIGNAL TRANSISTOR Features Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available PN2907A KM h M TO-92 Mechanical Data
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PN2222A
PN2907A)
MIL-STD-202,
150mA,
500mA,
100kHz,
100MHz
100nA,
PN2222A le
100khz 5v transistor npn
LC 300-S
PN2222
PN2222A
PN2907A
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PN2222A le
Abstract: PN2222A
Text: PN2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR - • Collector-Emitter Voltage: V Ce o = 4 0 V • Collector Dissipation: Pc max =625mW to -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO 75 40 6 600
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PN2222A
625mW
PN2222A le
PN2222A
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Untitled
Abstract: No abstract text available
Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50
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Transistors/TO-92
2N4124
2N5172
2N5088
PN2222A
2N3904
2N4401
MPSA05/ITTA05
MPSA06/ITTA06
2N5551
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Untitled
Abstract: No abstract text available
Text: PN2222 PN2222A _y SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 package prim arily intended for linear and switching applications. P-N-P complement is PN2907/2907A. Q UICK REFERENCE D A T A
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PN2222
PN2222A
PN2907/2907A.
100kf2
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st2222a
Abstract: RXT2222A st 2222A transistor 2222a transistor 2222a to-92 r1p 11 TRANSISTOR sst2222a pn 2222a
Text: Transistors I NPN Medium Power Transistor Switching UMT2222A/SST2222A/MMST2222A/RXT2222A/PN2222A •Features •External dimensions (Units : mm) 1 } B V ceo< 4 0 V ( ¡c ~ 1 0 rn A ) 2 ) Com plem ents the U M T 2907A /S ST2907A /M M ST2907A /RXT2907A/PN 2907A.
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2222A/SST2222A/MMST2222A/RXT2222A/PN2222A
ST2907A
/RXT2907A/PN
UMT2222A
SST2222A
MMST2222A
RXT2222A
PN2222A
T2222A
st2222a
st 2222A
transistor 2222a
transistor 2222a to-92
r1p 11 TRANSISTOR
pn 2222a
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2N3904 pin diagram
Abstract: ic pin diagram diodes inc 2N5551 2N3906 pin diagram 2N5551 diodes inc BC547 ITTA05 to-92 type 2n5401 2n3904 2N3904
Text: Lead M ounted Transistors NPN Transistors/TO-92 VCEO Volts 25 25 30 40 40 40 60 80 160 300 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 M PS A05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 hpE @ VCE/IC V/mA 1/2 120-360 10/10 100-750 350-1400 5/1 100-300 10/150
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Transistors/TO-92
2N4124
2N5172
N5088
PN2222A
2N3904
2N4401
A05/ITTA05
MPSA06/ITTA06
2N5551
2N3904 pin diagram
ic pin diagram
diodes inc 2N5551
2N3906 pin diagram
2N5551 diodes inc
BC547
ITTA05
to-92 type
2n5401 2n3904
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CT PN2222A
Abstract: No abstract text available
Text: ¡k SAMSUNG ELE CT RONICS INC PN2222A 42E P H 7*^4142 00CHG7S T I SMGK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • C ollector-Em itter Voltage: V Ce o = 4 0 V • C o lle cto r D issip atio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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PN2222A
00CHG7S
CT PN2222A
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MMST2907A
Abstract: PN2907A RXT2907A SST2907A T106 UMT2907A rxt2907 TO-126F AGt marking code
Text: Transistors PNP Medium Power Transistor Switching I UM T2907A / SST2907A/M M ST2907A / RXT2907A / PN2907A •F e a tu r e s •E x te r n a l dim ensions (Units : mm) 1) BVceo<—40V ( l c = — 10mA) 2 ) Complements the UMT2222A/SST2222A/MMST2222A/ RXT2222A/PN2222A.
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UMT2907A
SST2907A/MMST2907A
RXT2907A
PN2907A
-10mA)
UMT2222A/SST2222A/MMST2222A/
RXT2222A/PN2222A.
SST2907A
MMST2907A
PN2907A
T106
rxt2907
TO-126F
AGt marking code
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pn2222a
Abstract: PN2222 pnp PN2222A le PN2222
Text: II N AMER PHILIPS/DISCRETE bTE D • bbSB'm DDSflOMb 244 ■ APX PN2222 PN2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope prim arily intended fo r linear and switching applications. P-N-P complement is PN2907/2907A.
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PN2222
PN2222A
PN2907/2907A.
MBB012
pn2222a
PN2222 pnp
PN2222A le
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2222a
Abstract: 5ns turnon time npn transistors 2907 GES MPS2222A PN2222A 2221A 22a ic GES2221A GES2906 MPS2906
Text: E SOLI» STATE DI dF 3875081 G E SOLID STATE | 3Û75DÛ1 DDlT^bM □ 01E 17964 D Signal Transistors GES2906, 6A, 7, 7A, MPS2906, 6A, 7, 7A, GES2221A, 22A, MPS2222A, PN2222A Silicon Transistors Features: • Low leakage currents ■ High speed switching ■ Epoxy encapsulation with proved reliablity - excellent characteristic stability under
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GES2906,
MPS2906,
GES2221A,
MPS2222A,
PN2222A
PN2222A
GES2906
MPS2906
2222a
5ns turnon time npn transistors
2907 GES
MPS2222A
2221A
22a ic
GES2221A
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Untitled
Abstract: No abstract text available
Text: S E M IC O M Ü U C T O R r f,i 2N4953 T O -9 2 'V & * ' CÊ NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 19. See PN2222A for characteristics.
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2N4953
PN2222A
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p*502
Abstract: No abstract text available
Text: S E M I C O N D U C T O R ¡m MMPQ6502 SOIC-16 Quad NPN & PNP General Purpose Amplifier These com plim entary devices can be used in m edium power amplifiers, drivers and sw itches w ith co lle cto r currents to 500 mA. T hese devices are best used when space is the primary consideration. Sourced from Process 19 & 63. See PN2222A
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PQ6502
MMPQ6502
SOIC-16
PN2222A
PN2907A
p*502
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N2222A
Abstract: st2222A RXT2222A st2222 N2222 MMST2222A PN2222A SST2222A T10B UMT2222A
Text: Transistors i NPN Medium Power Transistor Switching U M T2222A /SS T2222A/M M S T2222A/R XT2222A/P N 2222A •E x te r n a l dimensions (Units : mm) • Features 1 ) B V ceo < 4 0 V (lc = 1 0 m A ) UM T2222A 2 ) Complements the UMT2907A/SST2907A/MMST2907A
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MT2222A/SST2222A/M
ST2222A/RXT2222A/P
N2222A
UMT2907A/SST2907A/MMST2907A
/RXT2907A/PN2907A.
UMT2222A
SST2222A
MMST2222A
RXT2222A
PN2222A
N2222A
st2222A
st2222
N2222
PN2222A
T10B
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KSP2222A
Abstract: No abstract text available
Text: KSP2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vc io =40V • Collector DlMlpatlon: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic Symbol Rating Unit VcBO 75 40 6 600 625 150 -5 5 -1 5 0
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KSP2222A
625mW
KSP2222
-150mA,
500mA,
150mA,
-15mA
KSP2222A
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MMPQ6502
Abstract: PN2222A PN2907A SOIC-16
Text: S S E fv llG O fs lO L J C îT Q R MMPQ6502 SOIC-16 Quad NPN & PNP General Purpose Amplifier These com plim entary devices can be used in medium power amplifiers, drivers and sw itches w ith co lle cto r currents to 500 mA. These devices are best used when
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MMPQ6502
SOIC-16
PN2222A
PN2907A
MMPQ6502
PN2222A
PN2907A
SOIC-16
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2N3904 TO92
Abstract: No abstract text available
Text: IliUIGE HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 _ ' _ 1_ OPERATING/STORAGE TEMPERATURE RANGE -6 5 C to +200°C Peak Reverse voltage VRM (V) 100 100 100 100 50 75 35 100
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1N914
1N914A
1N914B
1N4148
1N4150
1N4151
1N4154
1N4448
1N4454
250mW/500mW
2N3904 TO92
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SST222A
Abstract: MMST2222A PN2222A SST6838 SST6839 T116
Text: Transistors SST6838 NPN General Purpose Transistor SST6838 • E x t e r n a l d im e n s io n s U n its : m m • F e a tu re s 1 ) BVceo minimum is 40V (lc = 1 m A ) 2 ) Complements the SST6839. SST6838 ,1.9±0.2 10.950.95 • P a c k ag e , m a rk in g , and p a c k a g in g s p e c ific a tio n s
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SST6838
SST6839.
10mA/0
VCE-12V
100MHz
UMT222A
SST222A
MMST2222A
PN2222A
SST6838
SST6839
T116
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Untitled
Abstract: No abstract text available
Text: TAIWAN LITON E L E C T R O N I C MTE » • 0035^5 0 0 0 4 0 7 b 5ÖÖ ■ TLIT LEAD MOUNTED TRANSISTORS 'T-v-zi NPN T R A N SIST O R S TO-92 PLASTIC C A SE 625 m W @ TL = 25°C 2mm FRO M C A SE C H A R A C T ER IST IC S @ Ta 25°C Type Number 2N3903 2N3904
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2N3903
2N3904
2N4400
2N4401
PN2221
PN2221A
PN2222
PN2222A
BC327
BC327-16
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PDF
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MPSA08
Abstract: No abstract text available
Text: Lead Mounted Transistors NPN Transistors/TO-92 Type Number VCEO Volts hfE @ ^ ce/Ic V/mA Cqb @ Vcb max pF V Pin Diagram See Page 45 V/mA 4.0 5 10 — 20/10 — — 10 10 Fig. 1 Fig. 3 Fig. 1 20/20 20/10 10/20 8.0 10 5 5 Fig. 1 Fig. 1 Fig. 1 50/5 300 — 5/1
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Transistors/TO-92
2N4124
2N5172
2N5088
PN2222A
2N3904
2N4401
MPSA05/ITTA05
PSA08/ITTA06
2N5551
MPSA08
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fairchild 2N2222A
Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Text: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min
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QDE75D4
2N718A
2N1613
fairchild 2N2222A
2n2222a fairchild
2N2222 curve
2N2219 Fairchild
2N2219A FAIRCHILD SEMICONDUCTOR
2N1613 fairchild
2222A fairchild
tr 2n2222
T145
2N2222-PN2222
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Untitled
Abstract: No abstract text available
Text: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403
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UMT4401
SST4401
MMST4401
/2N4401
/SST4401
/MMST4401
UMT4403/SST4403/MMST4403/PN4403
T4401
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