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    PNP BC559 TRANSISTOR Search Results

    PNP BC559 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP BC559 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR bc549

    Abstract: BC549 BC559 BC559C BP317 transistor BC559
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor Product specification Supersedes data of 1997 Jun 03 1999 May 28 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING


    Original     		PDF M3D186 BC559 BC549. MAM281 115002/04/pp8 TRANSISTOR bc549 BC549 BC559 BC559C BP317 transistor BC559

    BC549 input

    Abstract: BC557C
    Text: BC556 . BC559 BC556 . BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2011-08-19 Power dissipation – Verlustleistung 18 9 16 C BE 2 x 2.54 Dimensions - Maße [mm] 500 mW


    Original     		PDF BC556 BC559 BC559 UL94V-0 BC556 BC549 input BC557C

    BC559C

    Abstract: BC549 BC559 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor Product specification Supersedes data of 1999 May 28 2004 Nov 05 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING


    Original     		PDF M3D186 BC559 BC549. MAM281 SCA76 R75/05/pp7 BC559C BC549 BC559 SC-43A

    BC560 MOTOROLA

    Abstract: BC560C BC559B BC559 BC560
    Text: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC559 BC560 Unit Collector – Emitter Voltage VCEO –30 –45 Vdc Collector – Base Voltage


    Original     		PDF BC559/D BC559, BC560C BC559 BC560 226AA BC559/D* BC560 MOTOROLA BC560C BC559B BC559 BC560

    Untitled

    Abstract: No abstract text available
    Text: BC556 . BC559 BC556 . BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case


    Original     		PDF BC556 BC559 UL94V-0 BC557 BC558/559 BC546 BC549

    bc559c

    Abstract: MAM281
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC559 PNP general purpose transistor Product data sheet Supersedes data of 1999 May 28 2004 Nov 05 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D186 BC559 BC549. BC559 MAM281 BC559C SC-43A R75/05/pp7 771-BC559C-T/R MAM281

    BC547 CBE

    Abstract: BC548 CBE bc549 equivalent BC558 bc558c datasheet 10D3 BC546 BC549 BC556 BC557
    Text: BC556 . BC559 BC556 . BC559 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-05-31 Power dissipation – Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 500 mW Plastic case


    Original     		PDF BC556 BC559 UL94V-0 BC557 BC558/559 BC546 BC549 BC547 CBE BC548 CBE bc549 equivalent BC558 bc558c datasheet 10D3 BC546 BC549 BC556 BC557

    transistor BC559

    Abstract: BC549 DATASHEET BC559 BC559C pnp bc559 transistor BC549 SC-43A transistor BC549 hfe
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC559 PNP general purpose transistor Product data sheet Supersedes data of 1999 May 28 2004 Nov 05 NXP Semiconductors Product data sheet PNP general purpose transistor BC559 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D186 BC559 BC549. MAM281 BC559C R75/05/pp7 transistor BC559 BC549 DATASHEET BC559 BC559C pnp bc559 transistor BC549 SC-43A transistor BC549 hfe

    bc559

    Abstract: BC559B BC560
    Text: BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector −Emitter Voltage VCEO −30 −45 Vdc Collector −Base Voltage VCBO −30 −50 Vdc Emitter −Base Voltage VEBO −5.0 Vdc Collector Current — Continuous


    Original     		PDF BC559 BC560 O-226AA) BC559/D bc559 BC559B BC560

    BC560

    Abstract: bc559 TRANSISTOR bc560 transistor BC559
    Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B FEATURE C A ・For Complementary with NPN Type BC549/550. N E K G MAXIMUM RATING Ta=25℃ SYMBOL RATING UNIT -30 BC559 VCBO Collector-Base Voltage V BC560 -50


    Original     		PDF BC549/550. BC559/560 BC559 BC560 TRANSISTOR bc560 transistor BC559

    BC560C

    Abstract: BC559 BC559B BC560
    Text: Low Noise Transistors BC559, B, C BC560C PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector–Emitter Voltage VCEO –30 –45 Vdc Collector–Base Voltage VCBO –30 –50 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous


    Original     		PDF BC559, BC560C BC559 BC560 r14525 BC559/D BC560C BC559 BC559B BC560

    BC560

    Abstract: BC559 pnp bc559 transistor TRANSISTOR bc560 transistor bc549
    Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE B C A ᴌFor Complementary with NPN Type BC549/550. N MAXIMUM RATING Ta=25ᴱ -30 VCBO BC560 BC559 Collector-Emitter Voltage -50 -30 VCEO -45 UNIT V H V


    Original     		PDF BC559/560 BC549/550. BC559 BC560 -100mA, -10mA, 100MHz BC560 BC559 pnp bc559 transistor TRANSISTOR bc560 transistor bc549

    BC558B

    Abstract: bc560
    Text: BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • • • • Switching and Amplifier High-Voltage: BC556, VCEO = -65 V Low-Noise: BC559, BC560 Complement to BC546, BC547, BC548, BC549, and BC550 1 TO-92 1. Collector 2. Base 3. Emitter


    Original     		PDF BC556 BC557 BC558 BC559 BC560 BC556, BC559, BC546, BC547, BC558B bc560

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE 1999. 11. 30 Revision No : 2 1/1


    Original     		PDF BC559/560

    BC560 philips

    Abstract: B559C BC560 BC560B BC560C TRANSISTOR BC560C philips bc560c BC559A b559 TRANSISTOR bc560
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559; BC560 PNP general purpose transistors Product specification Supersedes data of 1997 Mar 14 File under Discrete Semiconductors, SC04 1997 Jun 03 Philips Semiconductors Product specification PNP general purpose transistors


    Original     		PDF M3D186 BC559; BC560 BC549 BC550. MAM281 SCA54 117047/00/03/pp8 BC560 philips B559C BC560 BC560B BC560C TRANSISTOR BC560C philips bc560c BC559A b559 TRANSISTOR bc560

    BC557

    Abstract: BC559 CBC556 bc546.bc549
    Text: BC556 thru BC559 Small Signal Transistors PNP TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) max. ∅ 0.022 (0.55) Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • These transistors are subdivided into three groups


    Original     		PDF BC556 BC559 O-226AA BC557 BC558 BC559 BC546. BC549 BC556, CBC556 bc546.bc549

    BC559

    Abstract: pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 BC557 hie hre hfe BC556 Amplifier with transistor bc549 BC549 input BC557 BC549 NPN transistor download datasheet pin configuration npn transistor BC557
    Text: BC556 THRU BC559 Small Signal Transistors PNP TO-92 .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ ♦ max. ∅ .022 (0.55) ♦ .098 (2.5) FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. These transistors are subdivided into


    Original     		PDF BC556 BC559 BC557 BC558 BC559 BC546 BC549 BC556, BC557, pin configuration NPN transistor BC558 pin configuration pnp transistor BC558 BC557 hie hre hfe Amplifier with transistor bc549 BC549 input BC549 NPN transistor download datasheet pin configuration npn transistor BC557

    BC549

    Abstract: bc550 Amplifier with transistor BC549 transistor BC550 bc549 noise figure transistor BC549 hfe transistor BC549 bc550 noise figure BC549 NPN transistor B200-450
    Text: SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE ・For Complementary with PNP Type BC559/560. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT 30 BC549 VCBO Collector-Base Voltage V


    Original     		PDF BC559/560. BC549/550 BC549 BC550 Amplifier with transistor BC549 transistor BC550 bc549 noise figure transistor BC549 hfe transistor BC549 bc550 noise figure BC549 NPN transistor B200-450

    TRANSISTOR bc560

    Abstract: BC560 C420 BC559
    Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage BC560 Emitter-Base Voltage


    OCR Scan     		PDF BC559/560 BC559 BC560 -10J/A, -10juA, -100mA, TRANSISTOR bc560 BC560 C420

    BC559

    Abstract: TRANSISTOR bc560 BC560 bc560 c
    Text: SEMICONDUCTOR TECHNICAL DATA BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. FEATURE • For Complementary With NPN Type BC549/550. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC BC559 Collector-Base Voltage BC560 C ollector-Em itter BC559 Voltage


    OCR Scan     		PDF BC559/560 BC549/550. BC559 BC560 -10JUA, -100mA, TRANSISTOR bc560 BC560 bc560 c

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC559/D SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit Collector-Em itter Voltage VCEO -3 0 -4 5 Vdc Collector-Base Voltage


    OCR Scan     		PDF BC559/D BC559, BC560C BC559 BC560

    transistor potencia

    Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
    Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP


    OCR Scan     		PDF fl531BÃ BC546 BC547 BC548 BC549 BC556 BC557 PA6015 PB6015 PA6025 transistor potencia t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494

    BC559

    Abstract: BC557 hie hre hfe cl 100 hie hre hfe
    Text: BC556 THRU BC559 Small Signal Transistors PNP TO-92 FEATURES PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type BC556 is avail­


    OCR Scan     		PDF BC556 BC559 BC557 BC558 BC559 BC546 BC549 BC556. BC557 hie hre hfe cl 100 hie hre hfe

    Untitled

    Abstract: No abstract text available
    Text: FORWARD ETTERNATIONAL ELECTRONICS LID . BC559 SEMICONDUCTOR _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER Package: TO-92 * Complement to BC549 * Low Noise ABSOLUTE MAXIMUM RATINGS at Tan*=2$°C C haracteristic • Symbol R ating


    OCR Scan     		PDF BC559 BC549 -100uA -10mA -100mA -10mA. -10mA 100MHz