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    Panasonic Electronic Components PNA1401L

    SENSOR PHOTO 800NM TOP TO18-2
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    Panasonic Electronic Components PNA1401LF

    SENSOR PHOTO 800NM TOP TO18-2
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    PNA1401L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PNA1401L Panasonic Silicon NPN Phototransistor Original PDF
    PNA1401LF Panasonic Silicon NPN Phototransistors Original PDF
    PNA1401LF Panasonic Original PDF
    PNA-1401LF Panasonic Silicon NPN Phototransistors Original PDF

    PNA1401L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original     		2002/95/EC) PNA1401L PN101) PDF

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNA1401L Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA typ.


    Original     		PNA1401L PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs


    Original     		2002/95/EC) PNA1401L PN101) PDF

    PNA1401L

    Abstract: PN101
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		2002/95/EC) PNA1401L PN101) PNA1401L PN101 PDF

    circuit LX-700

    Abstract: PNA1401LF PNZ102F
    Text: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA typ.


    Original     		PNA1401LF, PNZ102F PNA1401LF PNZ102F) 2856K circuit LX-700 PNA1401LF PNZ102F PDF

    PN101

    Abstract: No abstract text available
    Text: Phototransistors PNA1401L PN101 Silicon planar type Unit: mm φ4.6±0.15 Glass lens 6.3±0.3 For optical control systems • Features 12.7 min. • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current: ICEO = 5 nA (typ.)


    Original     		PNA1401L PN101) PN101 PDF

    PN101

    Abstract: PNA1401L
    Text: Phototransistors PNA1401L PN101 Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features 12.7 min. High sensitivity Wide spectral sensitivity, suited for detecting GaAs LED’s Low dark current : ICEO = 5 nA (typ.)


    Original     		PNA1401L PN101) PN101 PNA1401L PDF

    PNA1401L

    Abstract: PN101
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1401L (PN101) Silicon planar type For optical control systems • Features  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs


    Original     		2002/95/EC) PNA1401L PN101) PNA1401L PN101 PDF

    PNA1401LF

    Abstract: PNZ102F
    Text: Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors Unit : mm PNA1401LF ø4.6±0.15 M Di ain sc te on na tin nc ue e/ d 4.5±0.2 For optical control systems Features 12.7 min. ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l


    Original     		PNA1401LF, PNZ102F PNA1401LF PNA1401LF PNZ102F PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent PDF

    TC4009BP

    Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
    Text: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		050106CH1 TLP1025 TLP1029 TLP1033A TLP1034 TLP1201A TLP1201A TLP1204 TC4009BP DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    PHOTO TRANSISTOR 940nm to-18

    Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
    Text: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,


    Original     		CND0204ACT-ND CND0215ACT-ND CND0208ACT-ND CND0214ACT-ND CND0209ACT-ND CND0216ACT-ND CND0204ATR-ND CND0215ATR-ND CND0208ATR-ND CND0214ATR-ND PHOTO TRANSISTOR 940nm to-18 cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND PDF

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


    Original     		MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013 PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 PDF

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


    Original     		PNA3W01L PN307) PNZ313 PN313) PNZ300F PN300F) PNZ313B PN313B) PNZ323 PN323) PNZ335 PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F PDF