Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP A124 Search Results

    PNP A124 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP A124 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor PNP A124

    Abstract: A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001
    Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. STA124M Marking Package Code A124


    Original     		STA124M STC128M O-92M KST-I005-000 -100mA -500mA, -50mA transistor PNP A124 A124 transistor transistor PNP A124 EQUIVALENT a124 pnp transistor a124 a124* transistor PNP A124 STA124M a124 IC 4001 PDF

    transistor PNP A124

    Abstract: A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M
    Text: STA124M Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with STC128M Ordering Information Type NO. Marking STA124M Package Code A124


    Original     		STA124M STC128M O-92M KST-I005-001 transistor PNP A124 A124 transistor a124* transistor a124 pnp transistor a124 STA124M PNP A124 A124 STC128M PDF

    TRANSISTOR S1d

    Abstract: Q62702-A1243 SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package


    Original     		VPW05980 Q62702-A1243 SCT-595 Jun-18-1997 EHP00842 EHP00843 TRANSISTOR S1d Q62702-A1243 SCT-595 PDF

    A1244

    Abstract: NPN S2D Q62702-A1244 SCT-595
    Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package


    Original     		VPW05980 Q62702-A1244 SCT-595 Mar-13-1998 EHP00881 EHP00882 A1244 NPN S2D Q62702-A1244 SCT-595 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SA1241 2SC3076 PDF

    A1244

    Abstract: Transistor a1244 a124* transistor 2sa1244 Equivalent 2SC3074 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2SA1244 2SC3074 15oducts A1244 Transistor a1244 a124* transistor 2sa1244 Equivalent 2SC3074 2SC3074 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2SA1244 2SC3074 PDF

    a1241 semiconductor

    Abstract: transistor a1241 a1241
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SA1241 2SC3076 a1241 semiconductor transistor a1241 a1241 PDF

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		2SA1244 2SC3074 Transistor a1244 a1244 2SA1244 2SC3074 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SA1241 2SC3076 PDF

    transistor a1241

    Abstract: transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit：mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SA1241 2SC3076 transistor a1241 transistor a1241 datasheet a1241 semiconductor a1241 transistor 2sa1241 2SA1241 2SC3076 PDF

    transistor a1241

    Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SA1241 2SC3076 transistor a1241 a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 PDF

    a1244

    Abstract: Transistor a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2SA1244 2SC3074 a1244 Transistor a1244 2SA1244 2SC3074 PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41 PDF

    transistor a1241

    Abstract: a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original     		2SA1241 2SC3076 transistor a1241 a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original     		2SA1241 2SC3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 µs (typ.) •


    Original     		2SA1244 2SC3074 PDF

    Transistor a1244

    Abstract: a1244 2SA1244 2SC3074
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		2SA1244 2SC3074 Transistor a1244 a1244 2SA1244 2SC3074 PDF

    Transistor a1244

    Abstract: No abstract text available
    Text: 2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1244 High Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 s (typ.) •


    Original     		2SA1244 2SC3074 Transistor a1244 PDF

    TRANSISTOR S2d

    Abstract: NPN S2D
    Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN T“* II Q62702-A1244 LU s2D CO SMBTA 92M o Pin Configuration II CM Ordering Code II Marking


    OCR Scan     		Q62702-A1244 SCT-595 300ns; TRANSISTOR S2d NPN S2D PDF

    TRANSISTOR S1d

    Abstract: AX 1101
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


    OCR Scan     		Q62702-A1243 SCT-595 EHP00844 TRANSISTOR S1d AX 1101 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92M PNP Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42M NPN II LD CO Q62702-A1244 II s2D o SMBTA 92M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		Q62702-A1244 SCT-595 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP II LD CO Q62702-A1243 II s1 D o SMBTA 42M Pin Configuration CM Ordering Code II Marking 0Û


    OCR Scan     		Q62702-A1243 SCT-595 PDF