TRANSISTOR AH-16
Abstract: AH-16 transistor TRANSISTOR AH-10 ah-16 sot-223 body marking D K Q F AH MARKING SOT223 Transistor AH10 ah16 AH-16 npn BCP53-10T1
Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps
|
Original
|
BCP53
OT223
BCP56
BCP53T1
BCP53-10T1
AH-10
BCP53-16T1
AH-16
BCP53T1/D
TRANSISTOR AH-16
AH-16 transistor
TRANSISTOR AH-10
ah-16
sot-223 body marking D K Q F
AH MARKING SOT223
Transistor AH10
ah16
AH-16 npn
BCP53-10T1
|
PDF
|
TRANSISTOR AH-16
Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps
|
Original
|
BCP53
OT223
BCP56
BCP53T1
BCP53-10T1
AH-10
BCP53-16T1
AH-16
TRANSISTOR AH-16
AH-16 transistor
TRANSISTOR AH-10
AH-16 npn
AH MARKING SOT223
ah-16
sot 223 marking code AH
BCP53-16T1G
BCP53-10T1G
Transistor AH10
|
PDF
|
TRANSISTOR AH-16
Abstract: BCP53 AH MARKING SOT223 ah-16 TRANSISTOR BCP53 BCP53T1G AH-16 npn BCP53-10T1 BCP53-10T1G BCP53-16T1
Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps
|
Original
|
BCP53
OT223
BCP56
BCP53T1
BCP53-10T1
AH-10
BCP53-16T1
AH-16
TRANSISTOR AH-16
AH MARKING SOT223
ah-16
TRANSISTOR BCP53
BCP53T1G
AH-16 npn
BCP53-10T1
BCP53-10T1G
BCP53-16T1
|
PDF
|
TRANSISTOR AH-16
Abstract: bcp53 SOT-223 BCP53-16T1 sot 223 marking code AH BCP53 AH-16 transistor bcp53 transistor datasheet TRANSISTOR AH-10 BCP53-10T1 BCP53-10T1G
Text: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps
|
Original
|
BCP53
OT223
BCP56
BCP53T1
BCP53-10T1
AH-10
BCP53-16T1
AH-16
BCP53T1/D
TRANSISTOR AH-16
bcp53 SOT-223
BCP53-16T1
sot 223 marking code AH
AH-16 transistor
bcp53 transistor datasheet
TRANSISTOR AH-10
BCP53-10T1
BCP53-10T1G
|
PDF
|
2N1202
Abstract: 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A
Text: germanium power transistors 143 PNP ALLOY TRANSISTORS 3.5-5 Amp NORMALIZED CURRENT GAIN 200 - ,- . . 175 .!. ~ w ~ 150 ~ z. ;( 125 C) ~ Z ~ 100 GI: ~ - VCEo-2V ~ u 75 50 o -Q5 -1.0 -1.5 -. -3.0 -2.5 -2.0 COLLECTOR CURRENT, IC (AMPS)
|
Original
|
MIL-S-19500/3SB
MIL-S-19500/3SB
8-32NC-2A
2N1202
539A
5392n
2n1203
2N1501
SO45
2N2266
5402N
Germanium power
2N539A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX958 ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available C B E E-Line
|
Original
|
ZTX958
100ms
|
PDF
|
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: NPN 1.5 AMPS POWER TRANSISTOR MJW-1302A
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
NPN 1.5 AMPS POWER TRANSISTOR
MJW-1302A
|
PDF
|
MJL3281A
Abstract: No abstract text available
Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
|
Original
|
MJL3281A
MJL1302A
MJL3281A
MJL1302A
|
PDF
|
MJW21196
Abstract: No abstract text available
Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
|
Original
|
MJW21195
MJW21196
MJW21195
MJW21196
|
PDF
|
MJW2119x
Abstract: No abstract text available
Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
|
Original
|
MJW21193
MJW21194
MJW21193
MJW21194
MJW2119x
|
PDF
|
MJW-1302A
Abstract: NPN 200 VOLTS 20 Amps POWER TRANSISTOR 10000 npn MJW1302A MJW3281A
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
r14525
MJW3281A/D
MJW-1302A
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
10000 npn
|
PDF
|
NJW1302G
Abstract: njw3281 NJW3281G
Text: NJW3281G NPN NJW1302G (PNP) Preferred Devices Product Preview Complementary NPN-PNP Silicon Power Bipolar Transistors http://onsemi.com The NJW3281G and NJW1302G are PowerBase t power transistors for high power audio, disk head positioners and other linear
|
Original
|
NJW3281G
NJW1302G
NJW3281G
NJW1302G
NJW3281/D
njw3281
|
PDF
|
NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *
|
Original
|
2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
MJW3281A/D
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
MJW3281A/D
|
PDF
|
MJW1302A
Abstract: MJW3281A NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
r14525
MJW3281A/D
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
|
PDF
|
MJW21196
Abstract: MJW21195 npn 10000 JAPAN transistor
Text: MJW21195 PNP MJW21196 (NPN) Preferred Devices Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
|
Original
|
MJW21195
MJW21196
MJW21195
MJW21196
r14525
MJW21195/D
npn 10000
JAPAN transistor
|
PDF
|
MJW1302A
Abstract: MJW1302AG MJW3281A MJW3281AG complementary npn-pnp power transistors TO-247
Text: MJW3281A NPN MJW1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
O-247
MJW3281A/D
MJW1302AG
MJW3281AG
complementary npn-pnp power transistors
TO-247
|
PDF
|
complementary npn-pnp power transistors
Abstract: MJW1302A MJW1302AG MJW3281A MJW3281AG
Text: MJW3281A NPN MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency
|
Original
|
MJW3281A
MJW1302A
MJW3281A
MJW1302A
O-247
MJW3281A/D
complementary npn-pnp power transistors
MJW1302AG
MJW3281AG
|
PDF
|
2N3773 NPN Audio Power AMP Transistor
Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25
|
Original
|
OT-223
O-225AA
O-126)
O-220AB
O-220
O-218
O-247
O-264
O-204AA
O-204AE
2N3773 NPN Audio Power AMP Transistor
2N5192 BD441
mje15034
mj150* darlington
transistor MJ15025
transistor Mj21194
TIP2955 application note
MJ31193
mjl4281
MJE18006
|
PDF
|
MJW21194
Abstract: MJW21193
Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com
|
Original
|
MJW21193
MJW21194
MJW21193
MJW21194
r14525
MJW21193/D
|
PDF
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MJL3281A NPN MJL1302A (PNP) Preferred Devices Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL3281A and MJL1302A are PowerBaset power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency
|
Original
|
MJL3281A
MJL1302A
MJL3281A
MJL1302A
MJL3281A/D
|
PDF
|
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: No abstract text available
Text: ON Semiconductort PNP MJ21195 * NPN MJ21196 * Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. *ON Semiconductor Preferred Device
|
Original
|
MJ21195
MJ21196
MJ21195
MJ21196
NPN 200 VOLTS 20 Amps POWER TRANSISTOR
|
PDF
|