PN918
Abstract: transistor marking T93 MMST918 T146
Text: MMST918 / PN918 Transistors NPN High Frequency Transistor MMST918 / PN918 zExternal dimensions Unit : mm zFeatures 1) High current gain-bandwidth product fT=600MHz 2.9±0.2 MMST918 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 MMST918 PN918 SMT3 RVX TO-92 −
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MMST918
PN918
600MHz
MMST918
SC-59
PN918
transistor marking T93
T146
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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y 331 Transistor
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
y 331 Transistor
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Untitled
Abstract: No abstract text available
Text: PN918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.
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PN918
PN918
100MHz
500MHz
200MHz
60kHz
11-September
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Untitled
Abstract: No abstract text available
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
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CBVK741B019
Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
CBVK741B019
F63TNR
MMBT918
PN2222N
RF 107
transistor tc 144
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mmbt918
Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT918
PN918
OT-23
mmbt918
Intermediate frequency Semiconductor RF
CBVK741B019
F63TNR
PN2222N
npn transistor wc
14inch
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2N3663
Abstract: CBVK741B019 F63TNR PN2222N PN918
Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*
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2N3663
PN918
2N3663
CBVK741B019
F63TNR
PN2222N
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2N5770
Abstract: PN918
Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol
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2N5770
PN918
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2N3663
Abstract: PN918
Text: 2N3663 E TO-92 CB NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol
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2N3663
PN918
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Untitled
Abstract: No abstract text available
Text: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*
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2N3663
PN918
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2N5770
Abstract: No abstract text available
Text: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol
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2N5770
PN918
2N5770
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PN3563
Abstract: CBVK741B019 F63TNR PN2222N PN918
Text: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*
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PN3563
PN918
PN3563
CBVK741B019
F63TNR
PN2222N
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PN3563
Abstract: PN2222N CBVK741B019 F63TNR PN918
Text: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*
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PN3563
PN918
PN3563
PN2222N
CBVK741B019
F63TNR
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MMBT918
Abstract: No abstract text available
Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
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MMBT918
OT-23
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MMBT918
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PN918
Abstract: 2n918 transistor SOT23 2N918 2n918 transistor PN918 transistor 2N918 National
Text: 2N918/PN918/MMBT918 National ISemiconductor PN918 2N918 MMBT918 7KXA hhJJ m /M U Cg TO-7 2 T0 72 TO “236 TO-9 2 SOT-23 T L /G /1 0 1 0 0 -5 C T L /G /1 0 1 0 0 -1 2 T L /G /1 0 1 0 0 -1 NPN RF Transistor Electrical Characteristics t a = 25°c unless otherwise noted
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2N918/PN918/MMBT918
2N918
PN918
MMBT918
OT-23)
2N918/PN918/MMBT9I8
PN918
2n918 transistor SOT23
2n918 transistor
PN918 transistor
2N918 National
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2N3663
Abstract: NPN RF Amplifier PN918
Text: SEMICONDUCTOR ¡m 2N3663 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Rstinys
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2N3663
PN918
2N3663
NPN RF Amplifier
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R 2N3663 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS
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2N3663
PN918
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R 2N5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS
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2N5770
PN918
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TIS92
Abstract: TIS90 TIS97 MA3243C PN7055 PN918 PN930 TIS86 TIS87 TIS98
Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) Maximum Ratings Type No. ^CBO PN7055 (V) Min 220 ^CEO ^ESO Pd W M Min Min @Tc=25"c 220 7 M 0.625 'c (A) ta o m ^CB 0.1 ^CE Min 150 PN918 30 15 3 0.625
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PN7055
PN918
PN930
TIS86
O-92-2
TIS87
TIS92
TIS90
TIS97
MA3243C
TIS98
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Untitled
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
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MMBT918
PN918
OT-23
400il,
PN918
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2N5770
Abstract: No abstract text available
Text: S E M IC O N D U C T O R rivi 2N5770 NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RâtinÇjS
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2N5770
PN918
ilit200
2N5770
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NPN RF Amplifier
Abstract: MMBT918 PN918
Text: B E M ir r N r j ç t t MMBT918 PN918 SOT-23 V B M a rk : 3 B NPN RF Transistor T his device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*
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PN918
MMBT91Ã
OT-23
NPN RF Amplifier
MMBT918
PN918
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PN918 transistor
Abstract: No abstract text available
Text: S E M IC O N D U Q T O H PN918 MMBT918 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. Absolute Maximum RâtinÇjS Symbol
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PN918
MMBT918
PN918
PN918 transistor
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