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    PNP 1.5 AMPS POWER TRANSISTOR Search Results

    PNP 1.5 AMPS POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP 1.5 AMPS POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR AH-16

    Abstract: AH-16 transistor TRANSISTOR AH-10 ah-16 sot-223 body marking D K Q F AH MARKING SOT223 Transistor AH10 ah16 AH-16 npn BCP53-10T1
    Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps


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    BCP53 OT223 BCP56 BCP53T1 BCP53-10T1 AH-10 BCP53-16T1 AH-16 BCP53T1/D TRANSISTOR AH-16 AH-16 transistor TRANSISTOR AH-10 ah-16 sot-223 body marking D K Q F AH MARKING SOT223 Transistor AH10 ah16 AH-16 npn BCP53-10T1 PDF

    TRANSISTOR AH-16

    Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
    Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps


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    BCP53 OT223 BCP56 BCP53T1 BCP53-10T1 AH-10 BCP53-16T1 AH-16 TRANSISTOR AH-16 AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10 PDF

    TRANSISTOR AH-16

    Abstract: BCP53 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1
    Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps


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    BCP53 OT223 BCP56 BCP53T1 BCP53-10T1 AH-10 BCP53-16T1 AH-16 TRANSISTOR AH-16 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1 PDF

    TRANSISTOR AH-16

    Abstract: bcp53 SOT-223 BCP53-16T1 sot 223 marking code AH BCP53 AH-16 transistor bcp53 transistor datasheet TRANSISTOR AH-10 BCP53-10T1 BCP53-10T1G
    Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps


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    BCP53 OT223 BCP56 BCP53T1 BCP53-10T1 AH-10 BCP53-16T1 AH-16 BCP53T1/D TRANSISTOR AH-16 bcp53 SOT-223 BCP53-16T1 sot 223 marking code AH AH-16 transistor bcp53 transistor datasheet TRANSISTOR AH-10 BCP53-10T1 BCP53-10T1G PDF

    2N1202

    Abstract: 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A
    Text: germanium power transistors 143 PNP ALLOY TRANSISTORS 3.5-5 Amp NORMALIZED CURRENT GAIN 200 - ,- . . 175 .!. ~ w ~ 150 ~ z. ;( 125 C) ~ Z ~ 100 GI: ~ - VCEo-2V ~ u 75 50 o -Q5 -1.0 -1.5 -. -3.0 -2.5 -2.0 COLLECTOR CURRENT, IC (AMPS)


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    MIL-S-19500/3SB MIL-S-19500/3SB 8-32NC-2A 2N1202 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSUE 3 – JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line


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    ZTX958 100ms PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A PDF

    MJL3281A

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJL3281A MJL1302A MJL3281A MJL1302A PDF

    MJW21196

    Abstract: No abstract text available
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21195 MJW21196 MJW21195 MJW21196 PDF

    MJW2119x

    Abstract: No abstract text available
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21193 MJW21194 MJW21193 MJW21194 MJW2119x PDF

    MJW-1302A

    Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D MJW-1302A NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn PDF

    NJW1302G

    Abstract: njw3281 NJW3281G
    Text: NJW3281G NPN NJW1302G (PNP) Preferred Devices Product Preview Complementary NPN-PNP Silicon Power Bipolar Transistors http://onsemi.com The NJW3281G and NJW1302G are PowerBase t power transistors for high power audio, disk head positioners and other linear


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    NJW3281G NJW1302G NJW3281G NJW1302G NJW3281/D njw3281 PDF

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


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    2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A MJW3281A/D PDF

    MJW1302A

    Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A r14525 MJW3281A/D NPN 200 VOLTS 20 Amps POWER TRANSISTOR PDF

    MJW21196

    Abstract: MJW21195 npn 10000 JAPAN transistor
    Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21195 MJW21196 MJW21195 MJW21196 r14525 MJW21195/D npn 10000 JAPAN transistor PDF

    MJW1302A

    Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247
    Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D MJW1302AG MJW3281AG complementary npn-pnp power transistors TO-247 PDF

    complementary npn-pnp power transistors

    Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG
    Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency


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    MJW3281A MJW1302A MJW3281A MJW1302A O-247 MJW3281A/D complementary npn-pnp power transistors MJW1302AG MJW3281AG PDF

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 PDF

    MJW21194

    Abstract: MJW21193
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


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    MJW21193 MJW21194 MJW21193 MJW21194 r14525 MJW21193/D PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency


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    MJL3281A MJL1302A MJL3281A MJL1302A MJL3281A/D PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: No abstract text available
    Text: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device


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    MJ21195 MJ21196 MJ21195 MJ21196 NPN 200 VOLTS 20 Amps POWER TRANSISTOR PDF